MICROWAVE POWER GaN HEMT TGI5867-130LHA FEATURES BROAD BAND INTERNALLY MATCHED HEMT HIGH POWER Pout= 51.0dBm at Pin= 43.0dBm HIGH GAIN GL= 12.5dB at Pin= 20.0dBm LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power Pout Drain Current IDS1 Power Added Efficiency add Linear Gain CONDITIONS VDS= 40V IDSset= 0.8A f = 5.85 to 6.75GHz @Pin= 43dBm GL 3rd Order Intermodulation Distortion G IM3 IM3-2 Drain Current IDS2 Channel Temperature Rise *1 Tch Gain flatness ( Ta= 25C ) UNIT MIN. TYP. MAX. dBm 50.0 51.0 A 7.0 9.0 % 38 dB 11.5 12.5 dB 0.8 dBc -25 -30 -27 A 5.0 C 120 140 @Pin= 20dBm Two-Tone Test Po= 44.0dBm, f= 5MHz f= 150MHzIM3-2 (Single Carrier Level) Recommended Gate Resistance(Rg): 10 *1: Tch = (VDS x IDS + Pin(two-tone) - Po(two-tone)) x Rth(c-c), calculated using parameters of IM3 test ELECTRICAL CHARACTERISTICS CHARACTERISTICS SYMBOL ( Ta= 25C ) CONDITIONS Pinch-off Voltage VGSoff VDS= 5V IDS= 10.0A VDS= 5V IDS= 30mA Gate-Source Breakdown Voltage VGSO IGS= -25mA Transconductance Thermal Resistance gm Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S 8.0 V -2.0 -3.0 -5.0 V -10 C/W 0.8 1.0 The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as "TISS") for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product. Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20171114_No1343 Page: 1 / 3 MICROWAVE POWER GaN HEMT TGI5867-130LHA ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS ( Ta= 25C ) SYMBOL UNIT RATING Drain-Source Voltage VDS V 50 Gate-Source Voltage VGS V -10 Drain Current IDS A 6 Total Power Dissipation (Tc= 25C) PT W 200 Channel Temperature Tch C 225 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (7-AA06A) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C or 3 seconds at 350C Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20171114_No1343 Page: 2 /3 MICROWAVE POWER GaN HEMT TGI5867-130LHA RESTRICTIONS ON PRODUCT USE All presented data are typical curves/values and for reference only as design guidance. Devices are not necessarily guaranteed at these curves and values. 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Product is intended for use in communications equipment (including Radar) on the ground. Product is neither Intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aircraft and space equipment, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustion or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. If you are considering using the Product in such situation, please contact us in advance. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TISS for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. Copyright (c) 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20171114_No1343 Page: 3 /3