SMBT2907A/MMBT2907A PNP Silicon Switching Transistor * Low collector-emitter saturation voltage 2 3 * Complementary type: 1 SMBT2222A / MMBT2222A (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 60 Collector-base voltage VCBO 60 Emitter-base voltage VEBO 5 Collector current IC 600 Base current IB 100 Peak base current IBM 200 Total power dissipation Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS V mA TS 77 C -65 ... 150 Value 220 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-09-30 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 60 Unit V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 60 - - V(BR)EBO 5 - - IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 50 V, IE = 0 - - 0.01 VCB = 50 V, IE = 0 , TA = 150 C - - 10 - - 10 Emitter-base cutoff current IEBO nA VEB = 5 V, IC = 0 DC current gain1) - hFE IC = 100 A, VCE = 10 V 75 - - IC = 1 mA, VCE = 10 V 100 - - IC = 10 mA, VCE = 10 V 100 - - IC = 150 mA, VCE = 10 V 100 - 300 IC = 500 mA, VCE = 10 V 50 - - Collector-emitter saturation voltage1) V VCEsat IC = 150 mA, IB = 15 mA - - 0.4 IC = 500 mA, IB = 50 mA - - 1.6 IC = 150 mA, IB = 15 mA - - 1.3 IC = 500 mA, IB = 50 mA - - 2.6 Base emitter saturation voltage-1) 1Puls VBEsat test: t 300s, D = 2% 2 2011-09-30 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 200 - - MHz Ccb - - 8 pF Ceb - - 30 td - - 10 tr - - 40 tstg - - 80 tf - - 30 AC Characteristics Transition frequency fT IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA 3 2011-09-30 SMBT2907A/MMBT2907A Test circuit Delay and rise time -30 V Input Z 0 = 50 t r < 2ns 0 -16 V 200 Osc. t r < 5 ns 1 k 50 200 ns EHN00053 Storage and fall time -30 V +15 V Input Z 0 = 50 t r < 2 ns 0 -30 V 1 k 1 k 200 Osc. t r < 5 ns 50 200 ns EHN00069 Oscillograph: R > 100, C < 12pF, t r < 5ns 4 2011-09-30 SMBT2907A/MMBT2907A DC current gain hFE = (IC) VCE = 5 V 10 3 Saturation voltage IC = (VBEsat ; VCEsat) hFE = 10 SMBT 2907/A EHP00754 SMBT 2907/A 10 3 EHP00750 mA h FE C 5 V CE 10 2 150 C V BE 5 25 C 10 2 10 1 -50 C 5 5 10 0 5 10 1 -1 10 10 0 10 1 2 10 C mA 10 3 0.4 0.6 0.8 1.0 V 1.2 1.6 Emitter-base capacitance Ceb = (VEB) SMBT 2907/A EHP00749 30 pF 26 5 10 0.2 Collector-base capacitance Ccb = (VCB) CCB0(CEB0) fT 0 VBE sat , VCE sat Transition frequency fT = (IC) VCE = 5 V 10 3 MHz 10 -2 10 -1 2 24 22 20 18 16 14 12 5 CEB 10 8 6 4 10 1 10 0 5 10 1 5 10 2 mA 5 2 0 10 3 C CCB 4 8 12 16 V 22 VCB0(VEB0 5 2011-09-30 SMBT2907A/MMBT2907A Collector-base capacitance CCB = (VCB) Total power dissipation P tot = (TS) f = 1MHz 10 2 pF Ccb SMBT 2907/A EHP00747 360 mW 5 300 Ptot 270 10 1 240 210 180 150 5 120 90 60 30 10 0 10 -1 5 10 0 5 10 1 5 V 0 0 10 2 15 30 45 60 75 90 105 120 VCB Delay time td = (IC) Rise time tr = (IC) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 SMBT 2907/A Ptot max 5 Ptot DC EHP00748 tp D= T C 150 TS 10 3 SMBT 2907/A ns tp t r, t d T 10 2 10 1 VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V 5 tr D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 EHP00751 10 2 td 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 1 0 10 10 0 5 10 1 5 10 2 mA 5 10 3 C tp 6 2011-09-30 SMBT2907A/MMBT2907A Storage time tstg = (IC) 10 3 t stg Fall time tf = (IC) SMBT 2907/A EHP00752 10 3 ns tf 5 SMBT 2907/A EHP00753 ns VCC = 30 V 5 h FE = 20 h FE = 10 10 2 5 10 2 h FE = 10 5 h FE = 20 10 1 0 10 5 10 1 5 10 2 mA 5 10 10 1 0 10 3 5 10 1 5 10 2 mA 5 10 3 C C 7 2011-09-30 Package SOT23 SMBT2907A/MMBT2907A 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 8 2011-09-30 SMBT2907A/MMBT2907A Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2011-09-30