T12M35T-B SERIES
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
FEATURES
Blocking Voltage to 800 Volts
Uniform Gate Trigger Currents in Three Quadrants, Q1,
Q2, and Q3
High Immunity to dv/dt — 400 V/us Min. at 125
℃
High Surge Current Capability — 100 Amperes
Pb Free Package
Triacs
Sillicon Bidirectional Thyristors
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (1) (
T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
600
800 Volts
On-State RMS Current (
T
C
= +70
℃
) Full Cycle Sine Wave 50 to 60 Hz I
T(RMS)
12 Amp
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz,
T
J
= +25
℃
)
Preceded and followed by rated current. I
TSM
100 Amps
Circuit Fusing Consideration (t = 8.3 ms) I t 41 A s
Peak Gate Power (
T
c
= +80
,
℃
Tp 1.0 us)
≦
P
GM
16 Watt
Average Gate Power (
T
c
= +80
,
℃
t=8.3 ms) P
G(AV)
0.35 Watt
Operating Junction Temperature Range
T
J
-40 to +125
℃
Storage Temperature Range Tstg -40 to +150
℃
22
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
T12M35T600B
T12M35T800B
SEMICONDUCTOR
LITE-ON
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67
9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.67 0.40
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
PIN ASSIGNMENT
A
B
C
K
J
I
G
F
E
D
N
M
L
PIN
13
2
REV. 1, Mar-2007,KTXC24
RATING AND CHARACTERISTIC CURVES
T12M35T-B SERIES
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient
R
thJC
R
thJA
2.2
62.5
℃
/
W
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
T
L
260
℃
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current T
J
=25
℃
(V
D
=Rated V
DRM,
V
RRM;
Gate Open) T
J
=125
℃
I
DRM
I
RRM
----
----
----
----
0.01
2.0 mA
Peak On-State Voltage
(I
TM=
± 17A Peak @Tp 2.0 ms, Duty Cycle 2%)
≦ ≦
V
TM
---- ---- 1.85 Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12Vdc; R
L
= 100 Ohms)
I
GT1
I
GT2
I
GT3
5.0
5.0
5.0
13
13
13
35
35
35
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc; R
L
=100 Ohms)
V
GT1
VGT2
VGT3
0.5
0.5
0.5
0.78
0.70
0.71
1.5
1.5
1.5
Volts
Holding Current
(V
D
= 12 V, Initiating Current = ± 150 mA, Gate Open) I
H
---- 20 40 mA
Latching Current (V
D
= 24 V, I
G
= 35 mA) I
L
----
----
----
20
30
20
50
80
50
mA
Critical Rate of Change of Commutation Current
(V
D
= Rated VDRM , I
TM
= 4.4 A, Commutating dv/dt = 18 V/ms, Gate
Unenergized,T
J
=
125 , f = 250 Hz,No
℃
Snubber)
di/dt(c) 6.5 ---- ---- A/ms
Critical Rate of Rise of Commutation Voltage
(V
D
= 67% VDRM, Exponential Waveform, Gate Open, T
J
=
125
)
℃
dv/dt 400 ---- ---- V/us
Repetitive Critical Rate of Rise of On-State Current
(IPK = 50 A; PW = 40 usec; diG/dt = 0.2 A/usec;f = 60 Hz) di/dt ---- ---- 10 A/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise noted, Electrical apply in both directions)
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Quadrant Definitions
All polarities are referenced to MT1
Whith in -phase signal (using standard AC lines) quadrants I and III are used
RATING AND CHARACTERISTIC CURVES
T12M35T-B SERIES
RATING AND CHARACTERISTIC CURVES
T12M35T-B SERIES
-40 -25 -10 5 20 35 50 65 80 95 110 125
1
10
100
Figure 1. Typical Gate Trigger Current)
versus Junction Temperature
I
GT
,GATE TRIGGER CURRENT(mA)
T
J
,JUNCTION TEMPERATURE(
o
C)
Q3
Q1
Q2
-40 -25 -10 5 20 35 50 65 80 95 110 125
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
V
GT
,GATE TRIGGER VOLTAGE (VOLTS)
T
J
,JUNCTION TEMPERATURE(
o
C)
Q1
Q3
Q2
-40 -25 -10 5 20 35 50 65 80 95 110 125
1
10
100
Figure 3. Typical Holding Current
versus Junction Temperature
T
J
,JUNCTION TEMPERATURE(
o
C)
I
H
,HOLDING CURRENT(mA)
MT2 Positive
MT2 Negative
-40 -25 -10 5 20 35 50 65 80 95 110 125
1
10
100
Figure 4. Typical Latching Current
versus Junction Temperature
LATCHING CURRENT(mA)
T
J
,JUNCTION TEMPERATURE(
o
C)
Q1
Q2
Q3
0 2 4 6 8 10 12
65
80
95
110
125
Figure 5. Typical RMS Current Derating
T
C
,CASE TEMPERATURE(
o
C)
I
T(RMS)
,RMS ON- STATE CURRENT(AMPS)
120° ,90° ,60° ,30°
180°
DC
0 2 4 6 8 10 12
0
2
4
6
8
10
12
14
16
18
20
Figure 6. On-State Power Dissipation
P
(AV)
,AVERAGE POWER DIDDIPATION(WATTS)
I
T(AV)
,AVERAGEON-STATE CURRENT(AMPS)
DC
60°
120°
180°
90°
30°
RATING AND CHARACTERISTIC CURVES
T12M35T-B SERIES
Specifications mentioned in this publication are subject to change without notice.
◎
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
Figure 7. Typical On-State Characteristics
I
T
,INSTANTANEOUS ON-STATE CURRENT(AMPS)
V
T
,INSTANTANEOUS ON-STATE VOLTAGE(VOLTS)
Maximun @ T
J
= 110
℃
Maximun @ T
J
= 25
℃
Typical@ T
J
= 25
℃
0.1 1 10 100 1000 10000
0.01
0.1
1
Figure 8. Typical Thermal Response
r(t),TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
t,TIME(ms)
