MICROWAVE POWER GaN HEMT
TGI5867-130LHA
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20171114_No1343 Page: 1 / 3
FEATURES
･
BROAD
BAND
INTERNALLY
MATCHED
HEMT
･HIGH
POWER
Pout= 51.0dBm at Pin= 43.0dBm
･
HIGH
GAIN
GL= 12.5dB at Pin= 20.0dBm
･
LOW
INTERMODULATION
DISTORTION
IM3(Min.)= -25dBc at Pout= 44.0dBm
Single Carrier Level
･
HERMETICALLY
SEALED PACKAGE
RF
PERFORMANCE
SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT
MIN.
TYP.
MAX.
Output Power Pout VDS= 40V
IDSset= 0.8A
f = 5.85 to 6.75GHz
@Pin= 43dBm
dBm 50.0 51.0
Drain Current
IDS1
A
7.0
9.0
Power Added Efficiency η
add
%
38
Linear Gain
GL
@Pin= 20dBm
dB
11.5
12.5
Gain flatness ∆G dB ±0.8
3rd Order Intermodulation
Distortion
IM3
IM3-2 Two-Tone Test
Po= 44.0dBm, ∆f= 5MHz
∆f= 150MHz（IM3-2）
(Single Carrier Level)
dBc -25
-30
-27
Drain Current
IDS2
A
5.0
Channel Temperature Rise *1 ∆Tch °C 120 140
Recommended
Gate
Resistance(Rg): 10
Ω
*1: ∆Tch = (VDS × IDS + Pin(two-tone) – Po(two-tone)) × Rth(c-c), calculated using parameters of IM3 test
ELECTRICAL
CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
UNIT
MIN.
TYP.
MAX.
Transconductance gm
S 8.0
Pinch-off Voltage VGSoff
V -2.0 -3.0 -5.0
Gate-Source Breakdown Voltage VGSO IGS= -25mA V -10
Thermal Resistance Rth(c-c) Channel to Case °C/W
0.8 1.0
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA
INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of
patents or any other intellectual property rights of third parties that m ay result from the use of product. No license to any intellectual
property right is granted by this document. The information contained herein is subject to change without prior notice. It is
advisable to contact TISS before proceeding with design of equipment incorporating t his product.
MICROWAVE POWER GaN HEMT
TGI5867-130LHA
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20171114_No1343 Page: 2 /3
ABSOLUTE
MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage VDS V 50
Gate-Source Voltage VGS V -10
Drain Current
IDS
A
6
Total Power Dissipation (Tc= 25°C) PT W 200
Channel Temperature Tch °C 225
Storage Temperature Tstg °C -65 to +175
PACKAGE
OUTLINE (7-AA06A)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODE L
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C
MICROWAVE POWER GaN HEMT
TGI5867-130LHA
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20171114_No1343 Page: 3 /3
RESTRICTIONS
ON
PRODUCT
USE
･All presented data are typical curves/values and for reference only as design guidance.
･Devices are not necessarily guaranteed at these curves and values.
･TISS, and its subsidiaries and affiliates (collectively ”TISS”), reserve the right to make changes to the information in
this document, and related hardware, software and
systems (collectively “Product”) without notice.
･This document and any information herein may not be reproduced without prior written permission from TISS.
Even with TISS’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
･Though TISS works continually to improve Product’s qua lity and relia bil ity , Produ ct can ma l funct ion or fa il.
Customers are responsible for complying with safety standards and for providing adequate designs and
safeguards for their hardware, software and systems which minimize risk and avoid situations in which a
malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including
data loss or corruption. Before creating and producing designs and using, customers must also refer to and
comply with (a) the latest versions of all relevant TISS information, including without limitation, this document,
the specific atio ns, t he data sheets and application notes for Product and the precautions and conditions set
forth therein and (b) the instructions for the application that Product will be used with or for,
Customers are solely responsible for all aspects of their own product design or applications, including but not
limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b)
evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating
all operating parameters for such designs and applications. TISS ASSUMES NO LIABILITY FOR CUSTOMERS’
PRODUCT DESIGN OR APPLICATIONS.
･Product is intended for use in communications equipment (including Radar) on the ground. Product is neither
Intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property
damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment
used in nuclear facilities, equipment used in the aircraft and space equipment, medical equipment, equipment
used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to
control combustion or explosions, safety devices, elevators and escalators, devices r elated to electric powe r,
and equipment used in finance-related fields. If you are considering using the Product in such si tuat ion, please
contact us in adva nce.
･Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in
part.
･Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable laws or regulations.
･The infor mat ion contai ned her ein is presented only as guidance for Product use. No responsibility is assumed
by TISS for any infringement of patents or any other intellectual property rights of third parties that may result
from the use of Product. No license to any intellectual property right is granted by this document, whether
express or implied, by estoppel or otherwise.