| 33 6 -4X MAXIMUM RATINGS 2N3905 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vde 2N3906 Coilector-Base Voltage VcBO 40 Vde tter-Base Vol Vv 50 Vd Emurter Base Voltage EBO c CASE 29-04, STYLE 1 Collector Current Continuous Ie 200 mAdc TO-92 (TO-226AA) Total Device Dissipation @ Ta = 25C Pp 625 mw Derate above 25C 50 mW C Total Power Dissipation @ Ta = 60C PD 250 mw 4 Collector Total Device Dissipation @ Te = 25C Pp 15 Watts Derate above 25C 12 mW C 2 Operating and Storage Junction Ty. Tstg -55 to +150 c Base Temperature Range 1 Emitter *THERMAL CHARACTERISTICS : : GENERAL PURPOSE - Characteristic Symbol Max Unit TRANSISTOR Thermal Resistance, Junction to Case Resc 833 "cw Thermal Resistance, Junction to Ambient Rea 200 C.W PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted } [ Characteristic Symbol Min Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voitage(1) ViBRICEO 40 _ Vde (Ic = 1.0 mAdc, Ig = 0} Collector-Base Breakdown Voltage ViBRICBO 40 Vac (Ic = 10 pAde, Ie = 0) Emitter-Base Breakdown Voltage ViBRIEBO 50 _ Vde (Ig = 10 wAde, I = 0) Base Cutoff Current _ BL _ 50 nAde j (Veg = 30 Vde, Vge = 3.0 Vde) Collector Cutoff Current IceEx _ 50 nAdc ' \Vce = 30 Vde, Vge = 3.0 Vdc) z ON CHARACTERISTICS(1) t OC Current Gain NFE _ \ (I = 01 mAde, Veg = 10 Vde) 2N3905 30 _ 2N3906 60 , dig = 10 mAde, Veg = 1.0 Vde) 2N3905 40 - ' 2N3906 80 _ (lc = 10 mAde, Vcg = 1.0 Vde} 2N3905 50 150 ' 2N3906 100 300 Uc = 50 mAdc, Vcg = 1.0 Vde) 2N3905 30 _ 2N3906 60 (l = 100 mAde, Veg = 1.0 Vde} 2N3905 15 _ 2N3906 30 cd Coltector-Emitter Saturation Valtage VCE(sat) Vde li = 10 mAde, Ig = 10 mAdc) ~ 0.25 lic = 50 mAdg, Ig = 5.0 mAdc) = 0.4 Base-Eminer Saturation Vaitage VBE{sat} Vde tle = 10 mAde, Ig = 10 mAdc} 0 65 0.85 {ig = 50 mAde, Ig = 5.0 mAdc) _ 0.95 SMALL-SIGNAL CHARACTERISTICS Carent-Gain Bandwidth Product ff MHz "e - 10 mAdc, Voce = 20 Vde, f = 100 MHz) 2N3905 200 _ ST 2N3906 250 _ it Capacitance Cobo - 45 pF ~"63 += 50 Vode, ig = 0, f = 100 kHz) ee MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-7Sore ee 2N3905, 2N3906 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted ) Characteristic Symbol! Min Max Unit Input Capacitance Cibo _ 100 pF (Vge = 05 Vde, I = 0, f = 100 kHz) Input Impedance Ne k ohms (ic = 10 mAdc, Vcg = 10 Vde, f = 10 kHz) 2N3905 05 80 2N3906 20 12 Voltage Feedback Ratio re x 10-4 (Il = 1.0 mAdc, Veg = 10 Vde, f = 10 kHz) 2N3905 01 50 2N3906 01 10 Smail-Signal Current Gain fe _ (l = 1.0 mAdc, Vee = 10 Vde, f = 10 kHz) 2N3905 50 200 2N3906 100 400 Output Admittance hoe umhos lic = 10 mAde, Veg = 10 Vde, f = 10 kHz) 2N3905 10 40 2N3906 3.0 60 Norse Figure NF da {lc = 100 wAde, Veg = 50 Vde, Rg = 10k ohm, 2N3905 _ 50 f = 10 Hz to 15.7 kHz) 2N3906 _ 40 SWITCHING CHARACTERISTICS Delay Time (Vcc = 30 Vde, Vgg = 05 Vde td _- 35 ns Rise Time lc = 10 mAdc, !g1 = 10 mAdc) tr _ 35 ns Storage Time 2N3905 ts _ 200 ns (Vec = 30 Vde, ic = 10 mAdc, 2N3806 = 225 Fall Time lg1 = Sg2 = 10 mAdc} 2N3905 tf 60 ns 2N3906 _ 75 (1) Pulse Width < 300 ys, Duty Cycle < 2.0%. FIGURE 1 ~ DELAY AND RISE TIME FIGURE 2 ~ STORAGE AND FALL TIME EQUIVALENT TEST CIRCUIT EQUIVALENT TEST CIRCUIT ~30V ~ 49, yr te <lons -30V r-< 10 ns 278 -osv4 C, < 40 pF ~106V 300 05 10 < ty < 500 us DUTY CYCLE = 2% * ourrcyeie=2% 1 "Total shunt capacitance of test jig and connectors TRANSIENT CHARACTERISTICS T, = 25C --- T, = 125C FIGURE 3 CAPACITANCE FIGURE 4 - CHARGE DATA 5000 3000 2000 1000 700 500 CAPACITANCE (pF) Q CHARGE (pCi 300 200 70 30 ol 02 03 05 O7 10 20 30 5070 10 20-30 50 10 20 30 $070 10 20 (30 $0 70 100 200 REVERSE BIAS (VOLTS) le COLLECTOR CURRENT ima) MOTOROLA SMALL-SIGNAL SEMICON DUCTORS 2-82N3905, 2N3906 Titel inst Ai ONOESE FIGURE (ab) fh, OC CURRIE GaN FIGURE 5 TURN ON TIME FIGURE 6 FALL TIME 1 i ty FALL TIME (ns) ta@Voa = 0 OV 20 30 $070 10 20-30) 5070 100 200 10 20 30 5070 10 20 30 $0 70 160 200 le COLLECTOR CURRENT (mal le COLLECTOR CURRENT imAl AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS Vce = $0 Vde, Ta = 25%, FIGURE 7 Bandwidth = 10 Hz FIGURE 8 5) 12 ! | i t 49 t |_ SOURCE RESISTANCE 2000 le = 10ma ag Nee || s 30 + + = NY | SOURCE RESISTANCE - 200.0 s mo | le O5ma = 690 | | | | | 2 20 3 Ft - g , ' 1 ; eo 4 0 / | | { t ~ |_| ' T = SOURCE RESISTANCE = 204 | | - 10 le - 100 pA SOURCE RESISTANCE = 20k T] 20 ! le - 50 pa | it ft | 0 0 oi 02 Os 10 20 040 10-20 ag 100 Ol 02 04 10 20 40 10 2040 100 f FREQUENCY (kHz) R, SOURCE RESISTANCE .k ohmsi at h PARAMETERS (Vee = 10 Vde, f = 1.0 kHz, T, = 25C) FIGURE 9 CURRENT GAIN FIGURE 10 OUTPUT ADMITTANCE 100 we w ~ oS o a nN Oo hy, OUTPUT ADMITTANCE {,cmhos) Q ~ Q \ 1 t i | 02 93 0$ 97 19 20 30 $ 790 10 le COLLECTCR CURRENT mA le COLLECTGR CURRENT mA un o Qo 92 43 a5 a? 10 29 30 $0 07 19 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-92N3905, 2N3906 h... INPUT IMPEDANCE th ohms) 01 hgge OC CURRENT GAIN (NORMALIZED) Voge COLLECTOR EMITTER VOLTAGE (VOLTS) FIGURE 11 INPUT IMPEDANCE FIGURE 12 VOLTAGE FEEDBACK RATIO h,, VOLTAGE FEEDBACK RATIO(X 10) 02 03 05 07 10 20 30 50 70 10 01 02 03 05 07 Lo 20 30 $0 70 10 le COLLECTOR CURRENT mA} lg COLLECTOR CURRENT mA} STATIC CHARACTERISTICS FIGURE 13 DC CURRENT GAIN T, - + 125C 25C $5-C | 02 03 05 O7 10 200030 50 70 10 20 39 50 70 100 200 te COLLECTOR CURRENT (mA) FIGURE 14 COLLECTOR SATURATION REGION le = 10 mA 901 002 003 g05 007 O1 Q2 03 os (07 10 20 40 $0 70 10 ly BASE CURRENT mal MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-10* * 2N3905, 2N3906 V, VOLTAGE (VOLTS) 10 08 06 04 02 FIGURE 15 ON VOLTAGES Ty = 25C Vat(sary @lc/ty 10 racy Vests) @ le/Iy = 10 10,20 5a 10 20 50 100 200 le, COLLECTOR CURRENT (mA) Oy, TEMPERATURE COEFFICIENTS (mV/C) FIGURE 16 TEMPERATURE COEFFICIENTS Aye tor Veter 225C 10 +125 C -5C 10 +25-C +25C 10 + 125C peace 55C TO +25C 20 400 60 80 100 120 140-160 :180.. 200 Ie, COLLECTOR CURRENT (mA) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-11