2SK2052-R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-V SERIES Outline Drawings Features Include fast recovery diode High voltage Low driving power TO-3PF 15.5 0.3 2.10.3 1.6 0.3 +0.2 1.1 --0.1 5.45 0.2 5.45 0.2 3.2 +0.3 0.3 20 Min Motor controllers Inverters Choppers 0.3 21.5 5.5 0.2 2.3 0.2 Applications 5.5 9.3 0.3 o3.2 0.2 0.6 +0.2 3.5 0.2 1. Gate 2. Drain 3. Source JEDEC EIAJ Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings ( Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 500 10 40 10 20 80 +150 -55 to +150 Drain(D) . t c u Gate(G) d o r p d e u n i t n o c s Unit V A A A V W C C Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Di Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Symbol V(BR)DSS VGS(th) IDSS Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Reverse recovery charge IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=500V VGS=0V Min. Typ. Max. 500 2.1 Tch=25C Tch=125C VGS=20V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V RG=25 ID=10A VGS=10V IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 3.0 4.0 10 500 0.5 2.0 10 100 0.80 1.10 4.0 8.0 1100 1600 140 210 75 110 25 40 60 90 200 300 90 140 0.95 1.80 150 200 0.75 Units V V A mA nA S pF ns V ns C Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. 30 1.56 Units C/W C/W 1 2SK2052-R FUJI POWER MOSFET Characteristics Typical output characteristics On state resistance vs. Tch 25 3.0 20 2.0 15 ID [A] RDS(on) [] 10 1.0 5 0 0 10 20 0 -50 30 0 50 Tch [ C ] VDS [ V ] 100 150 Typical Drain-Source on state resistance vs. ID Typical transfer characteristics 25 3.0 20 2.0 15 ID RDS(on) [A] [] 10 5 0 0 2 VGS [ V ] d e u n i 1.0 t n o c s Di 4 . t c u d o r p 0 0 6 10 20 ID [ A ] Gate threshold voltage vs. Tch Typical forward transconductance vs. ID 15 6.0 10 4.0 gfs [S] VGS(th) [V] 2.0 5 0 0 5 10 ID [ A ] 15 20 25 0 -50 0 50 100 150 Tch [ C ] 2 2SK2052-R FUJI POWER MOSFET Typical input charge Typical capacitance vs. VDS 101 20 500 400 15 10 0 VDS [ V ] 300 C [nF] VGS [ 10 V ] 200 10-1 5 100 10-2 0 0 10 20 30 40 0 50 VDS [ V ] Qg [ nC ] Forward characteristics of reverse diode Allowable power dissipation vs. Tc 2 10 0 150 100 100 80 101 60 IF [A] PD [W] . t c u 40 100 10-1 0 0.5 1.0 VSD [ V ] t n o c s Di d e u n i 20 d o r p 0 1.5 0 50 100 150 Tc [ C ] Safe operating area 102 Transient thermal impedance 101 ID [A] 100 Rth [C/W] 100 10-1 10-2 10-5 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 10-1 100 101 102 VDS [ V ] 103 3