ES3A thru ES3J
SMC
All Dimensions in millimeter
SMC
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
6.60 7.11
6.22 5.59
2.92 3.18
0.31 0.15
7.75 8.13
0.05 0.20
2.01 2.50
0.76 1.52
C
H
E
F
G
D
B
A
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.007 ounces, 0.21 grams
NOTES : 1. Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance junction to Lead and Ambient.
SURFACE MOUNT
SUPER FAST RECTIFIERS
REVERSE VOLTAGE -
50
to
400
Volts
FORWARD CURRENT -
3.0
Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
SEMICONDUCTOR
LITE-ON
REV. 6, Mar-2012, KSGC01
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
3.0
100
0.92
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 2)
UNIT
CHARACTERISTICS SYMBOL
@TL =110 C
ES3A
Maximum Reverse Recovery Time (Note 1)
@TJ =25
℃
@TJ=125
℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
C
J
R
θ JL
R
θ JL
50
35
50
ES3B
100
70
100
ES3C
150
105
150
ES3D
200
140
200
ES3G
400
280
400
ES3J
600
420
600
V
V
V
1.25 1.30
A
A
V
uA
ns
pF
C/W
10
500
25
20 (Typ.)
45
10
Operating Temperature Range T
J
℃
-55 to + 150
Storage Temperature Range T
STG
-55 to + 150
35
30 (Typ.)
15
R
θ JA
50
Peak Forward Surge Current
1ms single half sine-wave 200
I
FSM
A
41.5
I t
2
I t Rating for fusing (3ms t 8.3ms)
≦ ≦
2
A S
2
@Tj=25
℃
C/W
℃