TOSHIBA 188302 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 188302 ULTRA HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 2.4401 e@ Small Package : SC-70 1.25+0.1 @ Low Forward Voltage > VF (3)=0.90V (Typ.) , e Fast Reverse Recovery Time : tpyp=1.6ns (Typ.) @ Small Total Capacitance : Cp=0.9pF (Typ.) . 2 MAXIMUM RATINGS (Ta =25C) CHARACTERISTIC SYMBOL | RATING | UNIT ay _ | ih Maximum (Peak) Reverse Voltage VRM 85 V 3 1 J | \ Reverse Voltage VR 80 Vv $ Maximum (Peak) Forward Current IpM 300 (*) | mA ; Average Forward Current Io 100 (*) | mA Pa, 1. ANODE 1 Surge Current (10ms) Irom 2 (*) A | e ANODE? 2 Power Dissipation P 100 mW USM CATHODE 1 Junction Temperature Tj 125 C JEDEC _ Storage Temperature Range Tstg 55~125 C ELAJ SC-70 (*) Unit Rating. Total Rating=Unit Rating x0.7 TOSHIBA 1-2P1C ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 0.006g CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT VF(1) |Ip=lmA 0.60 | Forward Voltage VF(2) |Ip=10mA 0.72 | Vv VF(3) |Ir=100mA 0.90 | 1.20 I VR=30V 0.1 Reverse Current RQ) R pA IR(2) | VR=80V 0.5 Total Capacitance Cyr Vr=0, f=1MHz 0.9 | 3.0 | pF Reverse Recovery Time try Ifp=10mA, Fig.1 1.6 4.0 ns Fig.1 REVERSE RECOVERY TIME (try) TEST CIRCUIT MARKING INPUT OUTPUT WAVEFORM WAVEFORM 0.014F DUT OUTPUT Tr A 0 _ C3 INPUT Tp= 10mA \ S a I 6V iD I 0.11 SAMPLING R R (RIN =500) PULSE GENERATOR ter (RouT=500) 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2TOSHIBA 188302 Ip VE IR VR 2 s Ta=100C a= & aad & z z, 2 & te ps 5 o DO o a Ta=100C AL. 25 fe 2 s a & S 5 & food 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 30 FORWARD VOLTAGE Vp (V) REVERSE VOLTAGE Vp (V) CT VR trr IF Ta=25C f=1MHz Ta =25C Fig.1 TOTAL CAPACITANCE Cr (pF) REVERSE RECOVERY TIME try (us) 5 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 REVERSE VOLTAGE VR (V) FORWARD CURRENT Ip (mA) 961001 EAA2 @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-07 2/2