Crystal oscillator Epson Toyocom Product Number (please contact us) EG-2121CA: Q3805CAx0xxxx00 EG-2102CA: Q3806CA00xxxx00 CRYSTAL OSCILLATOR LOW-JITTER SAW OSCILLATOR EG - 2121 / 2102CA series *Frequency range *Supply voltage : 53.125 MHz to 700 MHz : 2.5 V (EG-2121CA) : 3.3 V (EG-2102CA) *Output : Differential LV-PECL or LVDS *Function : Output enable(OE) *External dimensions : 7.0 x 5.0 x 1.2 t (mm) Typ. *Very low jitter and low phase noise by SAW unit. Actual size EG-2121CA EG-2102CA Specifications (characteristics) VCC T_stg T_use EG-2121CA EG-2102CA EG-2121CA EG-2102CA Differential LV-PECL LVDS 53.125 MHz to 100 MHz to 53.125 MHz to 700 MHz 500 MHz 700 MHz 2.5 V 0.125 V 3.3 V 0.3 V 2.5 V 0.125 V 3.3 V 0.3 V -40 C to +100 C P:0 C to +70 C ,R:-5 C to +85 C ,S:-20 C to +70 C Frequency tolerance f_tol G: 50 x 10-6 ,H: 100 x 10-6 Current consumption Disable current Symmetry ICC I_dis SYM 80 mA Max. 100 mA Max. 30 mA Max 45 mA Max. 20 mA Max. 32 mA Max 20 mA Max 30 mA Max. P:45 % to 55 % P:45 % to 55 % L:45 % to 55 % L:45 % to 55 % 1.55 V Typ. 2.35 V Typ. VCC-1.025 V to VCC-0.88 V 0.8 V Typ. 1.6 V Typ. VCC-1.81 V to VCC-1.62 V 350 mV Typ. 247 mV to 454 mV 50 mV 1.25 V Typ. 1.125 V to 1.375 V 150 mV Item Symbol f0 Output frequency range Supply voltage Temperature range Storage temperature Operating temperature VOH VOL Output voltage VOD VOD VOS VOS 50 100 Output load condition RL Output enable input voltage Output disable input voltage VIH VIL 70 % VCC Min. 30 % VCC Max. Rise time / Fall time tr / tf 400 ps Max. Start-up time t_str 10 ms Max. 0.2 ps Typ. 3 ps Typ. 3 ps Typ. 25 ps Typ. 4 ps Typ. 0.05 x 10-3 UI Typ. 1 ps Max. 10 x 10-6 / year Max. Jitter *2 tDJ tRJ tRMS Phase Jitter tacc tPJ tp-p Symmetry P:Differential LV-PECL All range EG-2121CA EG-2102CA Details of frequency tolerance HP: 100 x 10-6(0C to +70C) HR: 100 x 10-6(-5C to +85C) Frequency tolerance GP: 50 x 10-6(0C to +70C) GR: 50 x 10-6(-5C to +85C) 50 10 %(f0 > 350 MHz) 50 5 %(f0 350 MHz) 50 5 % A *4 N *5 PHPA PHPN PHRA*6 PHRN*6 PGPA*6 PGPN*6 PGRN*6 Please contact us for inquiries about S spec. P:0 C to +70 C,R:-5 C to +85 C *1 ,S:-20 C to +70 C OE=VCC,RL=50 or 100 OE=GND f0350 MHz (at outputs crossing point) *1 DC characteristics Differential output, DC characteristics Output change, DC characteristics Offset, DC characteristics Offset change, DC characteristics LV-PECL: Terminated to VCC -2.0 V LVDS: Connected between OUT to OUT Offset frequency: 12 kHz to 20 MHz +25 C,First year,VCC=2.5 V,3.3 V D: Differential LV-PECL f0 175 MHz f0 350 MHz 50 2 % A *4 DHPA DHRA*6 DGPA*6 - Store as bare product after unpacking OE terminal OE terminal Between 20% VCC and80%of (VOH-VOL) Between 20 %and 80 %of Differential Output peek to peek voltage Time at minimum supply voltage to be 0 s Deterministic Jitter Random Jitter (RMS of total distribution) Peak to Peak Accumulated Jitter() n=2 to 50000 cycles Frequency aging *3 f_aging *1 As per below table. *2 Based on DTS-2075 Digital timing system made from WAVECREST with jitter analysis software VISI6. *3 Except: ***A Output mode Frequency EG-2121CA range EG-2102CA Remarks Please contact us for inquiries regarding available frequencies. N *5 DHPN DHRN*6 DGPN*6 DGRN*6 L:LVDS V:LVDS All range f0 175 MHz 50 10 %(f0 > 350 MHz) 50 5 %(f0 350 MHz) A *4 LHPA LHRA*6 LGPA*6 - N *5 LHPN LHRN*6 LGPN*6 LGRN*6 50 2 % A *4 VHPA VHRA*6 VGPA*6 - N *5 VHPN VHRN*6 VGPN*6 VGRN*6 *4 This includes initial frequency tolerance, temperature variation, supply voltage variation, reflow drift, and aging(+25 C,10 years). *5 This includes initial frequency tolerance, temperature variation, supply voltage variation, and reflow drift(except aging). *6 53.125 MHz f0 < 100 MHz : Unavailable. (Unit:mm) External dimensions #2 7.0 0.2 #3 #3 2.54 #2 #1 Pin map Pin Connection 1 2 3 4 5 6 OE N.C. GND OUT 1.2 1.5 #6 3.9 #5 OUT VCC 5.08 0.2 #1 #4 1.1 #4 2.6 #5 5.00.2 #6 E EG-2121 250.000P GPA 282A (Unit:mm) Footprint (Recommended) 1.6 1.4 2.54 #3 is connected to the cover. 5.08 http://www.epsontoyocom.co.jp 5.08 To maintain stable operation, provide by-pass capacitor with more than 0.1 F at a location as near as possible to the power source terminal of the crystal products (between VCC - GND).