5SDA 09D2604
TS - DA/043/00b Sep-11 1 of 4
5SDA 09D2604
Old part no. DA 807-880-26
Avalanche Diode
Properties
Key Parameters
low on-state voltage
VRRM
=
2 600
V
avalanche reverse characteristics
IFAVm
=
1 020
A
high operational reliability
IFSM
=
11 500
A
suitable for parallel operation
VTO
=
0.870
V
rT
=
0.390
m
Types
VRRM
5SDA 09D2604
5SDA 09D2304
2 600 V
2 300 V
Conditions:
Tj = -40 ÷ 160 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm
Mounting force
11 ± 1
kN
m
Weight
0.23
kg
DS
Surface creepage
distance
30
mm
Da
Air strike distance
20.5
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SDA 09D2604
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DA/043/00b Sep-11 2 of 4
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 09D2604
5SDA 09D2304
2 600
2 300
V
IFAVm
Average forward current
Tc = 85 °C
1 020
A
IFRMS
RMS forward current
Tc = 85 °C
1 600
A
IRRM
Repetitive reverse current
VR = VRRM
50
mA
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 8.3 ms
12 300
A
tp = 10 ms
11 500
A
I2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 8.3 ms
630 000
A2s
tp = 10 ms
661 000
A2s
PRSM
Maximum avalanche power dissipation
rectangular pulse 20 µs
50
kW
Tjmin -Tjmax
Operating temperature range
-40 ÷ 160
°C
TSTG
Storage temperature range
-40 ÷ 160
°C
Unless otherwise specified Tj = 160 °C
Characteristics
Value
Unit
min
typ
max
VT0
Threshold voltage
0.870
V
rT
Forward slope resistance
IF = 1000 ÷ 3000 A
0.390
m
VFM
Maximum forward voltage
IFM = 1 800 A, Tj = 25 °C
1.350
1.500
V
Qrr
Recovered charge
VR = 100 V, IFM = 1 000 A, diF/dt = -5 A/
s
810
µC
Unless otherwise specified Tj = 160 °C
Thermal Parameters
Value
Unit
Rthjc
Thermal resistance
junction to case
double side cooling
40
K/kW
anode side cooling
65
cathode side cooling
104
Rthch
Thermal resistance
case to heatsink
double side cooling
10
K/kW
single side cooling
20
5SDA 09D2604
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DA/043/00b Sep-11 3 of 4
Transient Thermal Impedance
Analytical function for transient
thermal impedance
4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 11 ± 1 kN, Double side cooled
i
1
2
3
4
Ri( K/kW )
20.95
10.57
7.15
1.33
i ( s )
0.396
0.072
0.009
0.0044
0
5
10
15
20
25
30
35
40
45
0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Transient thermal impedance
junction to case Zthjc ( K/kW )
Fig. 2
Transient thermal impedance junction to case
0
1000
2000
3000
4000
5000
6000
7000
0 1 2 3 4
VF ( V )
IF ( A )
160 °C
Tj = 25 °C
Fig. 3
Maximum forward voltage drop
characteristics
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
5SDA 09D2604
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DA/043/00b Sep-11 4 of 4
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0200 400 600 800 1000 1200
IFAV ( A )
PT ( W )
120°
180°
DC
y
= 60°
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0200 400 600 800 1000 1200
IFAV ( A )
PT ( W )
y
= 30°
60°
90°
120°
180°
270°
DC
Fig. 5
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 6
Forward power loss vs. average forward
current, square waveform, f = 50 Hz,
T = 1/f
60
70
80
90
100
110
120
130
140
150
160
170
0200 400 600 800 1000 1200
IFAV ( A )
TC ( °C )
180°
120°
DC
y
= 60°
60
70
80
90
100
110
120
130
140
150
160
170
0200 400 600 800 1000 1200
IFAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
y
= 30°
Fig. 7
Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz,
T = 1/f
Fig. 8
Max.case temperature vs. aver. forward
current, square waveform, f = 50 Hz,
T = 1/f
Notes:
