12214 TKIM TC-00003086/N0508 MSIM TC-00001683/13106DA MSIM TB-00001810 No.A0188-1/4
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
January, 2014
2SB817C
Bipolar Transistor
140V, 12A, Low VCE(sat) PNP TO-3P-3L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
Large current capacitance
Wide SOA and high durability against breakdown
Adoption of MBIT process
Speci cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector to Base Voltage VCBO -160 V
Collector to Emitter Voltage VCEO -140 V
Emitter to Base Voltage VEBO --6 V
Collector Current IC--12 A
Collector Current (Pulse) ICP --20 A
Collector Dissipation PC2.5 W
Tc=25°C 120 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7539-001
Ordering number : ENA0188B
Product & Package Information
• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
Minimum Packing Quantity
: 30 pcs./tube
Marking Electrical Connection
1 : Base
2 : Collector
3 : Emitter
TO-3P-3L
15.6
1.5
0.6
2.0
1.0
123
18.4
10.0
16.76
5.45 5.45
3.2 7.0
3.5 5.0
19.9
20.0
3.0
4.8
13.6
1.4
2SB817C-1E
B817C
LOT No.
2
3
1
2SB817C
No.A0188-2/4
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=--160V, IE=0A --0.1 mA
Emitter Cutoff Current IEBO VEB=--4V, IC=0A --0.1 mA
DC Current Gain hFE1V
CE=--5V, IC=--1A 100 200
hFE2V
CE=--5V, IC=--5A 35
Gain-Bandwidth Product fTVCE=--5V, IC=--1A 10 MHz
Output Capacitance Cob VCB=--10V, f=1MHz 280 pF
Base to Emitter Voltage VBE VCE=--5V, IC=--5A
--1.5
V
Collector to Emitter Saturation Voltage VCE(sat) IC=--5A, IB=--0.5A
--0.3 --2.0
V
Collector to Base Breakdown Voltage V(BR)CBO IC=--5mA, IE=0A --160 V
Collector to Emitter Breakdown Voltage V(BR)CEO IC=--50mA, RBE=--140 V
Emitter to Base Breakdown Voltage V(BR)EBO IE=--5mA, IC=0A --6 V
Turn-ON Time ton See speci ed Test Circuit. 0.45 μs
Storage Time tstg 1.75 μs
Fall Time tf0.25 μs
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SB817C-1E TO-3P-3L 30pcs./tube Pb-Free
VRRB
VCC= --50VVBE=5V
++
507
INPUT
OUTPUT
RL=
107
100MF 470MF
PW=20MsIB1
D.C.¾b1% IB2
IC= --10IB1=10IB2= --5A
IC -- VBE
Base to Emitter Voltage, VBE -- V
Collector Current, IC -- A
0--0.5 --1.0 --1.5
IT03412
0
--1
--2
--3
--4
--5
--6
--7
--8
VCE= --5V
Ta=120°C
25°C
--40°C
IC -- VCE
Collector to Emitter Voltage, VCE -- V
Collector Current, IC -- A
IT03410
0
--2
--4
--6
--8
--10
--12
--14
--16
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
--500mA
--400mA
--300mA
--200mA
--100mA
--40mA
--20mA
IB=0mA
2SB817C
No.A0188-3/4
1.0 10
23 57 100
23 57 23
--0.01
2
--10
2
3
5
--1.0
2
3
5
7
--0.1
2
3
5
7
3
5
7
ICP=--20A
10ms
100ms
DC operation
1ms
IC=--12A
IT17372
PC=120W
--0.01 --0.1
23 57 --1.0
23 57 --10
23 57
--0.01
2
3
5
7
--0.1
2
3
5
7
--1.0
2
IT03416
IC / IB=10
Ta=120oC
--40oC
0
0.5
1.0
1.5
2.0
2.5
3.0
2006040 80 100 140120 160
IT03419
25o
C
--0.01 --0.1
23 57 --1.0
23 57 --10
23 57
10
2
3
5
7
100
2
3
IT03414
25oC
--40
oC
VCE= --5V
Ta=120
o
C
Collector Dissipation, PC-- W
Ambient Temperature, Ta -- oC
PC -- Ta
S O A
Collector Current, IC -- A
Collector to Emitter Voltage, VCE -- V
VCE(sat) -- IC
Collector Current, IC -- A
Collector to Emitter
Saturation Voltage, VCE(sat) -- V
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
Single pulse
Tc=25oC
No heat sink
Collector Dissipation, PC-- W
Case Temperature, Tc -- oC
PC -- Tc
0
140
100
120
60
80
40
20
2006040 80 100 140120 160
IT10416
2SB817C
PS No.A0188-4/4
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Mass (g) Unit
1.8
* For reference
mm
Outline Drawing
2SB817C-1E
Mouser Electronics
Authorized Distributor
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2SB817C-1E