ky SGS-THOMSON MICROELECTRONICS TSP 225 --->TSP 1025 SCR FOR OVERVOLTAGE PROTECTION FEATURES HIGH SURGE CURRENT CAPABILITY A 4 - K a HIGH di/dt RATING 6 a HIGH STABILITY AND RELIABILITY K G DESCRIPTION The TSP 225 ---> TSP1025 Family uses high per- formance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for A overvoltage protection in crowbar circuits applica- tion. TO 48 (Metal) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Te = 105 C 25 A (180 conduction angle, single phase circuit) ITrav) Average on-state current Te = 105 C 16 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 733 A (Tj initial = 25C ) tip =10ms 700 l2t It value tp = 10 ms 2450 A2s ITM Non repetitive surge peak on-state current {p = 250 ms 145 A ( Tj initial = 25C ) Rectangular pulse wave form dl/dt Critical rate of rise of on-state current 100 Aus Gate supply : |G = 500 mA diG/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to + 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter TSP Unit 225 525 1025 VDRM Repetitive peak off-state voltage 25 50 100 Vv VRAM Tj = 125C July 1991 1/5 Me 7929237 0059477 685 149TSP 225 ---> TSP 1025 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-h) | Contact (case to heatsink) 0.4 C/W Rth (j-c) DC | Junction to case for DC 1.2 CIW GATE CHARACTERISTICS (maximum values) PG (AV) = 1W Pa@M = 40W (tp = 20 us) IFGM = 4A (p= 20s) VFGM = 16V (p= 20s) VRGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V (DC) AL=33Q Tj=25C | MAX 50 mA Vet Vp\12V (DC) AL=330 Ti=25C | MAX 1.5 VeD Vp=VoRM AL=3.3kQ Tj= 125C | MIN 0.2 tgt VbD=VDRM |G = 200mA Tj=25C TYP 1 ys dig/dt = 1.5A/us IL Iq= 1.2 lat Tj=25C | TYP 50 mA lH IT= 500mA gate open Tj=25C MAX 50 mA VIM ITM= 140A tp= 380us Tj=25C MAX 1.5 v IDRM Vprem Rated Tj=25C MAX 0.01 mA RRM | VARM Rated Tj= 125C 10 dV/dt Linear slope up to Vp=67%VDRM Tj= 125C | MIN 200 Vius gate open Tq Vp=67%VpRM TM= 140A VR=25V | Tj= 125C | TYP 50 ys ditm/dt=30 A/us dVp/dt= 50V/us 2 150TSP 225 ---> TSP 1025 Fig.1 : Maximum average power dissipation versus average on-state current. P (W) 20 + 360 157- if BC pc | = 180 10 1 (= 120 Qs: 90 5 Q= 60 Ql 30 It(av) (A) oO L Oo 5 10 15 20 25 Fig.3 : Average on-state current versus case temperature. ltay) A) Tease(C) 0 25 50 75 100 125 Fig.5 : Relative variation of gate trigger current versus junction temperature. Igt(Ty] InITs] Igth T#25C IA[T}=25 C] 25 2 Igt 15 [I 1 ih ST | | + |__| p~_| +} 0.5 tt t T) (C) 1 L 1 i 0 -40-30-20-10 0 10 20 30 40 50 60 70 BO 90 100110120130 Me 7929237 0059479 458 Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. P (W) Tcase (C) 20 Rth-o c/w {7100 C2 "c/w 4 C/W |1 4105 18 VY sow SM 110 10 +180" | 115 5 | te 120 Tamb ("C) \ 0 4425 0 20 40 60 80 100 120 140 Fig.4 : Thermal transient impedance junction to ambient versus pulse duration. Zth j-c ( C/W) 1.4 12 1 0.8 0.6 0.4 02 t (s) 0 10E-04 10E-03 10E-02 10E-01 10E+00 10E+01 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. Itsu {A} 800 T4411 ToT TT Ty initial 25C | 600 400 7 NI NT 200 Lo Number of cycles 0 } ft tit tii { 1 10 100 1000 3/5 151TSP 225 ---> TSP 1025 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width t < 10 ms, and corresponding value of [2t. Irsm (A). It (A's) Tj initiat = 25C ' | 5000|---------- - --_ -++-- --+- 4+ . 00\- --- ---_+---- + - eee eb Fig.9 : Peak capacitor discharge current versus pulse width. ttm(A) 10000 1000 100 1 10 100 1000 ITM 4/5 152 Fig.8 : On-state characteristics (maximum values). ttn (A) 1000 Tj initial 26C 100 Tj max 10 Vto = 0.8V Rt =0.0059 Vitaly) 2 3 4 5 Fig.10 : Allowable peak capacitor discharge current versus initial junction temparature. ITMITil (%) Tre j=25C] 100 90 80 70 60 50 40 30 20 10 0 0 26 50 756 100 126 160 we 7929237 0059480 17TTSP 225 ---> TSP 1025 PACKAGE MECHANICAL DATA (in millimeters) TO 48 Metal @ 2=0.2 O4t02 NN \S Mm =< Tf lL Oi25 3 | i g H | sl a & : 8 g| | | Pil } 3 _ ' 9/16" over flats 6 sided 4) 3 1 A | Ty M6 1/4 - 2B UNF 16,5 maxs Cooling method : A Marking : type number Weight : 13.5 Polarity . Anade (or A2) to case Stud torque - 3.5 mAN min / 3.8 mAN max 5/5 Me 7929237? 0059481 OOb 153