BTB12-800BW3G - LITTELFUSE

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

BTB12-600BW3G, BTB12-800BW3G

Surface Mount – 800V

■Blocking Voltage to 800 V

■On-State Current Rating of 12

Amperes RMS at 25°C

■Uniform Gate Trigger Currents

in Three Quadrants

■High Immunity to dV/dt −

2000 V/µs minimum at 125°C

■Minimizes Snubber Networks

for Protection

■Industry Standard TO-220AB

Package

■High Commutating dI/dt − 4.

A/ms minimum at 125°C

■These are Pb−Free Devices

Features

The BTB12 is dAesigned for high performance full-wave AC control

applications where high noise immunity and high commutating di/

dt are required.

Description

Additional Information

Functional Diagram

MT 1

MT 2

Pin Out

CASE 221A

STYLE 4

Resources Accessories Samples

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

BTB12-600BW3G, BTB12-800BW3G

Surface Mount – 800V

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)

BTB12−600BW3G

BTB12−800BW3G

VDRM,

VRRM

600

800 V

On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) 12 A

Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC= 25°C) ITSM 120 A

Circuit Fusing Consideration (t = 10 ms) I2t 78 A²sec

Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10 ms) VDSM / VRSM VDSM / VRSM +100 V

Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 W

Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 20 W

Average Gate Power (TJ = 125°C) PG(AV) 1. 0 W

Operating Junction Temperature Range TJ-40 to +125 °C

Storage Temperature Range Tstg -40 to +150 °C

Maximum Ratings (TJ = 25°C unless otherwise noted)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Thermal Characteristics

Rating Symbol Value Unit

Thermal Resistance Junction−to−Case (AC)

Junction−to−Ambient

RƟJC

RƟJA

2.3

60 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL260 °C

Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both

directions)

Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both

directions)

Characteristic Symbol Min Ty p Max Unit

Peak Repetitive Blocking Current

(VD = VDRM = VRRM; Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

- - 0.005 mA

- - 1. 0

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

Characteristic Symbol Min Ty p Max Unit

Forward On-State Voltage (Note 2) (ITM = ±17 A Peak) VTM − − 1.55 V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)

MT2(+), G(+)

IGT

2.5 − 50

mAMT2(+), G(−) 2.5 − 50

MT2(−), G(−) 2.5 − 50

Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH− − 50 mA

Latching Current (VD = 24 V, IG = 60 mA)

MT2(+), G(+)

− − 70

mAMT2(+), G(−) − − 90

MT2(−), G(−) − − 70

Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)

MT2(+), G(+)

VGT

0.5 − 1. 7

VMT2(+), G(−) 0.5 − 1. 1

MT2(−), G(−) 0.5 − 1. 1

Gate Non−Trigger Voltage (TJ = 125°C)

MT2(+), G(+)

VGD

0.2 − −

MT2(+), G(−) 0.2 − −

MT2(−), G(−) 0.2 − −

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

BTB12-600BW3G, BTB12-800BW3G

Surface Mount – 800V

Dynamic Characteristics

Characteristic Symbol Min Ty p Max Unit

Rate of Change of Commutating Current, See Figure 10.

(Gate Open, TJ = 125°C, No Snubber) (dI/dt)c 4.0 − − A/ms

Critical Rate of Rise of On−State Current

(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 50 A/µs

Critical Rate of Rise of Off-State Voltage

(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 2000 − − V/µs

Voltage Current Characteristic of SCR

Quadrant Definitions for a Triac

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

VTM Maximum On State Voltage

IHHolding Current

+C urrent

+V oltage

VTM

IDR M at VDR M

on stat e

off stat e

IRR M at VRR M

Quadrant 1

Main Terminal 2 +

Quadrant 3

Main Terminal 2 VTM

All polarities are referenced to MT1.

With in phase signals (using standard AC lines) quadrants I and III are used

MT 1

(+) IGT

GA TE

(+) MT 2

RE F

MT 1

() IGT

GA TE

(+) MT 2

RE F

MT 1

(+) IGT

GA TE

() MT 2

RE F

MT 1

() IGT

GA TE

() MT 2

RE F

MT2 NEGA TIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

VItnardauQIIItnardauQ

ItnardauQIItnardauQ

IGT +I GT

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

BTB12-600BW3G, BTB12-800BW3G

Surface Mount – 800V

Figure 4. Thermal Response

Figure 5. Typical Hold Current Variation

Figure 3. On−State Characteristics

t, TIME (ms)

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.1

0.01 4

10001001010.1

100

0.1

MAXIMUM @ T

= 125°C

TYPICAL AT

= 25°C

MAXIMUM @ T

= 25°C

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

BTB12-600BW3G, BTB12-800BW3G

Surface Mount – 800V

Figure 6. Typical Gate Trigger Current Variation Figure 7. Typical Gate Trigger Voltage Variation

Figure 9. Simpliﬁed Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)

LL1N4007

200 V

MEASURE

CHARGE

CONTROL

CHARGE TRIGGER

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for veriﬁcation of rated (di/dt)c. See AN1048 for additional information

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential Waveform)

RG, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS)

5000

010000100010010

VD = 800 Vpk

TJ = 125°C

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

BTB12-600BW3G, BTB12-800BW3G

Surface Mount – 800V

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are

not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.

Dimensions Part Marking System

12 3

SEATING

PLANE

Pin Assignment

1Main Terminal 1

2Main Terminal 2

3 Gate

4 No Connection

Ordering Information

Device Package Shipping

BTB12−600BW3G TO−220AB (Pb−Free) 1000 Units / Box

BTB12−800BW3G TO−220AB (Pb−Free) 1000 Units / Box

TO 220AB

CASE 221A

STYLE 12

123

1. Dimensioning and tolerancing per ansi y14.5m, 1982.

2. Controlling dimension: inch.

3. Dimension z deﬁnes a zone where all body and lead irregularities are allowed.

Dim Inches Millimeters

Min Max Min Max

A0.590 0.620 14.99 15.75

B0.380 0.420 9.65 10.67

C0.178 0.188 4.52 4.78

D0.025 0.035 0.64 0.89

F0.142 0.147 3.61 3.73

G0.095 0.105 2.41 2.67

H0.110 0.13 0 2.79 3.30

J0.018 0.024 0.46 0.61

K0.540 0.575 13.72 14.61

L0.060 0.075 1.52 1.91

N0.195 0.205 4.95 5.21

Q0.105 0.115 2.67 2.92

R0.085 0.095 2.16 2.41

S0.045 0.060 1. 14 1.52

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1. 15 ---

Z--- 0.080 --- 2.04

BTB12-xBWG

YMAXX

x =6 or 8

Y =Year

M =Month

A =Assembly Site

XX =Lot Serial Code

G =Pb-Free Package