LITE-ON SEMICONDUCTOR T12M35T-B SERIES TRIACS 12 AMPERES RMS 600 thru 800 VOLTS Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Blocking Voltage to 800 Volts Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 High Immunity to dv/dt -- 400 V/us Min. at 125 High Surge Current Capability -- 100 Amperes Pb Free Package B L M C D A K E PIN 1 2 3 F G I J N TO-220AB DIM. MAX. MIN. 14.22 15.88 A 10.67 B 9.65 3.43 C 2.54 D 6.86 5.84 9.28 E 8.26 6.35 F 14.73 12.70 G H 2.29 2.79 0.51 1.14 I J 0.40 0.67 K 3.53 4.09 3.56 4.83 L M 1.14 1.40 2.92 2.03 N All Dimensions in millimeter PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit VDRM, VRRM 600 800 Volts IT(RMS) 12 Amp ITSM 100 Amps I2t 41 A2s Peak Gate Power (Tc = +80 , Tp 1.0 us) PGM 16 Watt Average Gate Power (Tc = +80 , t=8.3 ms) PG(AV) 0.35 Watt TJ -40 to +125 Tstg -40 to +150 Peak Repetitive Off- State Voltage (1) (TJ= -40 to 110 , Sine Wave, 50 to 60 Hz; Gate Open) T12M35T600B T12M35T800B On-State RMS Current (TC = +70 ) Full Cycle Sine Wave 50 to 60 Hz Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ= +25 ) Preceded and followed by rated current. Circuit Fusing Consideration (t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV. 1, Mar-2007,KTXC24 RATING AND CHARACTERISTIC CURVES T12M35T-B SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds Symbol Value Unit RthJC RthJA 2.2 62.5 /W TL 260 ELECTRICAL CHARACTERISTICS (Tj=25 unless otherwise noted, Electrical apply in both directions) Characteristics Symbol Min Typ Max Unit IDRM IRRM ------- ------- 0.01 2.0 mA Peak On-State Voltage (ITM= 17A Peak @Tp 2.0 ms, Duty Cycle 2%) VTM ---- ---- 1.85 Volts Gate Trigger Current (Continuous dc) (VD = 12Vdc; RL = 100 Ohms) IGT1 IGT2 IGT3 5.0 5.0 5.0 13 13 13 35 35 35 mA VGT1 VGT2 VGT3 0.5 0.5 0.5 0.78 0.70 0.71 1.5 1.5 1.5 Volts Holding Current (VD = 12 V, Initiating Current = 150 mA, Gate Open) IH ---- 20 40 mA Latching Current (VD = 24 V, IG = 35 mA) IL ---------- 20 30 20 50 80 50 mA di/dt(c) 6.5 ---- ---- A/ms Critical Rate of Rise of Commutation Voltage (VD = 67% VDRM, Exponential Waveform, Gate Open, TJ= 125) dv/dt 400 ---- ---- V/us Repetitive Critical Rate of Rise of On-State Current (IPK = 50 A; PW = 40 usec; diG/dt = 0.2 A/usec;f = 60 Hz) di/dt ---- ---- 10 A/us OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM, VRRM; Gate Open) TJ=25 TJ=125 ON CHARACTERISTICS Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc; RL =100 Ohms) DYNAMIC CHARACTERISTICS Critical Rate of Change of Commutation Current (VD = Rated VDRM , ITM = 4.4 A, Commutating dv/dt = 18 V/ms, Gate Unenergized,TJ = 125, f = 250 Hz,No Snubber) RATING AND CHARACTERISTIC CURVES T12M35T-B SERIES Quadrant Definitions All polarities are referenced to MT1 Whith in -phase signal (using standard AC lines) quadrants I and III are used RATING AND CHARACTERISTIC CURVES T12M35T-B SERIES Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current) versus Junction Temperature 1.10 VGT,GATE TRIGGER VOLTAGE (VOLTS) IGT,GATE TRIGGER CURRENT(mA) 100 Q3 Q2 Q1 10 1 -40 -25 -10 5 20 35 50 65 80 95 110 125 Q3 1.00 0.90 Q1 0.80 Q2 0.70 0.60 0.50 0.40 -40 -25 -10 5 20 35 50 65 80 95 110 125 o TJ,JUNCTION TEMPERATURE( C) o TJ,JUNCTION TEMPERATURE( C) Figure 3. Typical Holding Current versus Junction Temperature Figure 4. Typical Latching Current versus Junction Temperature 100 MT2 Positive LATCHING CURRENT(mA) IH,HOLDING CURRENT(mA) 100 10 MT2 Negative 1 -40 -25 -10 5 20 35 50 65 80 95 110 125 Q2 Q1 Q3 10 1 -40 o TJ,JUNCTION TEMPERATURE( C) -25 -10 Figure 5. Typical RMS Current Derating 95 180 80 DC 65 6 8 10 IT(RMS),RMS ON- STATE CURRENT(AMPS) 12 P(AV),AVERAGE POWER DIDDIPATION(WATTS) o TC,CASE TEMPERATURE( C) 110 4 35 50 65 80 95 110 125 Figure 6. On-State Power Dissipation 120 ,90 ,60 ,30 2 20 o 125 0 5 TJ,JUNCTION TEMPERATURE( C) 20 DC 18 180 16 120 14 12 10 8 90 6 60 4 30 2 0 0 2 4 6 8 10 IT(AV),AVERAGEON-STATE CURRENT(AMPS) 12 RATING AND CHARACTERISTIC CURVES T12M35T-B SERIES Figure 8. Typical Thermal Response r(t),TRANSIENT THERMAL RESISTANCE (NORMALIZED) IT,INSTANTANEOUS ON-STATE CURRENT(AMPS) Figure 7. Typical On-State Characteristics 100 Typical@ TJ = 25 10 Maximun @ TJ = 110 1 Maximun @ TJ = 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 0.1 0.01 0.1 1 VT,INSTANTANEOUS ON-STATE VOLTAGE(VOLTS) Specifications mentioned in this publication are subject to change without notice. 10 100 t,TIME(ms) 1000 10000