XMT-10015-B01 15 W, 1.0 GHz RF MOSFET Semiconductor Data General description: The XMT-10015 is an N-Channel enhancement-mode MOSFET featuring XeMOS(R) RF technology. It has been designed to provide high gain with a high degree of linearity at RF frequencies up to 1.0 GHz, and is usable at higher frequencies at lower gain. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +- 20 Vdc Storage Temperature Range Tstg -65 to +150 0 200 0 Operating Junction Temperature TJ C C Characteristics (TC = 25 C unless otherwise noted) 0 Characteristic Thermal Resistance, Junction to Case Symbol Min Typ Max Unit 0 RJC -- -- 2.5 C/W Drain-Source Breakdown Voltage (VGS = 0, lD = 5.0 mAdc) V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28V, VGS = 0) lDSS -- -- 1 mAdc Gate Source Leakage Current (VGS = 20V, VDS = 0) lGSS -- -- 1 AVdc Gate Threshold Voltage (VDS = 10V, lD = 20 mA) VGS(th) 2 3 4 Vdc Drain-Source On-Voltage (VGS = 10V, lD = 1A) VDS(on) -- 0.5 0.8 Vdc (Continued on following page) XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATON WITHOUT FURTHER NOTICE. BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS, THE PERFORMANCE CHARACTERISTICS SHOULD BE VERIFIED BY CONTACTING THE FACTORY. CAUTION: MOS devices are susceptible to damage from electrostatic charge.The user should exercise reasonable precautions in handling and packaging. Xemod Semiconductor Data XMT-10015-B01 www.xemod.com Rev P2 4/98 Page 1 of 2 Characteristics (TC = 25 C unless otherwise noted) 0 Characteristic Symbol Min Typ Max Unit g fs 0.8 1.0 -- S Input Capacitance (VDS = 28V, VGS = 0, f = 1 MHz) Ciss -- 28 -- pF Output Capacitance (VDS = 28V, VGS = 0, f = 1 MHz) Coss -- 13 -- pF Reverse Transfer Capacitance (VDS = 28V, VGS = 0, f = 1 MHz) Crss -- 1.5 -- pF Common Source Power Gain (VDD = 26Vdc, Pout = 15W, lDQ = 100 mA, f = 960 MHz) Gps 13 15 -- dB Drain Efficiency (VDD = 26Vdc, Pout = 15W, lDQ = 100 mA, f = 960 MHz) 45 55 -- % Load Mismatch (VDD = 26Vdc, Pout = 15W, lDQ = 100 mA, f = 960 MHz) Load VSWR 5:1 at All Phase Angles) Forward Transductance (VDS = 10V, lD = 1A) No Degradation in Output Power PACKAGE DIMENSIONS -- PACKAGE B01 Inches Dimension A (package length) B (package width) C (package height) D (lead width) E (flange thickness) F (lead thickness) G (hole spacing) H (lead height) K (lead length) M (ceramic length) N (hole diameter) Min. 0.790 0.220 0.140 0.205 0.035 0.007 0.555 0.055 0.215 0.350 0.120 G Millimeters Max 0.810 0.240 0.160 0.225 0.050 0.009 0.565 0.070 0.255 0.370 0.140 Min. 20.07 5.59 3.56 5.21 0.18 0.20 14.10 2.29 5.47 8.89 3.05 Max 20.57 6.09 4.07 5.71 0.23 0.25 14.36 2.79 6.47 9.39 3.55 B N [2 PL] K D M H F C E MOUNTING PLANE A Controlling dimension = inches Xemod Semiconductor Data XMT-10015-B01 www.xemod.com Rev P2 4/98 Page 2 of 2