TSSF4500
Document Number 81040
Rev. 1.5, 23-Feb-07
Vishay Semiconductors
www.vishay.com
1
94 8688
Not for New Design
High Speed Infrared Emitting Diode in Side View Package
Description
TSSF4500 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package with
spherical side view lens.
The new technology combines the high speed of DH-
GaAlAs with the efficiency of standard GaAlAs and
the low forward voltage of the standard GaAs techno-
logy.
Features
• High modulation bandwidth (10 MHz)
• Extra high radiant power and high radiant
intensity
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 22°
• Peak wavelength λp = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (PB)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared high speed remote control and free air
data transmission systems with high modulation
frequencies or high data transmission rate require-
ments.
• TSSF4500 is ideal for the design of transmission
systems according to IrDA requirements and for
carrier frequency based systems (e.g. ASK/FSK -
coded, 450 kHz or 1.3 MHz).
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
e4
Parameter Test condition Symbol Value Unit
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 1.5 A
Power dissipation PV170 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40...+ 100 °C
Storage temperature range Tstg - 40...+ 100 °C
Soldering temperature t ≤ 5sec, 2 mm from case Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 450 K/W
www.vishay.com
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Document Number 81040
Rev. 1.5, 23-Feb-07
TSSF4500
Vishay Semiconductors
Not for New Design
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Package Dimensions in mm
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 100 mA, tp = 20 ms VF1.35 1.6 V
IF = 1.5 A, tp = 100 µs VF2.4 V
Temp. coefficient of VFIF = 100 mA TKVF - 1.7 mV/K
Reverse current VR = 5 V IR10 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj160 pF
Parameter Test condition Symbol Min Typ. Max Unit
Radiant intensity IF = 100 mA, tp = 20 ms Ie10 20 mW/sr
IF = 1 A, tp = 100 µs Ie200 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe35 mW
Temp. coefficient of φeIF = 100 mA TKφe- 0.7 %/K
Angle of half intensity ϕ± 22 deg
Peak wavelength IF = 100 mA λp870 nm
Spectral bandwidth IF = 100 mA Δλ 40 nm
Temp. coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr30 ns
Fall time IF = 100 mA tf30 ns
9612206
TSSF4500
Document Number 81040
Rev. 1.5, 23-Feb-07
Vishay Semiconductors
www.vishay.com
3
Not for New Design
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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