($ (# Preferred Device / ' ' ' 5 '1 ) These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications, where board space is at a premium. The DAP202U device is housed in the SC-70/SOT-323 package. http://onsemi.com Features * * * * Fast trr Low CD Available in 8 mm Tape and Reel Pb-Free Package is Available MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc 2.0 Adc Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current MARKING DIAGRAMS 3 1 P9 SC-75 CASE 463 STYLE 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating 2 Symbol Max Unit PD 150 mW Power Dissipation Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ + 150 C NB SC-70 CASE 419 ORDERING INFORMATION Device DAP222 Package Shipping SC-75 3000/Tape & Reel DAP202U SC-70 3000/Tape & Reel DAP222T1 SC-75 3000/Tape & Reel SC-75 (Pb-Free) 3000/Tape & Reel DAP202T1G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 April, 2004 - Rev. 4 559 Publication Order Number: DAP222/D DAP222, DAP202U ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V -- 0.1 Adc Forward Voltage VF IF = 100 mA -- 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 A 80 -- Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz -- 3.5 pF trr(2) ttt(3) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR IF = 5.0 mA, VR = 6.0 V, RL = 50 , Irr = 0.1 IR -- - 4.0 10.0 ns Reverse Recovery Time DAP222 DAP202U 9. t = 1 S 10. trr Test Circuit for DAP222 in Figure 4. 11. trr Test Circuit for DAP202U in Figure 5. TYPICAL ELECTRICAL CHARACTERISTICS $ 5 2! " " "1 "4 "2 " - * - 6 - 6 5 2! " 5 !! " " " 5 ! 5 ! Figure 1. Forward Voltage 1 - - - 6 - 6 Figure 2. Reverse Current ")! $; " 5 ! 5 ! " $ - $ 5 =1 $ $ % $ *$ $& "! " ! " ")! 1 4 - - - 6 - 6 Figure 3. Diode Capacitance http://onsemi.com 560 2 ! DAP222, DAP202U ?, ?; ? ?,, ? > 6 ,, 5 " 3> - IF = 5.0 mA VR = 6 V RL = 100 tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the DAP222 ?, ?; ? ?,, ? > 6 ,, 5 " 3> - tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 5. Reverse Recovery Time Test Circuit for the DAP202U http://onsemi.com 561 IF = 5.0 mA VR = 6 V RL = 100 OUTPUT PULSE