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VTB Process Photodiodes VTB5051H
PRODUCT DESCRIPTION
Pl anar sili co n photo diod e i n a “f l at” wi n dow, du al
lead TO-5 package. Cathode is common to the
case. These diodes have very high shunt
resistance and have good blue response.
PACKAGE DIMENSIONS inch (mm)
CASE 14 TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in
2
(14.8 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St orag e Tempe r at u r e: -4 0°C to 11 0° C
Operating Temper a t ure: -4 0°C to 11 0° C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB5051H UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 85 130 µA
TC ISC ISC Tem perat ure Coefficient 2850 K .12 .23 %/° C
VOC Open Circuit Voltage H = 100 2850 K 490 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 250 pA
RSH Shunt Resistance H = 0, V = 10 mV .56 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 3.0 nF
SRSensitivity 365 nm .10 A/W
λrange Spectral Application Range 320 1100 nm
λpSpectral Response - Peak 920 nm
VBR Breakdown Voltage 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±50 Degrees
NEP Noise Equivalent Power 2.1 x 10-14 (Typ .)
D* Specif ic Detectivit y 1.8 x 10 13 (Ty p.) WHz⁄
cm Hz W⁄
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
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