MJE13007A
SILICON NPN S WITCHING TRANSISTOR
■SGS -THO MS ON PRE F ERRE D SALES T YP E
■NPN TRANSISTOR
■HIGH CURRENT CAPABILITY
APPLICATIONS
■SWI TCHING RE G ULAT O R S
■MOTOR CONTROL
DESCRIPTION
The MJE13007A is silicon multiepitaxial mesa
NPN power transistor mounted in Jedec TO-220
plastic package.
They are inteded for use in motor control,
switching regulators etc.
INTERNAL SCHEMATI C DIAG RAM
June 1997
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -1.5V) 850 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 8 A
ICM Collector Peak C urrent 16 A
IBBase Current 4 A
IBM Base Peak Current 8 A
IEEmitter Current 12 A
IEM Emitter Peak Current 24 A
Ptot Total Dissipation at Tc ≤ 25 oC80W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.56 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE = -1.5V) VCE = rated VCEV
VCE = rated VCEV Tc = 100 oC1
5mA
mA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 9 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = 10 mA 400 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 2 A IB = 0.4 A
IC = 5 A IB = 1 A
IC = 8 A IB = 2 A
IC = 5 A IB = 1 A Tc = 100 oC
1
1.5
3
2
V
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 2 A IB = 0.4 A
IC = 5 A IB = 1 A
IC = 5 A IB = 1 A Tc = 100 oC
1.2
1.6
1.5
V
V
V
hFE∗DC Current Gain IC = 2 A VCE = 5 V
IC = 5 A VCE = 5 V 8
640
30
fTTransition Frequency IC = 0.5 A VCE = 10 V f = 1 MHz 4 MHz
CCBO Output Capacitance IE = 0 VCB = 10 V f = 0.1 MHz 110 pF
RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ton Turn-on Time VCC = 125 V IC = 5 A
IB1 = -IB2 = 1 A
tp = 25 µs Duty Cycle < 1%
0.7 µs
tsStorage Time 3 µs
tfFall Time 0.7 µs
INDUCTI V E LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tfFall Time VCC = 125 V IC = 5 A IB1 = 1 A
tp = 25 µs Duty Cycle < 1% 0.3 µs
tfFall Time VCC = 125 V IC = 5 A IB1 = 1 A
tp = 25 µs Duty Cycle < 1%
Tc = 100 oC
0.6 µs
* Pulsed: Pulse durat ion = 300 µs, duty cycl e 2 %
MJE13007A
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
MJE13007A
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
conse quences of use of such information nor for any infringement of patent s or othe r rights of third part ies which may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro electronics . Specifi cations mentioned
in this publicat ion are subject to change without noti ce. This publicat ion sup ersedes and replaces all inf ormation previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support dev ices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserv ed
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerl and - Taiwan - Thailand - United Kingdom - U.S.A
. . .
MJE13007A
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