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April 2007
FDG8842CZ Complementary PowerTrench® MOSFET
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
www.fairchildsemi.com
1
FDG8842CZ
Complementary PowerTrench® MOSFET
Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω
Features
Q1: N-Channel
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
Q2: P-Channel
Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A
Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A
Very low level gate drive requirements allowing direct
operation in 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
General Description
These N & P-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage applica-
tions as a replacement for bipolar digital transistors and small
signal MOSFETs. Since bias resistors are not required, this dual
digital FET can replace several different digital transistors, with
different bias resistor values.
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Q1 Q2 Units
VDS Drain to Source Voltage 30 –25 V
VGS Gate to Source Voltage ±12 –8 V
ID
Drain Current -Continuous 0.75 –0.41 A
-Pulsed 2.2 –1.2
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
0.36 W
0.30
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 °C/W
RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415
Device Marking Device Reel Size Tape Width Quantity
.42 FDG8842CZ 7” 8mm 3000 units
S1
G1
D2
D1
G2
S2
S1
S2
G2
D1
D2
G1
Pin 1
SC70-6
Q1
Q2
FDG8842CZ Complementary PowerTrench® MOSFET
www.fairchildsemi.com
2
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown
Voltage
ID = 250μA, VGS = 0V
ID = –250μA, VGS = 0V
Q1
Q2
30
–25 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to 25°C
ID = –250μA, referenced to 25°C
Q1
Q2 25
–21 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V
VDS = –20V, VGS = 0V
Q1
Q2
1
–1 μA
IGSS Gate to Source Leakage Current VGS = ±12V, VDS= 0V
VGS = –8V, VDS= 0V
Q1
Q2 ±10
–100
μA
nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA
VGS = VDS, ID = –250μA
Q1
Q2
0.65
–0.65
1.0
–0.8
1.5
–1.5 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
ID = –250μA, referenced to 25°C
Q1
Q2
–3.0
1.8 mV/°C
rDS(on)
Static Drain to Source On
Resistance
VGS = 4.5V, ID = 0.75A
VGS = 2.7V, ID = 0.67A
VGS = 4.5V, ID = 0.75A ,TJ = 125°C
Q1
0.25
0.29
0.36
0.4
0.5
0.6 Ω
VGS = –4.5V, ID = –0.41A
VGS = –2.7V, ID = –0.25A
VGS = –4.5V, ID = –0.41A ,TJ = 125°C
Q2
0.87
1.20
1.22
1.1
1.5
1.9
gFS Forward Transconductance VDS = 5V, ID = 0.75A
VDS = –5V, ID = –0.41A
Q1
Q2
3
8S
Dynamic Characteristics
Ciss Input Capacitance Q1
VDS = 10V, VGS = 0V, f= 1MHZ
Q2
VDS = –10V, VGS = 0V, f= 1MHZ
Q1
Q2 90
70
120
100 pF
Coss Output Capacitance Q1
Q2
20
30
30
40 pF
Crss Reverse Transfer Capacitance Q1
Q2
15
15
25
25 pF
Switching Characteristics
td(on) Turn-On Delay Time Q1
VDD = 5V, ID = 0.5A,
VGS = 4.5V,RGEN = 6Ω
Q2
VDD = –5V, ID = –0.5A,
VGS = –4.5V,RGEN = 6Ω
Q1
Q2 4
6
10
12 ns
trRise Time Q1
Q2 1
16
10
29 ns
td(off) Turn-Off Delay Time Q1
Q2 9
35
18
56 ns
tfFall Time Q1
Q2 1
40
10
64 ns
QgTotal Gate Charge Q1
VGS =4.5V, VDD = 5V, ID = 0.75A
Q2
VGS = –4.5V, VDD = –5V, ID = –0.41A
Q1
Q2
1.03
1.20
1.44
1.68 nC
Qgs Gate to Source Charge Q1
Q2 0.29
0.31 nC
Qgd Gate to Drain “Miller” Charge Q1
Q2 0.17
0.22 nC
(note 2)
FDG8842CZ Complementary PowerTrench® MOSFET
www.fairchildsemi.com
3
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Electrical Characteristics TJ = 25°C unless otherwise noted
Drain-Source Diode Characteristics and Maximum Ratings
Symbol Parameter Test Conditions Type Min Typ Max Units
ISMaximum Continuous Drain-Source Diode Forward Current Q1
Q2
0.3
–0.3 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 0.3A (Note 2)
VGS = 0V, IS = –0.3A (Note 2)
Q1
Q2 0.76
–0.84
1.2
–1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
a. 350°C/W when mounted on a
1 in2 pad of 2 oz copper . b. 415°C/W when mounted on a minimum pad
of 2 oz copper.
Scale 1:1 on letter size paper.
FDG8842CZ Complementary PowerTrench® MOSFET
www.fairchildsemi.com
4
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0
0.00
0.44
0.88
1.32
1.76
2.20
VGS = 1.5V
VGS = 2.0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 2.7V
VGS =1.8V
VGS = 4.5V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0.00 0.44 0.88 1.32 1.76 2.20
0.6
1.0
1.4
1.8
2.2
2.6
VGS = 4.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT(A)
VGS = 2.7V
VGS = 2.0V
VGS = 1.8V
VGS = 3.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 0.75A
VGS = 4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
12345
0.2
0.4
0.6
0.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID =0.38A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (Ω)
VGS, GATE TO SOURCE VOLTAGE (V)
O n -R es i st a nc e vs G at e to
Source Voltage
Figure 5. Transfer Characteristics
0.0 0.5 1.0 1.5 2.0 2.5
0.00
0.44
0.88
1.32
1.76
2.20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
VDD = 5V
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
2
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce t o D r ai n Di o de
Forward Voltage vs Source Current
FDG8842CZ Complementary PowerTrench® MOSFET
www.fairchildsemi.com
5
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Figure 7.
0.00.20.40.60.81.01.21.4
0
1
2
3
4
5
VDD = 10V
VDD = 15V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 5V
ID = 0.22A
Gate Charge Characteristics Figure 8.
0.1 1 10
1
10
100
200
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.1 1 10 100
0.01
0.1
1
0.005
4
100μs
1ms
1s
DC
100ms
10ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 415OC/W
TA = 25OC
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
rDS(on)
LIMITED
F or w ar d Bi a s S af e
Operating Area
Figure 10.
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
1
10
RθJA = 415OC/W
SINGLE PULSE
TA = 25OC
50
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
Single Pulse Maximum Power
Dissipation
Figure 11. Transient Thermal Response Curve
0.0001 0.001 0.01 0.1 1 10 100 1000
0.01
0.1
1
RθJA = 415oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
FDG8842CZ Complementary PowerTrench® MOSFET
www.fairchildsemi.com
6
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Typical Characteristics (Q2 P-Channel)
01234
0.0
0.3
0.6
0.9
1.2
VGS = -2.0V
VGS = -4.5V
VGS = -2.7V
VGS = -1.5V
VGS = -2.5V
VGS = -3.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On Region Characteristics
0.0 0.3 0.6 0.9 1.2
0
1
2
3
4
5
VGS = -3.5V
VGS = -4.5V
VGS = -1.5V
VGS = -2.5V
VGS = -2.0V
VGS = -2.7V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
Figure 14. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 15. Normalized On Resistance
vs Junction Temperature
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -0.41A
VGS = -4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID =-0.22A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (Ω)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
Figure 17. Transfer Characteristics
0.5 1.0 1.5 2.0 2.5
0.0
0.2
0.4
0.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
VDS = -5V
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
3
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
TJ = 25°C unless otherwise noted
Typical Characteristics(Q2 P-Channel) TJ = 25°C unless otherwise noted
Figure 19. Gate Charge Characteristics
0.0 0.4 0.8 1.2 1.6
0
1
2
3
4
5
VDD = -10V
VDD = -15V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -5V
ID = -0.41A
0.1 1 10
1
10
100
200
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
25
Figure 20. Capacitance vs Drain
to Source Voltage
F i g u r e 2 1 . F o r w a r d B i a s S a f e
Operating Area
110
0.01
0.1
1
0.3 50
3
1ms
1s
DC
100ms
10ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 415oC/W
TA = 25oC
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
rDS(on)
LIMITED
Figure 22. Single Pulse Maximum Power
Dissipation
0.001 0.01 0.1 1 10 100 1000
0.1
1
10
P(PK), PEAK TRANSIENT POWER (W)
TA = 25OC
RθJA = 415OC/W
SINGLE PULSE
20
t, PULSE WIDTH (s)
Figure 23. Transient Thermal Response Curve
10-3 10-2 10-1 100101102103
0.01
0.1
1
RθJA = 415oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
FDG8842CZ Complementary PowerTrench® MOSFET
www.fairchildsemi.com
7
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
FDG8842CZ Complementary PowerTrench® MOSFET
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I26
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