Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 4
559 Publication Order Number:
DAP222/D
($ (#
Preferred Device
/' ' '
5'1 )
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SC−75/SOT−416 package which is
designed for low power surface mount applications, where board
space is at a premium. The DAP202U device is housed in the
SC−70/SOT−323 package.
Features
•Fast trr
•Low CD
•Available in 8 mm Tape and Reel
•Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage VR80 Vdc
Peak Reverse Voltage VRM 80 Vdc
Forward Current IF100 mAdc
Peak Forward Current IFM 300 mAdc
Peak Forward Surge Current 2.0 Adc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD150 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg −55 ~ +150 °C
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Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
DAP222 SC−75 3000/Tape & Reel
DAP202U SC−70 3000/Tape & Reel
SC−75
CASE 463
STYLE 3
MARKING
DIAGRAMS
P9
1
2
3
NB
SC−70
CASE 419
DAP222T1 SC−75 3000/Tape & Reel
DAP202T1G SC−75
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DAP222, DAP202U
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560
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current IRVR = 70 V — 0.1 Adc
Forward Voltage VFIF = 100 mA — 1.2 Vdc
Reverse Breakdown Voltage VRIR = 100 A80 —Vdc
Diode Capacitance CDVR = 6.0 V, f = 1.0 MHz — 3.5 pF
Reverse Recovery Time DAP222
DAP202U
trr(2)
ttt(3)
IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
IF = 5.0 mA, VR = 6.0 V, RL = 50 , Irr = 0.1 IR
—
−
4.0
10.0
ns
9. t = 1 S
10.trr Test Circuit for DAP222 in Figure 4.
11. trr Test Circuit for DAP202U in Figure 5.
TYPICAL ELECTRICAL CHARACTERISTICS
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- * -6 -6
"4 "2 " "
"
"
- - -6 -6
"
"
"
" 1 !
")!
- - -6 -6
"!
"!
"
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142
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Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
5 !°
5 !°
5 2!°
5 !!°
5 !°
$-$$µ
5 2!°
5 =1°
5 !°
DAP222, DAP202U
http://onsemi.com
561
6
?,?;
?
>
3>
-tp = 2 s
tr = 0.35 ns
?,,
?
,, 5 "
IF = 5.0 mA
VR = 6 V
RL = 100
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the DAP222
6
?,?;
?
>
3>
-tp = 2 s
tr = 0.35 ns
?,,
?
,, 5 "
IF = 5.0 mA
VR = 6 V
RL = 100
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 5. Reverse Recovery Time Test Circuit for the DAP202U
