SKM 800GA176D 3& 2 Absolute Maximum Ratings Symbol Conditions IGBT 4 3& 2 # 4 1&) 2 #9: #9:3"# Units 1')) 3& 2 67) $ 6) 2 &8) $ 13)) $ < 3) 1) ? 3& 2 !7) $ 6) 2 AA) $ 13)) $ 7!)) $ &)) $ ( A) ,,, B 1&) 2 ( A) ,,, B 13& 2 A))) 13)) = ; 0 3) = 4 13& 2 % Values ; SEMITRANS(R) 4 > 1')) Inverse Diode Trench IGBT Modules #@ SKM 800GA176D 4 1&) 2 #@9: #@9:3"#@ #@ 1) = , : 4 1&) 2 Module #+9: - 4 Features ! " # Typical Applications* $ % &'& ( 1)) 2 $ 1 , 3& 2 Characteristics Symbol Conditions IGBT ;+- ; # 3A $ # ; ) ) '&) $ * + " ,. % Remarks #/ 0 &)) $ % + ; 1& - # max. Units &3 &6 !A A $ 4 3& 2 1 13 4 13& 2 )8 11 4 3&2 1' 31 C 4 13&2 3& 4 3& 2 1 :D E; %+ %+ ; (6,,,B1& 9; 7 C 9; 7 C 9+4(- #;G % typ. !)) $ ; 1& 4 3&2 3& ; ) min. , 4 13&2 13)) # !))$ 4 13& 2 ; < 1& , C 3 3 A& 3 A& 38 78 ! 33 @ @ 3& @ A6)) 37) 8) 77& 1)7) 1!) F 3A& F ) )A HI. GA 1 28-06-2010 GIL http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA176D Characteristics Symbol Conditions Inverse Diode @ #@ !)) $= ; ) min. 4 3& 2 , 4 13& 2 SEMITRANS(R) 4 Trench IGBT Modules 1! , @ 4 3& 2 ) 67 1 C 4 13& 2 !&) 37) $ ? 1&& F #99: E #@ !)) $ %I% !A)) $I? ; (1& = 13)) 9+4(-/ %% ) )' HI. Module Features 1& , ( - L :! : :! +:A- '&) $ * + " ,. % ) 16 C 13& 2 ) 33 C % : 3) 3& 2 ) )76 HI. 7 & M 3 & +1 1- & +3- M 77) This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* $ % &'& ( 1)) 2 Remarks #/ 0 &)) $ % 18 17 9+( ! " # 1! 11 SKM 800GA176D Units 4 3& 2 9KBK max. @) J typ. GA 2 28-06-2010 GIL http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA176D Zth Symbol Zth(j-c)l 9 9 9 9 (R) SEMITRANS 4 Conditions Values Units 36 8& 3 1' ) 77 ) )AA' ) )3 ) ))1& LI. LI. LI. LI. 1 3 7 A 1 3 7 A ) ))3& 1 3 7 A 1 3 7 A! 1' &8 11 ) )& ) ))'& ) ))3 A ) )))3 Zth(j-c)D 9 9 9 9 Trench IGBT Modules SKM 800GA176D LI. LI. LI. LI. Features ! " # Typical Applications* $ % &'& ( '&) $ * + " ,. % Remarks #/ 0 &)) $ % 1)) 2 GA 3 28-06-2010 GIL http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA176D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 28-06-2010 GIL http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA176D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 Typ. CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 28-06-2010 GIL http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA176D UL Recognized ;$ 6 File no. E 63 532 / &8 / &8 28-06-2010 GIL http://store.iiic.cc/ (c) by SEMIKRON