BY296...BY299 FAST SILICON RECTIFIERS FEATURES * Low forward voitage * High current capability * Low leakage current * High surge capability * Low cost Absolute Maximum Ratings (T,= 25 C) = 25.4 Cathode MIN 140.02 > } VOLTAGE RANCE 100 to 800 Volts CURRENT 2.0 Amperes Dimensions in mm Symbol Value Unit Repetitive Peak Reverse Voltage BY296 Vern 100 V BY297 Vea 200 V BY298 Vern 400 V BY299 Vera 800 V Nominal Current at Halfe Wave Rectificatin leay 2" A with Resistive Load at T,_, = 50 C Surge Forward Current, Half Cycle 50Hz, starting from T, = 25 C lem 70 A Repetitive Peak Forward Current, < 40 , f >15Hz, T,,, = 25 C lean 10 A Junction Temperature T, 150 C Ambient Operating Temperature Range amb -40 + 150 C Strage Temperature Range T; -40 + 150 C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) HGSBY296...BY299 FAST SILICON RECTIFIERS Characteristics Symbol Min. Typ. Max. Unit Forward Voltage Vv, - - 1.3 V atl, =3A,T,=25 C Leakage Current I, - - 10 UA at Very 1, = 25 C Forward Recovery Time t, - - 1 us at |, = 100 mA Reverse Recovery Time t - - 0.5 Ms from |. = 10 mA through I, = 10 mA tol, = 1mA Thermal Resistance R - - 35 K/W Junction to Ambient Air 1 Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )