HIGH SPEED SWITCHING DIODE
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
Case: DO-34 Glass Case
Weight: approx. 0.093g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL VALUE UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Reverse Voltage VR75 V
Maximum Average Forward Current IF(AV) 150 1) mA
Maximum Surge Forward Current at t < 1s and Tj = 25°CIFSM 500 mA
Maximum Power Dissipation , Ta = 25 °CPDmW
Maximum Forward Voltage at IF = 10 mA VF1.0 V
Maximum Reverse Current at VR = 20V 25 nA
at VR = 75V 5µA
at VR = 20V, Tj = 150°C 50 µA
Maximum Voltage Rise when switching ON
test with 50mA Pulses
tp = 0.1µs, Rise Time <30ns fp = 5 to 100kHz
Maximum Reverse Recovery Time
from IF = 10mA to IR = 1mA , VR = 6V , RL = 100Ω
Thermal Resistance Junction to Ambient Air RθJA K/W
Junction Temperature Range TJ175 °C
Storage Temperature Range TSTG - 65 to + 175 °C
Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
Page 1 of 2 Rev. 02 : March 25, 2005
V2.5
Trr 4 ns
350 1)
RATING
IR
Vfr
500
DO - 34 Glass
0.078 (2.0 )max.
0.118 (3.0)
max.
0.019 (0.50)max.
Dimensions in inches and ( millimeters )
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark