03/2012
ALT6708
HELP4TM UMTS900 (Band 8)
WCDMA, LTE Linear PAM
Data Sheet - Rev 2.3
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
• HSPA, LTE Compliant
• 4th Generation HELPTM technology
• HighEfciency(R99waveform):
•40%@POUT = +28.8 dBm
•26%@POUT = +17 dBm
•17%@POUT = +13.5 dBm
•18%@POUT = +7.5 dBm
•10%@POUT = +3.5 dBm
• LowQuiescentCurrent:3mA
• LowLeakageCurrentinShutdownMode:<5µA
• InternalVoltageRegulator
• Integrated“daisychainable”directionalcoupler
withCPLIN and CPLOUT port.
• InternalDCBlocksonallRFports
• Optimized for a 50 ΩSystem
• 1.8V Control Logic
• RoHSCompliantPackage,260oC MSL-3
APPLICATIONS
• Band8LTEWirelessDevices
• Band8(EGSM)WCDMA/HSPAWireless
Devices
1
2
3
4
5
10
9
8
7
6
V
BATT
RF
IN
V
MODE2
V
MODE1
V
EN
CPL
OUT
GND
CPL
IN
RF
OUT
V
CC
Bias Control
Voltage Regulation
CPL
GND at Slug (pad)
PRODUCT DESCRIPTION
TheALT6708HELP4TMPAisa4thgenerationHELPTM
product for LTE and WCDMA devices operating in
UMTS900(Band8).ThisPAincorporatesANADIGICS’
HELP4TMtechnologytodeliverexceptionalefciency
atlowpowerlevelsandlowquiescentcurrentwithout
theneedforexternalvoltageregulatorsorconverters.
ThedeviceismanufacturedusingadvancedInGaP-
PlusTM HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Threeselectablebiasmodesthatoptimizeefciency
fordifferentoutputpowerlevelsandashutdownmode
with low leakage current increase handset talk and
standbytime.A“daisychainable”directionalcoupleris
integratedinthemodule,thuseliminatingtheneedof
anexternalcoupler.Theself-contained3mmx3mm
x1mmsurfacemountpackageincorporatesmatching
networksoptimizedforoutputpower,efciency,and
linearity in a 50 Ωsystem.
ALT6708
2Data Sheet - Rev 2.3
03/2012
ALT6708
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
V
BATT
RF
IN
V
MODE2
V
MODE1
V
EN
1
2
3
4
56
7
8
9
10
CPL
OUT
GND
CPL
IN
RF
OUT
V
CC
1
2
3
4
56
7
8
9
10
PIN NAME DESCRIPTION
1 VBATT Battery Voltage
2RFIN RFInput
3 VMODE2 Mode Control Voltage 2
4 VMODE1 Mode Control Voltage 1
5 VEN PAEnableVoltage
6CPLOUT CouplerOutput
7 GND Ground
8 CPLIN CouplerInput
9RFOUT RFOutput
10 VCC SupplyVoltage
3Data Sheet - Rev 2.3
03/2012
ALT6708
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
overtheconditionsdenedintheelectricalspecications.
PARAMETER MIN MAX UNIT
SupplyVoltage(V
CC
) 0 +5 V
Battery Voltage (V
BATT
) 0 +6 V
ControlVoltages(V
MODE1
, V
MODE2
, V
EN
) 0 +3.5 V
RFInputPower(P
IN
) - +10 dBm
StorageTemperature(T
STG
)-40 +150 °C
Notes:
(1) For operation at 3.1 V, POUT is derated by 0.8 dB.
(2) LTE waveform characteristics: up to 15MHz, QPSK, RB = 16.
(3) For Operation at +105 °C, POUT is derated by 1.0 dB.
PARAMETERMINTYPMAXUNIT COMMENTS
Operating Frequency (f)880 -915 MHz
Supply Voltage (V
CC
)+3.1+3.4+4.35 VP
OUT
< +28.8 dBm
Enable Voltage (V
EN
)+1.35
0
+1.8
-
+3.1
+0.5 VPA "on"
PA "shut down"
Mode Control Voltage (V
MODE1
,V
MODE2
)+1.35
0
+1.8
-
+3.1
+0.5 VLow Bias Mode
High Bias Mode
WCDMA/UMTS Output Power
R99 WCDMA, HPM
HSPA (MPR=0), HPM
LTE
R99 WCDMA, MPM
LTE & HSPA (MPR=0), MPM
R99 WCDMA, LPM
LTE & HSPA (MPR=0), LPM
28.0
26.9
26.9
-
-
-
28.8
27.7
27.7
17.0
16.0
7.5
6.5
-
-
-
-
-
-
dBm
3GPP TS 34.121-1, Rel 8
Ta ble C.11.1.3,
SUBTEST 1
TS 36.101 Rel 8 for LTE
Case Te mperature (T
C
)-40 -+90 °C
(1, 3)
(2)
(2)
(2)
4Data Sheet - Rev 2.3
03/2012
ALT6708
Notes:
(1) ACLR and Efciency measured at 897.5 MHz.
Table4:ElectricalSpecications-LTEOperation(RB=12,START=0,QPSK)
(TC=+25°C,VBATT=VCC=+3.4V,VEN =+1.8V,50Ω system)
PARAMETER MIN TYP MAX UNIT
COMMENTS
P
OUT
V
MODE1
V
MODE2
Gain
25
14
9
27.5
17.5
12.5
31
21
16
dB
P
OUT
= +27.7 dBm
P
OUT
=+16dBm
P
OUT
=+6.5dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
ACLR E-UTRA
at 10MHzoffset
-
-
-
-39
-39
-40
-35
-35
-35
dBc
P
OUT
= +27.7 dBm
P
OUT
=+16dBm
P
OUT
=+6.5dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
ACLR UTRA
at 7.5MHzoffset
-
-
-
-39
-40
-40
-37
-37
-37
dBc
P
OUT
= +27.7 dBm
P
OUT
=+16dBm
P
OUT
=+6.5dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
ACLR UTRA
at 12.5MHzoffset
-
-
-
-59
-60
-60
-40
-40
-40
dBc
P
OUT
= +27.7 dBm
P
OUT
=+16dBm
P
OUT
=+6.5dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
Power-AddedEfficiency
31
18
12
35
22
17
-
-
-
%
P
OUT
= +27.7 dBm
P
OUT
=+16dBm
P
OUT
=+6.5dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
QuiescentCurrent(Icq)
LowBiasMode -2.8 4.5 mA throughV
CC
pin 1.8 V 1.8 V
ModeControlCurrent -0.06 0.15 mA throughV
MODE
pins,V
MODE1,2
= +1.8 V
EnableCurrent -0.03 0.1 mA throughV
EN
pin, V
EN
= +1.8 V
BATTCurrent -0.8 1.5 mA throughV
BATT
pin, V
MODE1,2
= +1.8 V
LeakageCurrent -<5 10 AV
BATT
= V
CC
= +4.35 V,
V
EN
= 0 V, V
MODE1,2
= 0 V
NoiseinReceiveBand --133 -dBm/Hz 925MHzto960MHz
Harmonics
2fo
3fo, 4fo
-
-
-50
-58
-35
-45 dBc P
OUT
+27.7 dBm
InputImpedance - - 2:1 VSWR
CouplingFactor -20 -dB
Directivity -20 -dB
CouplerIN_OUT
DaisyChainInsertionLoss -0.35 -dB 698MHzto2620MHz
Pin6-8,ShutdownMode
SpuriousOutputLevel
(allspuriousoutputs) - - -70 dBc
P
OUT
+27.7 dBm
In-bandloadVSWR<5:1
Out-of-bandloadVSWR<10:1
Appliesoveralloperatingconditions
Loadmismatchstresswithno
permanentdegradationorfailure 8:1 - - VSWR Appliesoverfulloperatingrange
5Data Sheet - Rev 2.3
03/2012
ALT6708
Table5:ElectricalSpecications-WCDMAOperation(R99Modulation)
(TC=+25°C,VCC=+3.4V,VBATT=+3.4V,VEN =+1.8V,50Ω system)
Notes:
(1) ACLR and Efciency measured at 897.5 MHz.
PARAMETER MIN TYP MAX UNIT
COMMENTS
POUT VMODE1 VMODE2
Gain
25
14
9
27.5
17.5
12.5
31
21
16
dB
POUT = +28.8 dBm
POUT = +17 dBm
POUT = +7.5 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
ACLR1at5MHzoffset
(1)
-
-
-
-41
-42
-41
-37
-37
-37
dBc
POUT = +28.8 dBm
POUT = +17 dBm
POUT = +7.5 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
ACLR2at10MHzoffset
-
-
-
-55
-57
-59
-48
-48
-48
dBc
POUT = +28.8 dBm
POUT = +17 dBm
POUT = +7.5 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
Power-AddedEfficiency
(1)
36
22
-
13
-
40
26
17
18
10
-
-
-
-
-
%
POUT = +28.8 dBm
POUT = +17 dBm
POUT = +13.5 dBm
POUT = +7.5 dBm
POUT = +3.5 dBm
0 V
1.8 V
1.8 V
1.8 V
1.8 V
0 V
0 V
0 V
1.8 V
1.8 V
SpuriousOutputLevel
(allspuriousoutputs) - - <-70 dBc
POUT +28.8 dBm
In-bandlandVSWR<5:1
Out-of-bandloadVSWR<10:1
Appliesoveralloperatingranges
Loadmismatchstresswithno
permanentdegradationorfailure 8:1 - - VSWR Appliesoverfulloperatingrange
6Data Sheet - Rev 2.3
03/2012
ALT6708
PERFORMANCE DATA PLOTS:
(WCDMAOperationat897.5MHzand50V system)
Figure4:WCDMAGain(dB)overTemperature
(VBATT=VCC=+3.4V)
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
Gain(dB)
Pout (dBm)
Figure4:WCDMAGain(dB)overTemperature
(Vbatt=VCC=3.4V)
-30C 3.4Vcc
25C 3.4Vcc
90C 3.4Vcc
0
5
10
15
20
25
30
0 5 10 15 20 25 30
Gain(dB)
Pout (dBm)
Figure5:WCDMAGain(dB)overVoltage
(Tc=25C)
25C 3.2Vcc
25C 3.4Vcc
25C 4.35Vcc
Figure5:WCDMAGain(dB)overVoltage
(TC=258C)
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
Efficiency (%)
Pout (dBm)
-30 3.4cc
25C 3.4Vcc
90C 3.4Vcc
Figure6:WCDMAPAE(%)overTemperature
(VBATT=VCC=+3.4V)
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
Efficiency
Pout (dBm)
Figure7:WCDMAPAE(%)overVoltage
(Tc=25C)
25C 3.2Vcc
25C 3.4Vcc
25C 4.35Vcc
Figure7:WCDMAPAE(%)overVoltage
(TC=258C)
Figure8:WCDMAACLR1(dBc)overTemperature
(VBATT=VCC=+3.4V)
-60
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30
ACLR1(5MHzdBc)
Pout (dBm)
Figure8:WCDMAACRL1(dBc)overTemperature
(Vbatt=VCC=3.4V)
-30C 3.4Vcc
25C 3.4Vcc
90C 3.4Vcc
Figure9:WCDMAACLR1(dBc)overVoltage
(TC=258C)
-60
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30
ACLR1(5MHzdBc)
Pout (dBm)
Figure9:WCDMAACLR1(dBc)overVoltage
(Tc=25C)
25C 3.2Vcc
25C 3.4Vcc
25C 4.35Vcc
7Data Sheet - Rev 2.3
03/2012
ALT6708
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on theANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
Thepowerampliermaybeplacedinashutdownmode
byapplying logiclow levels(see OperatingRanges
table)totheVEN, VMODE1 and VMODE2 voltages.
Bias Modes
The power amplier may be placed in either Low,
Medium or High Bias modes by applying the
appropriatelogiclevel(seeOperatingRangestable)
Table 6: Bias Control
to the VMODEvoltages.TheBias Control tablebelow
liststherecommendedmodesofoperationforvarious
applications.
Threeoperatingmodesarerecommendedtooptimize
currentconsumption.HighBias/HighPoweroperating
modeisforPOUTlevels>16dBm.At~17dBm-6.5
dBm,thePAshouldbe“ModeSwitched”toMedium
Power Mode. For POUT levels < ~7.5 dBm, the PA
canbeswitchedtoLowPowerModeforevenlower
quiescentcurrentconsumption.
Figure 10: Evaluation Board Schematic
C3
330 pF
C4
2.2 µF ceramic
RFIN
1
6
7
10
8
5
4
3
VBATT
VMODE1
RFOUTRFIN
GND
VCC
VEN CPLOUT
VCC
C1
0.01 µF
VBATT
VMODE1
VEN
CPLIN
VMODE2
29
VMODE2
C5
2.2 µF
C2
0.01 µF
GND at slug
CPLIN
CPLOUT
RFOUT
C9
100 pF
APPLICATION P
OUT
LEVELS
BIAS
MODE V
EN
V
MODE1
V
MODE2
v
cc
V
B AT T
Lowpower
(LowBiasMode) +7.5 dBm Low +1.8 V +1.8 V +1.8 V 3.1 - 4.35 V > 3.1 V
Medpower
(MediumBiasMode)
>+6.5dBm
+17 dBm Low +1.8 V +1.8 V 0 V 3.1 - 4.35 V > 3.1 V
Highpower
(HighBiasMode) >+16dBm High +1.8 V 0 V 0 V 3.1 - 4.35 V > 3.1 V
Shutdown -Shutdown 0 V 0 V 0 V 3.1 - 4.35 V > 3.1 V
8Data Sheet - Rev 2.3
03/2012
ALT6708
Figure 11: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Figure12:BrandingSpecication-M45Package
PACKAGEOUTLINE
6708R
LLLLNN
YYWWCC
Pin 1 Identifier
Country Code(CC)
Part Number
Date Code (YYWW)
Lot Number
9Data Sheet - Rev 2.3
03/2012
ALT6708
PCBANDSTENCILDESIGNGUIDELINE
Figure 13: Recommended PCB Layout Information
10 Data Sheet - Rev 2.3
03/2012
ALT6708
COMPONENTPACKAGING
Figure 14: Carrier Tape
Pin 1
Figure 15: Reel
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
Data Sheet - Rev 2.3
03/2012
11
ALT6708
ORDERINGINFORMATION
ORDER NUMBER TEMPERAT URE
RANGE
PACKAGE
DESCRIPTIONCOMPONENT PACKAGING
ALT6708RM45Q7-40 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
ALT6708RM45P9-40 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm
Surface Mount Module
Partial Tape and Reel