Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386 Features * Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 1.8 GHz * 26 dB Typical Gain at 1.5 GHz * 10 dBm Typical P1dB at 1.5 GHz * Unconditionally Stable (k>1) * Surface Mount Plastic Package Description The INA-10386 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and moderate power. The INA series of MMICs is fabricated using Agilent's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. Typical Biasing Configuration VCC Id = 45 mA nom. RFC (Optional) Rbias 4 Cblock RF IN Cblock 3 1 2 RF OUT Vd = 6.0 V 86 Plastic Package 2 INA-10386 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 80 mA 750 mW +13 dBm 150C -65 to 150C Thermal Resistance: jc = 100C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 10 mW/C for TC > 75C. INA-10386 Electrical Specifications[1], TA = 25C Symbol Parameters and Test Conditions: Vd = 6V, ZO = 50 GP Power Gain (|S21| 2) f = 1.5 GHz GP Gain Flatness f = 0.1 to 1.5 GHz f3 dB 3 dB Bandwidth[2] ISO VSWR Reverse Isolation (|S12 | 2) f = 2.0 GHz Input VSWR Units Min. Typ. dB 23.0 26.0 dB 1.0 GHz 1.8 dB Max. 30 f = 0.1 to 2.0 GHz 1.5:1 Output VSWR f = 0.1 to 2.0 GHz NF 50 Noise Figure f = 1.5 GHz 1.5:1 P1 dB Output Power at 1 dB Gain Compression f = 1.5 GHz dBm 10 IP3 Third Order Intercept Point f = 1.5 GHz dBm 23 tD Group Delay f = 1.5 GHz psec Id Device Current dV/dT Device Voltage Temperature Coefficient dB mA mV/C 3.8 250 35 45 55 +10 Notes: 1. The recommended operating current range for this device is 40 to 60 mA. Typical performance as a function of current is on the following page. INA-10386 Part Number Ordering Information Part Number No. of Devices Container INA-10386-TR1 INA-10386-BLK 1000 100 7" Reel Antistatic Bag 3 INA-10386 Typical Scattering Parameters (ZO = 50 , TA = 25C, Vd = 6 V) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.05 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 .12 .11 .13 .17 .21 .21 .19 .14 .07 .08 -9 -17 -79 -137 171 127 106 86 85 148 26.6 26.7 26.7 26.8 26.0 23.6 21.7 19.2 16.8 14.2 21.4 21.6 21.6 21.9 20.0 15.1 12.2 9.1 6.9 5.1 -4 -8 -38 -80 -126 -168 159 127 97 70 -35.2 -35.6 -35.7 -34.1 -33.1 -29.9 -28.4 -26.7 -24.8 -24.7 .017 .017 .016 .020 .023 .032 .038 .048 .058 .058 1 3 10 43 53 55 58 55 50 51 .11 .12 .07 .03 .07 .07 .04 .05 .06 .04 -3 -10 -40 18 32 9 42 56 47 40 1.51 1.50 1.59 1.33 1.26 1.23 1.27 1.37 1.44 1.82 INA-10386 Typical Performance, TA = 25C (unless otherwise noted) 30 60 30 TC = +85C TC = +25C TC = -25C Gain Flat to DC 50 25 0.1 - 1.0 GHz 25 2.0 GHz 20 Gp (dB) Id (mA) Gp (dB) 40 30 20 20 15 15 10 10 0.1 0.2 0.5 1.0 2.0 10 35 0 5.0 0 2 4 6 8 Vd (V) Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Vd = 6 V. Figure 2. Device Current vs. Voltage. 9 NF (dB) 5.0 NF 4.0 4.0 Id = 45 mA NF (dB) 11 P1 dB (dBm) 13 P1 dB (dBm) Gp (dB) 25 Id = 55 mA 15 P1 dB 10 5 3.0 65 4.5 Gp 26 55 Figure 3. Power Gain vs. Current. 20 27 45 Id (mA) FREQUENCY (GHz) Id = 40, 55 mA 3.5 Id = 45, 50 mA 3.0 2.0 -55 -25 +25 +85 +125 TEMPERATURE (C) Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.5 GHz, Vd = 6 V. 0 .02 .05 0.1 0.2 0.5 1.0 2.0 FREQUENCY (GHz) Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. 2.5 .02 .05 0.1 0.2 0.5 1.0 2.0 FREQUENCY (GHz) Figure 6. Noise Figure vs. Frequency. 86 Plastic Package Dimensions 0.51 0.13 (0.020 0.005) 4 white ink dot N10 45 1 C L 3 2.34 0.38 (0.092 0.015) 2 1.52 0.25 (0.060 0.010) 2.67 0.38 (0.105 0.15) 5 TYP. 0.66 0.013 (0.026 0.005) 0.203 0.051 (0.006 0.002) 8 MAX 0 MIN 2.16 0.13 (0.085 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies Obsoletes 5965-9679E 5967-6159E (11/99)