Thyristors Datasheet BTB12-600BW3G, BTB12-800BW3G Surface Mount - 800V Pb Description The BTB12 is dAesigned for high performance full-wave AC control applications where high noise immunity and high commutating di/ dt are required. Features Blocking Voltage to 800 V On-State Current Rating of 12 Amperes RMS at 25C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt - 2000 V/s minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt - 4. A/ms minimum at 125C These are Pb-Free Devices Functional Diagram Additional Information MT 2 MT 1 G Resources Accessories Pin Out Samples CASE 221A STYLE 4 1 1 2 (c) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/15/21 Thyristors Datasheet BTB12-600BW3G, BTB12-800BW3G Surface Mount - 800V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value VDRM, VRRM IT (RMS) 600 800 12 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC= 25C) ITSM 120 A Circuit Fusing Consideration (t = 10 ms) 2 It 78 Asec VDSM / VRSM VDSM / VRSM +100 V IGM 4.0 W BTB12-600BW3G Peak Repetitive Off-State Voltage (Note 1) BTB12-800BW3G (Gate Open, Sine Wave 50 to 60 Hz, TJ = -40 to 125C) On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80C) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25C, t = 10 ms) Peak Gate Current (TJ = 125C, t = 20ms) Unit V Peak Gate Power (Pulse Width 1.0 s, TC = 80C) PGM 20 W Average Gate Power (TJ = 125C) PG(AV) 1.0 W Operating Junction Temperature Range TJ -40 to +125 C Storage Temperature Range Tstg -40 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit RJC RJA 2.3 60 C/W TL 260 C Junction-to-Case (AC) Junction-to-Ambient Thermal Resistance Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds Electrical Characteristics - OFF (TJ = 25C unless otherwise noted ; Electricals apply in both directions) Characteristic TJ = 25C TJ = 125C Peak Repetitive Blocking Current (VD = VDRM = VRRM; Gate Open) Symbol Min Typ Max IDRM, IRRM - - 0.005 - - 1.0 Unit mA Electrical Characteristics - ON (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Forward On-State Voltage (Note 2) (ITM = 17 A Peak) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 ) Holding Current (VD = 12 V, Gate Open, Initiating Current = 100 mA) Symbol Min Typ Max Unit VTM - 2.5 2.5 2.5 - - - - 0.5 0.5 0.5 0.2 0.2 0.2 - - - - - - - - - - - - - - 1.55 50 50 50 50 70 90 70 1.7 1.1 1.1 - - - V IGT IH MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Latching Current (VD = 24 V, IG = 60 mA) Gate Trigger Voltage (VD = 12 V, RL = 30 ) Gate Non-Trigger Voltage (TJ = 125C) IL VGT VGD mA mA mA V V 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2 (c) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/15/21 Thyristors Datasheet BTB12-600BW3G, BTB12-800BW3G Surface Mount - 800V Dynamic Characteristics Characteristic Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125C, No Snubber) Critical Rate of Rise of On-State Current (TJ = 125C, f = 120 Hz, IG = 2 x IGT, tr 100 ns) Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125C) Symbol Min Typ Max Unit (dI/dt)c 4.0 - - A/ms dI/dt - - 50 A/s dV/dt 2000 - - V/s Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH +C urrent V TM on stat e I RR M at V RR M Holding Current Quadrant Definitions for a Triac IH Quadrant 3 Main Terminal 2 MT2 POSITIVE (Positive Half Cycle) + +V oltage I DR M at V DR M V TM MT 1 MT 1 RE F RE F ( ) MT 2 ( ) MT 2 I GT Q u a dr a n t III off stat e Q ua dr a nt I (+) I GT GA TE ( ) I GT GA TE IH (+) MT 2 (+) MT 2 Q u a dr a n t II Quadrant 1 Main Terminal 2 + +I GT Q u a dr a n t IV (+) I GT GA TE ( ) I GT GA TE MT 1 MT 1 RE F RE F MT2 NEGA TIVE (Negative Half Cycle) All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used 3 (c) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/15/21 Thyristors Datasheet BTB12-600BW3G, BTB12-800BW3G Surface Mount - 800V Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation Figure 3. On-State Characteristics Figure 4. Thermal Response TYPICAL AT TJ = 25C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 MAXIMUM @ C J =T125 10 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 4 Figure 5. Typical Hold Current Variation IT MAXIMUM @ C J =T25 1 0.1 0 VT 4 (c) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/15/21 Thyristors Datasheet BTB12-600BW3G, BTB12-800BW3G Surface Mount - 800V Figure 6. Typical Gate Trigger Current Variation Figure 7. Typical Gate Trigger Voltage Variation Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform) 5000 VD = 800 Vpk TJ = 125C 4K 3K 2K 1K 0 10 100 1000 10000 R G, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS) Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) LL 200VRMS ADJUST FOR ITM, 60 Hz VAC MEASURE I TRIGGER CHARGE CONTROL TRIGGER CONTROL CHARGE 1N4007 CL + 200V MT2 1N914 51 G MT1 Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information 5 (c) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/15/21 Thyristors Datasheet BTB12-600BW3G, BTB12-800BW3G Surface Mount - 800V Dimensions Part Marking System 4 SEATING PLANE B F 4 Q 12 C T S A U 3 1 H 2 3 BTB12-xBWG YMAXX TO 220AB CASE 221A STYLE 12 K Z x =6 or 8 Y =Year M =Month A =Assembly Site XX =Lot Serial Code G =Pb-Free Package R L V J G D N Dim Inches Millimeters Pin Assignment Min Max Min Max 1 Main Terminal 1 A 0.590 0.620 14.99 15.75 2 Main Terminal 2 B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 No Connection D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 Ordering Information H 0.110 0.130 2.79 3.30 Device Package Shipping J 0.018 0.024 0.46 0.61 BTB12-600BW3G TO-220AB (Pb-Free) 1000 Units / Box K 0.540 0.575 13.72 14.61 BTB12-800BW3G TO-220AB (Pb-Free) 1000 Units / Box L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 2.41 R 0.085 0.095 2.16 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 1. Dimensioning and tolerancing per ansi y14.5m, 1982. 2. Controlling dimension: inch. 3. Dimension z defines a zone where all body and lead irregularities are allowed. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 6 (c) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/15/21