2N3646 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (oC)125o I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.30 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)30m @V(CE) (V) (Test Condition)400m f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)300m @I(B) (A) (Test Condition)30m h(fe) Min. SS Current gain.3.5 @I(C) (A) (Test Condition)30m @V(CE) (V) (Test Condition)10