6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 1 of 2
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 140 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Curren t IC1.0 Adc
Total Power Dissipation
@ TA = +250C(1)
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
@ TC = +250C(2)
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
PT
0.8
0.5
0.5
0.5
5.0
1.8
1.8
1.16
W
W
Operating & Storage Jct Temp Range TJ, Tstg -65 to +175 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
ThermalResistance,Junction-to-Ambient
2N3019, S
All other
devices
RθJA 175
325
0C/W
0C/W
1) Derate linearly 5.7 mW/0C above TA = +600C.
2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB
for TC ≥ +250C.
3) Derate linearly at 3.08 mW/ 0C above TA = +37.50C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc V(BR)CEO 80 Vdc
TECHNICAL DATA
2N3019, 2N3019S
TO-39 (TO-205AD)
2N3700
TO- 18 (TO-206AA)
2N3057A
TO-46 (TO-206AB)
2N3700UB
3 PIN
SURFACE MOUNT
2N3019 JAN, JTX, JTX V, JANS
2N3019S JAN, JTX, JTX V, JANS
2N3057A JAN, JTX, JTX V, JANS
2N3700 JAN, JTX, JTX V, JANS
2N3700UB JAN, JTX, JTXV, JANS
Processed per MIL-PRF-19500/391
LOW
-
POWER NPN SILICON TRANSISTORS
MIL-PRF
QML
DEVICES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Page 2 of 2
2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES
ELECTRICAL CHARACTERISTICS (con’ t)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 90 Vdc ICES 10 ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 7.0 Vdc IEBO 10
10 ηAdc
µAdc
Collecto r-Base Cutoff Current
VCB = 140 Vdc ICBO 10 µAdc
ON CHARACTERISTICS (1)
Forward-Current Tran sfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
hFE
100
50
90
50
15
300
200
200
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc VCE(sat) 0.2
0.5 Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VBE(sat) 1.1 Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hfe 80 400
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz hfe5.0 20
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 12 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 60 pF
Noise Figu re
VCE = 10 Vdc, IC = 100µAdc, Rg = 1 kΩ:; Power Bandwith =200
Hz NF 4 dB
Collecto r-Base Time Constant
IC = 10 mAdc, VCB = 10 Vdc, f = 79.8 MHz r1b,Cc400 ps
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 10 ms
Test 1 VCE = 10 Vdc
2N3019, 2N3019S IC = 500 mAdc
2N3057A, 2N3700, 2N3700UB IC = 180 mAdc
Test 2 V
CE = 40 Vdc
2N3019, 2N3019S IC = 125 mAdc
2N3057A, 2N3700, 2N3700UB IC = 45 mAdc
Test 3 V
CE = 80 Vdc
2N3019, 2N3019S IC = 60 mAdc
2N3057A, 2N3700, 2N3700UB IC = 22.5 mAdc
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
