BFR 93AT NPN Silicon RF Transistor Preliminary data 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93AT R2s Pin Configuration 1=B 2=E Package 3=C SC-75 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 Base current IB 6 Total power dissipation, TS = 85 CF) Ptot 300 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA Thermal Resistance Junction - soldering point RthJS 215 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Dec-16-1998 BFR 93AT Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. 12 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 10 A hFE 50 100 200 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V 2 Dec-16-1998 BFR 93AT Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4.5 6 - Ccb - 0.58 0.9 Cce - 0.22 - Ceb - 1.7 - AC characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - f = 900 MHz - 15.5 - f = 1.8 GHz - 10 - - 13.5 - - 7.5 - Power gain, maximum available 1) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2) 3 Dec-16-1998 BFR 93AT Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 300 Ptot mW 200 tbd 150 100 50 0 0 20 40 60 80 120 C 100 150 TA ,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/PtotDC = f (tp ) 10 3 10 3 Ptotmax / PtotDC RthJS K/W 10 2 tbd 10 1 10 0 -6 10 10 2 tbd 10 1 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Dec-16-1998 BFR 93AT Collector-base capacitance Ccb = f (VCB ) Transition frequency fT = f (IC ) f = 1MHz VCE = Parameter 1.4 7 8V pF GHz 2V 5 fT Ccb 1.0 5V 3V 0.8 4 0.6 3 0.4 2 0.2 1 0.0 0 5 10 V 15 0 0 25 1V 10 20 30 40 mA VCB 60 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma , Gms = f(IC ) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 19 12 8V 5V dB dB 8V 3V 2V 13 2V G ma G 5V 3V 6 1V 10 3 1V 7 0 10 20 30 40 mA 0 0 60 IC 10 20 30 40 mA 60 IC 5 Dec-16-1998 BFR 93AT Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3 =f(IC) (3rd order, Output, ZS =ZL =50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 35 18 dB IC=30mA 0.9GHz dBm 0.9GHz 14 5V IP3 12 G 1.8GHz 4V 25 10 3V 1.8GHz 8 20 2V 6 4 15 2 1V 0 0 3 V 6 10 0 12 10 20 30 mA 40 VCE IC Power Gain |S21 |2 = f(f) Power Gain Gma , Gms = f(f) VCE = Parameter VCE = Parameter 45 dB 60 36 IC=30mA IC =30mA dBm 35 24 G S21 30 25 18 20 12 8V 5V 3V 2V 1V 15 10 6 0 5 0 0 8V 5V 3V 2V 1V 1 2 3 4 5 GHz -6 0 7 f 1 2 3 4 5 GHz 7 f 6 Dec-16-1998