GS66508T-E01
Top cooled 650V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Preliminary – Rev 150331
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
Features
– 650V enhancement mode power switch
– Top cooled configuration
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Reverse current capability
– Integral source sense
– Dual gate pads for optimal board layout
– Zero reverse recovery loss
– RoHS 6 compliant
Applications
– On-board battery chargers
– 400V DC-DC conversion
– Inverters, UPS, and VFD motor drive
– AC-DC power supplies (PFC & primary)
– VHF small form factor power adapters
– High frequency, high efficiency power
conversion
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Symbol
Value
Units
Operating Junction Temperature
TJ
-55 to +150
°C
Storage Temperature Range
TS
-55 to +150
°C
Drain-to-Source Voltage
VDS
650
V
Gate-to-Source Voltage
VGS
±10
V
Continuous Drain Current (Tcase=25°C)
IDS(cont)25
30
A
Continuous Drain Current (Tcase=100°C)
IDS(cont)100
23
A
Pulsed Drain Current (Tcase=25°C)
ID‚pulse
60
A
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Symbol
Value
Units
Thermal Resistance (junction to case)
RΘJC
0.50
°C /W
Maximum Soldering Temperature (MSL3 rated)
TSOLD
260
°C
(2) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm2 copper area (thickness 70μm) for thermal pad
connection. PCB is vertical without air stream cooling.
top view
D
S
G
TP
TP = thermal pad - internally connected to
the source (S) and to the substrate.
G
GS66508T-E01
Top cooled 650V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Preliminary – Rev 150331
© 2009-2015 GaN Systems Inc.
2
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
Electrical Characteristics (Typical values at TCASE= 25°C unless otherwise noted)
Parameters
Symbol
Value
Units
Conditions
Drain-to-Source Breakdown Voltage (Min.)
BVDSS
650
V
VGS =0V
Drain-to-Source On Resistance (TJ =25°C)
RDS(ON)
55
mΩ
VGS =7V, TJ=25°C
Drain-to-Source On Resistance (TJ=150°C)
140
mΩ
VGS =7V, TJ=150°C
Gate Threshold Voltage
VGS(th)
1.6
V
VDS =VGS
Drain to Source Leakage Current (TJ=25°C)
IDSS
2.0
µA
VDS=650V
VGS =0V, TJ=25°C
Drain to Source Leakage Current (TJ=150°C)
400
µA
VDS=650V
VGS =0 V, TJ=150°C
Gate to Source Current
IGS
40
µA
VGS=7V, VDS=0V
Gate Resistance
RG
TBD
Ω
f=1MHz, open drain
Gate Plateau Voltage
Vplat
3.0
V
VDS=400V
Source-Drain Reverse Voltage
VSD
2.8
V
VGS=0V, TJ =25°C
Input Capacitance
CISS
200
pF
VDS=400V
VGS=0V
f=1MHz
Output Capacitance
COSS
67
Reverse Transfer Capacitance
CRSS
2.0
Effective Output Capacitance, Energy Related
Co(er)
88
pF
VGS =0V
VDS=0 to 400V
Effective Output Capacitance, Time Related
Co(tr)
143
pF
ID =constant
VGS =0V
VDS=0 to 400V
Total Gate Charge
QG(TOT)
6.5
nC
VGS=0 to 7V
VDS=400V
Gate-to-Source Charge
QGS
1.4
nC
Gate-to-Drain Charge
QGD
2.8
nC
Reverse Recovery Charge
QRR
0
nC
Output Charge
QOSS
43
5
7
114
nC
GS66508T-E01
Top cooled 650V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Preliminary – Rev 150331
© 2009-2015 GaN Systems Inc.
3
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
Package Dimensions
www.gansystems.com North America ! Europe ! Asia
Important Notice – Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed,
authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may
result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of
performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of
intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein
is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply.
© 2009-2015 GaN Systems Inc. All rights reserved.
