BAS29 BAS29 Connection Diagram 3 3 3 L20 2 1 2 1 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF(AV) Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A C TJ Operating Junction Temperature 150 C Value Units *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter PD Power Dissipation 350 mW RJA Thermal Resistance, Junction to Ambient 357 C/W Electrical Characteristics Symbol Parameter VR Breakdown Voltage VF* Forward Voltage IR* Reverse Current CT Total Capacitance trr Reverse Recovery Time TA = 25C unless otherwise noted Test Conditions IR = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA VR = 90 V VR = 90 V, TA = 150C VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Min Max Units V 120 0.75 0.84 0.90 1.00 1.25 100 100 2.0 V V V V V nA A pF 50 ns *Pulse test : Pulse width=300us, Duty Cycle=2% 2002 Fairchild Semiconductor Corporation BAS29, Rev. A