BC547A - Semiconductor Components Industries

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating Symbol BC546 BC547 BC548 Unit

Collector–Emitter Voltage VCEO 65 45 30 Vdc

Collector–Base Voltage VCBO 80 50 30 Vdc

Emitter–Base V oltage VEBO 6.0 Vdc

Collector Current — Continuous IC100 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD625

5.0 mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD1.5

12 Watt

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RJA 200 °C/W

Thermal Resistance, Junction to Case RJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage BC546

(IC = 1.0 mA, IB = 0) BC547

BC548

V(BR)CEO 65

—

Collector–Base Breakdown Voltage BC546

(IC = 100 µAdc) BC547

BC548

V(BR)CBO 80

—

Emitter–Base Breakdown V oltage BC546

(IE = 10 A, IC = 0) BC547

BC548

V(BR)EBO 6.0

6.0

—

Collector Cutoff Current

(VCE = 70 V, VBE = 0) BC546

(VCE = 50 V, VBE = 0) BC547

(VCE = 35 V, VBE = 0) BC548

(VCE = 30 V, TA = 125°C) BC546/547/548

ICES —

—

0.2

—

4.0

µA

 Semiconductor Components Industries, LLC, 2001

February, 2001 – Rev. 2 1Publication Order Number:

BC546/D

BC546, B

BC547, A, B, C

BC548, A, B, C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

123

COLLECTOR

BASE

EMITTER

BC546, B BC547, A, B, C BC548, A, B, C

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 10 µA, VCE = 5.0 V) BC547A/548A

BC546B/547B/548B

BC548C

(IC = 2.0 mA, VCE = 5.0 V) BC546

BC547

BC548

BC547A/548A

BC546B/547B/548B

BC547C/BC548C

(IC = 100 mA, VCE = 5.0 V) BC547A/548A

BC546B/547B/548B

BC548C

hFE —

—

110

200

420

—

150

270

—

180

290

520

120

180

300

—

450

800

220

450

800

—

Collector–Emitter Saturation Voltage

(IC = 10 mA, IB = 0.5 mA)

(IC = 100 mA, IB = 5.0 mA)

(IC = 10 mA, IB = See Note 1)

VCE(sat) —

—

0.09

0.2

0.3

0.25

0.6

Base–Emitter Saturation Voltage

(IC = 10 mA, IB = 0.5 mA) VBE(sat) — 0.7 — V

Base–Emitter On Voltage

(IC = 2.0 mA, VCE = 5.0 V)

(IC = 10 mA, VCE = 5.0 V)

VBE(on) 0.55

——

—0.7

0.77

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546

BC547

BC548

fT150

150

300

—

MHz

Output Capacitance

(VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo — 1.7 4.5 pF

Input Capacitance

(VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo — 10 — pF

Small–Signal Current Gain

(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546

BC547/548

BC547A/548A

BC546B/547B/548B

BC547C/548C

hfe 125

125

240

450

—

220

330

600

500

900

260

500

900

—

Noise Figure

(IC = 0.2 mA, VCE = 5.0 V, RS = 2 k, BC546

f = 1.0 kHz, ∆f = 200 Hz) BC547

BC548

NF —

—

2.0

Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.

BC546, B BC547, A, B, C BC548, A, B, C

http://onsemi.com

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

0.2 0.5 1.0 10 20 50

0.2 100

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

2.0 5.0 200

0.6

0.7

0.8

0.9

1.0

0.5

0.2

0.4

0.1

0.3

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02 1.0 10

020

0.1

0.4

0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.8

0.6

0.4

0.3

0.2 0.5 1.0 10 20 50

2.0 10070

307.05.03.00.70.30.1

0.2 1.0 10 100

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE = 10 V

TA = 25°C

-55°C to +125°CTA = 25°C

IC = 50 mA IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

BC547/BC548

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4 0.6 1.0 10 20

1.0 2.0 6.0 40

100

200

300

400

7.0

5.0

3.0

2.0

0.7 1.0 10 202.0 50

307.05.03.00.5

VCE = 10 V

TA = 25°C

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

0.8 4.0 8.0

TA = 25°C

Cob

Cib

BC546, B BC547, A, B, C BC548, A, B, C

http://onsemi.com

BC547/BC548

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

0.8

1.0

0.6

0.2

0.4

1.0

2.0

0.1 1.0 10 100

0.2

0.5

0.2 1.0 10 200

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

1.2

1.6

2.0

0.02 1.0 10

020

0.1

0.4

0.8

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

0.2 2.0 10 200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

hFE, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOLTS)

VCE = 5 V

TA = 25°C

00.5 2.0 5.0 20 50 100

0.05 0.2 0.5 2.0 5.0

100 mA

20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

0.5 5.0 20 50 100

-55°C to 125°C

θVB for VBE

BC546

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.1 0.2 1.0 50

2.0 2.0 10 100

100

200

500

6.0

4.0

1.0 10 50 100

5.0

VCE = 5 V

TA = 25°C

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT

0.5 5.0 20

TA = 25°C

Cob

Cib

BC546, B BC547, A, B, C BC548, A, B, C

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

HSECTION X–X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.022 0.41 0.55

F0.016 0.019 0.41 0.48

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

CASE 029–04

(TO–226AA)

ISSUE AD

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

BC546, B BC547, A, B, C BC548, A, B, C

http://onsemi.com

Notes

BC546, B BC547, A, B, C BC548, A, B, C

http://onsemi.com

Notes

BC546, B BC547, A, B, C BC548, A, B, C

http://onsemi.com

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BC546/D

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