XMT-10015-B01
15 W ,1.0 GHz
RF MOSFET
Maximum Ratings
Characteristics (TC= 25
0
C unless otherwise noted)
General description:
The XMT-10015 is an N-Channel enhancement-mode MOSFET
featuring XeMOS®RF technology.It has been designed to provide
high gain with a high degree of linearity at RF frequencies up to 1.0
GHz,and is usable at higher frequencies at lower gain.
Semiconductor Data
Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS +
–20 Vdc
Storage Temperature Range Tstg -65 to +150
0
C
Operating Junction Temperature TJ200
0
C
Characteristic Symbol Min Typ Max Unit
Thermal Resistance,Junction to Case RθJC — — 2.5
0
C/W
Drain-Source Breakdown Voltage V(BR)DSS 65 — — Vdc
(VGS = 0,lD= 5.0 mAdc)
Zero Gate Voltage Drain Current lDSS — — 1 mAdc
(VDS = 28V, VGS = 0)
Gate Source Leakage Current lGSS —— 1µAVdc
(VGS = 20V, VDS = 0)
(Continued on following page)
Gate Threshold V oltage VGS(th) 2 3 4 Vdc
(VDS = 10V, lD= 20 mA)
Drain-Source On-Voltage VDS(on) — 0.5 0.8 Vdc
(VGS = 10V, lD= 1A)
Xemod Semiconductor Data XMT-10015-B01 www.xemod.com Rev P2 4/98 Page 1 o f 2
CAUTION: MOS de vices ar e susceptible to damage fr om electrostatic charge.The user should exercise reasonable precautions in handling and packaging.
XEMOD RESERVES THE RIGHT TO MAKE CHANGES TO THIS SPECIFICATON WITHOUT FURTHER NOTICE. BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS OR USED IN CRITICAL APPLICATIONS,
THE PERFORMANCE CHARACTERISTICS SHOULD BE VERIFIED BY CONTACTING THE FACTORY.
Load Mismatch
(VDD = 26Vdc,Pout = 15W,lDQ = 100 mA,f = 960 MHz) ψNo Degradation in Output Power
Load VSWR 5:1 at All Phase Angles)
Characteristics (TC= 25
0
C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Forward T ransductance gfs 0.8 1.0 — S
(VDS = 10V, lD= 1A)
Input Capacitance Ciss —28—pF
(VDS = 28V, VGS = 0,f = 1 MHz)
Output Capacitance Coss —13 —pF
(VDS = 28V, VGS = 0,f = 1 MHz)
Reverse T ransfer Capacitance Crss — 1.5 — pF
(VDS = 28V, VGS = 0,f = 1 MHz)
Common Source Power Gain Gps 13 15 — dB
(VDD = 26Vdc,Pout = 15W,lDQ = 100 mA,f = 960 MHz)
Drain Efficiency η45 55 — %
(VDD = 26Vdc,Pout = 15W,lDQ = 100 mA,f = 960 MHz)
Xemod Semiconductor Data XMT-10015-B01 www.xemod.com Rev P2 4/98 Page 2 o f 2
B
HC
EF
M
KD
G
N [2 PL]
A
MOUNTING
PLANE
Inches Millimeters
Dimension Min. Max Min. Max
A (package length) 0.790 0.810 20.07 20.57
B (package width) 0.220 0.240 5.59 6.09
C (package height) 0.140 0.160 3.56 4.07
D (lead width) 0.205 0.225 5.21 5.71
E (flange thickness) 0.035 0.050 0.18 0.23
F (lead thickness) 0.007 0.009 0.20 0.25
G (hole spacing) 0.555 0.565 14.10 14.36
H (lead height) 0.055 0.070 2.29 2.79
K (lead length) 0.215 0.255 5.47 6.47
M (ceramic length) 0.350 0.370 8.89 9.39
N (hole diameter) 0.120 0.140 3.05 3.55
Controlling dimension=inches
PACKAGE DIMENSIONS—PACKAGE B01
