3875081 G E SOLID sTaTe Ul DE fj 287sca1 O017254 7 iE 7-33-29 Darlington Power Transistors 2N6055, 2N6056 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types With Gain of 750 at 4 Amperes Features: Operation from IC without predriver @ Low leakage at high temperature Applications: @ Power switching Audio amplifiers Series and shunt regulators @ Hammer drivers The RCA-2N6055 and 2N6056 are monolithic n-p-n sil- icon Darlington transistors designed for low- and medium- frequency power applications. The construction of these devices provides good forward-bias second-breakdown capability. Their high gain makes it possible for them to be driven directly from integrated circuits. These devices are supplied in the JEDEC TO-204AA (VERSAWATT) plastic package. MAXIMUM RATINGS, Absolute-Maximum Values: *VcBO - VcER (sus) Ree = 100.2 *VCEO - Vcev(sus) VBpE=-15V . * VEBO lc. IcM . *Ig. *PT Tce < 25C . Te > 25C . * Tstg. Tj. *TL At distances 2 1/32 in. (0.8 mm) from seating plane for 10s max. . * {n accordance with JEDEC registration format JS-6 RDF-2. File Number 563 TERMINAL DESIGNATIONS c (FLANGE) 32cs- 27516 JEDEC TO-204AA 9205+199 GAL Fig.1 Schematic diagram of 2N6055 and 2NGQ56 Darlington power transistors. 2N6055 2N6056 60 80 Vv 60 80 Vv 60 80 Vv 60 80 Vv 5 5 v 8 8 A 16 16 A 120 120 mA 100 100 Ww See Figs. 2 and 4 65 to +200 235 C 236 0776 G-Ol3s75081 G & soLID state DE Pp 3875081 oo17235 4 LT. 17-33-29 Darlington Power Transistors 2N6055, 2N6056 ELECTRICAL CHARACTERISTICS, At Case Temperature (T}= 25C Unless Otherwise Specified c. TEST CONDITIONS LIMITS oc pc CHARACTERISTIC VOLTAGE CURRENT 2N6055 2N6056 UNITS SYMBOL Vv A Vcel Vest VBE! 'c {te | tp [MIN.| MAX. |MIN.| MAX. CEO 40 0 ~ {Le fos 60 -1.5 _ 0.5 = - ICEX 80 -1.5 ~| - {-|o5 | ICEX 60 1.5 - 5 - _ Tc = 150C 80 -1.5 - - |- 5 *llEBO 5 0 - 2 - 2 mA ah 3 ga too} |froo} FE 3 4a 750 | 18,000] 750 | 18,000 Vceolsus) 0,14 60a - 804 - VcER(sus) _ Ree = 1002 0.18 608 _ 80a Vv VcEx(sus} 1.5] 0.18 60a} | saat 4a 0.016) 2 - 2 #IVcE(sat) ga 0.08 | 3 = 3 *VeE 3 4a -~ | 28 [- | 28 VBE(sat) ga 0.08; 4 4 . Ihfel 3 3 4 - 4 - f=1MHz *ICobo f = 0.1 MHz, 0 - 200 - 200 pF Vcp = 10V *lNfe f=1kHz 3 3 300 ~ 300 - I Sib 33.3 3] - |3] - t=1s, 40 _ _ 2 - A non rep. Rac | 1.75) | 1.75 | CAW * In accordance with JEDEG registration data format JS-6 RDF-2. @ Pulsed: Pulse duration = 300 ys, duty factor = 2%. rt 237 0777 G-023875081 G E SOLID STATE 1 DE Bp 3475081 017234 O iy T3329 Darlington Power Transistors 2N6055, 2N6056 DO NOT DERATE THE SPECIFIED Max. AT SPECIFIED VOLTAGE, = 25C OR PERCENTAGE OF RATED 5 E 5 a i 5 Ww i 5 2 z Te CURRENT a 1 10 100 COLLECTOR GURRENT(I)A pace: z070082 CASE TEMPERATURE ite) szes-943 Fig.2 Derating curve for both types. Fig.3 Typical de beta characteristics for both types. g| CASE TEMPERATURE (Teh sec MUST BE DERAT! | CURES LY UST re ReReASE IN TEMPERATURE) 4 > 1 J Eee ane tu: o 2 Ip (MAX.) PULSED 216 < w CHE tit pepe rp io A < {O-EeI (MAX.) CONTINUOUS cS 8 6 + a eo OC OPERATION: oe DISSIPATION ~LIM Ey 33 = w i I t * FOR SINGLE = ms NONREPETITIVE Stet x PULSE 4 : elt - oe d Glog wh ; Tg), LIMITED 3 ray oa eee SEE E VEO (MAX) 60 V (2N6055) 2 z 2e VcEotMAX)= 60 V (2N60S6 o.l 2 @ 6 B1Ofes 2 4 6 By 2 4 68 {COLLECTOR CURRENT (Zc) A 9203-20348 Rt Fig.4 Maximum operating areas for types 2N6055 and 2N6056. 238 _ 0778 G~-03chee rin 3875081 G E SOLID STATE Ol De fp aa7sc81 oo017237 2 ] T3327 0779 SMALL~GIGNAL CURRENT GAIN {hyq! COLLECTOR CURRENT iT)a CURRENT (Teh 1A COLLECTOR-TO-EMITTER VOLTAGE (Voe}#5 CASE TEMPERATURE (Te }e25% a0 or FREQUENCY (1} MHz 920-139.9 Fig. 5 Typical small-signal gain for both types. COLLECTOR-TO-EMITTER VOLTAGE (Voce)? 3V a COLLECTOR CURRENT (Ig }A ASE-TO-EMITTER VOLTAGE (VYge]V 92$-19923R1 Fig. 7 Typical input characteristics for both types. CASE TEMPERATURE 925C COLLECTOR-TO-EMITTER VOLTAGE (Vogh- gecs-19925 Fig. 9 Typical output characteristics G-04 for both types. {vce teatjv Dartington rower Transistors 2N6055, 2N6056 SUPPLY COLLECTOR CURRENT (3)A Fig. 6 Typical saturated switching-time characteristics for both types. COLLECTOR-TO-EMITTEA VOLTAGE (Vce)* 3 BASE -TO-EMITTER VOLTAGE (Vge}v 92cs- 9924Ri Fig. 8 Typical transfer characteristics for both types. 4 COLLECTOR CURRENT (Ic]A 9205-19926 Fig. 10 Typical saturation-voltage charac- teristics for both types. s2s-I9920RI 239oe TE miei 3875081 G E SOLID STATE Q1 DE fj 3875081 oo17esa 4 J; TeBAQZ9 Darlington Power Transistors 2N6055, 2N6056 Veo 20V " OUTPUT TO . Tp, OSCILLOSCOPE ws } TIME (TEKTRONIX MODEL a T LT poe ce Oo. , 8: (NPUT 2-20 OR EQUIVALENT) a 2 INPUT WAVE FOR CHRONETICS PULSE = TB, T OO GENERATOR MODEL No. PG-31, OR Te. EQUIVALENT 2 2N6055 2@N6056 PULSE DURATION 20 ys POSITIVE VOLTAGE Rg * 200 Rc 20 ps NEGATIVE VOLTAGE REP, RATE = 200 Hz TIME * Ip, ANO Iga ARE MEASURED WITH TEKTRONIX CURRENT OUTPUT WAYE FORM PROBE P60I9 AND TYPE 134 AMPLIFIER, OR EQUIVALENT 9a0-13396R! 92cs-19942 Fig. 11 Circuit used to measure saturated Fig. 12 Phase relationship between input switching times. current and output current show- ing reference points for specifi- cation of switching times. 240 0780 G-05