DXT651
Document Number: DS31184 Rev: 4 - 2 1 of 5
www.diodes.com January 2011
© Diodes Incorporated
DXT651
60V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXT751)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
Mechanical Data
• Case: SOT89
• Case material: molded Plastic. “Green” molding Compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.052 grams (Approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DXT651-13 KN2 13 12 2,500
Notes: 1. No purposefully added lead.
2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
Top View Device symbol Top View
Pinout
SOT89
KN2 = Product Type Marking Code
= Manufacturer’s Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)
C
E
B
C
E
C
B
KN2
Y
WW
DXT651
Document Number: DS31184 Rev: 4 - 2 2 of 5
www.diodes.com January 2011
© Diodes Incorporated
DXT651
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 3 A
Peak Pulse Collector Current ICM 6 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 1 W
Thermal Resistance, Junction to Ambient Air (Note 4) RθJA 125 °C/W
Thermal Resistance, Junction to Leads RθJL 18.2 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage BVCBO 80 ⎯ ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 60 ⎯ ⎯ V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 5 ⎯ ⎯ V IE = 100μA, IC = 0
Collector-Base Cutoff Current ICBO ⎯ ⎯ 0.1
10 μA VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 100°C
Emitter-Base Cutoff Current IEBO ⎯ ⎯ 0.1 μA VEB = 4V, IC = 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage VCE(sat) ⎯ 0.08
0.23 0.3
0.6 V
V IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
Base-Emitter Saturation Voltage VBE
(
sat
)
⎯ 0.85 1.25 V
IC = 1A, IB = 100mA
Base-Emitter Turn-On Voltage VBE
(
on
)
⎯ 0.8 1 V
VCE = 2V, IC = 1A
DC Current Gain hFE
70
100
80
40
200
200
185
120
⎯
300
⎯
⎯
⎯
VCE = 2V, IC = 50mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
AC C HARACTER IST ICS
Transition Frequency fT 140 200 ⎯ MHz VCE = 5V, IC = 100mA, f = 100MHz
Output Capacitance Cobo ⎯ ⎯ 30 pF
VCB = 10V, f = 1MHz
Switching Times ton
toff ⎯
⎯
35
230 ⎯
⎯ ns
ns VCC = 10V. IC = 500mA,
IB1 = IB2 = 50mA
Notes: 4. Device mounted on FR-4 PCB
5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle ≤2%.
DXT651
Document Number: DS31184 Rev: 4 - 2 3 of 5
www.diodes.com January 2011
© Diodes Incorporated
DXT651
0
0.2
0.4
0.6
0.8
1.0
1.2
025 50 75 100 125 150 175
P
,
P
O
W
E
R
DI
S
S
I
P
A
T
I
O
N
(W)
D
T , AMBIENT TEMPERA TURE (°C)
Fig . 1 Power Di ss ipa ti on vs. Ambient Tem peratur e ( N ot e 3)
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
012345
V , COLLECTOR EMITTER VOLTAGE (V)
CE
I , COLLECTOR CURRENT (A)
C
Fig. 2 T y pical Collector Current vs.Collector-Emitter Vo ltage
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
0
50
100
150
200
250
300
350
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
h , DC CURRENT GAIN
FE
Fig. 3 Typical DC Current Gain
vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 2V
CE
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.0001 0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A )
C
V , COLLECTOR EMITTER
SATURATION VOL TAGE (V)
CE(SAT)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collecto r Cu rrent
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
V , BASE EMITTER TURN-ON VOL TAGE (V)
BE(ON)
Fig. 5 Typical Base-Emitter Turn-On Volta ge
vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 2V
CE
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
V , BASE EMITTER SATURATI O N VOLTAGE (V)
BE(SAT)
Fig. 6 Typical Base-Emitter Saturation Voltag e
vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
DXT651
Document Number: DS31184 Rev: 4 - 2 4 of 5
www.diodes.com January 2011
© Diodes Incorporated
DXT651
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
V , REVERSE VOLTAGE (V)
R
C , OUTPUT CAPACITANCE (pF)
obo
Fig . 7 Typical Ou tput Cap acitan ce C haract eristics
f = 1MHz
0
50
100
150
200
250
020406080100
I , COLLECTOR CURRENT (mA)
C
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
V = 5V
f = 100MHz
CE
Package Outline Dimensions
Suggested Pad Layout
SOT89
Dim Min Max
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.43
D 4.40 4.60
D1 1.52 1.83
E 2.29 2.60
e 1.50 Typ
e1 3.00 Typ
H 3.94 4.25
L 0.89 1.20
All Dimensions in mm
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
e
D
H
L
A
C
E
8° (4X)
B1
B
D1
R0.200
e1
Y1
X1
Y2
Y
C
X (3 x)
Y3 Y4
X2 (2x)
DXT651
Document Number: DS31184 Rev: 4 - 2 5 of 5
www.diodes.com January 2011
© Diodes Incorporated
DXT651
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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