IRFZ44VS
IRFZ44VL
HEXFET® Power MOSFET
01/04/02
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A
IDM Pulsed Drain Current 220
PD @TC = 25°C Power Dissipation 115 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy115 mJ
IAR Avalanche Current55 A
EAR Repetitive Avalanche Energy11 mJ
dv/d t Peak Diode Recovery dv/dt 4.5 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.3 °C/W
RθJA Junction-to-Ambient ––– 40
Thermal Resistance
www.irf.com 1
VDSS = 60V
RDS(on) = 16.5mΩ
ID = 55A
S
D
G
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44VL) is available for low-profile applications.
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lOptimized for SMPS Applications
Description
D2Pak
IRFZ44VS TO-262
IRFZ44VL
PD - 94050A
IRFZ44VS/IRFZ44VL
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V
trr Reverse Recovery Time ––– 70 105 ns TJ = 25°C, IF = 51A
Qrr Reverse Recovery Charge ––– 146 219 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
55
220 A
Starting TJ = 25°C, L = 89µH
RG = 25Ω, IAS = 51A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ISD ≤ 51A, di/dt ≤ 227A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– VV
GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩVGS = 10V, ID = 31A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 24 ––– ––– SV
DS = 25V, ID = 31A
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 67 ID = 51A
Qgs Gate-to-Source Charge ––– ––– 18 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 13 ––– VDD = 30V
trRise Time ––– 97 ––– ID = 51A
td(off) Turn-Off Delay Time ––– 40 ––– RG = 9.1Ω
tfFall Time ––– 57 ––– RD = 0.6Ω, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 1812 ––– VGS = 0V
Coss Output Capacitance ––– 393 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 103 ––– pF ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
IRFZ44VS/IRFZ44VL
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
vs. Temperature
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature
(
C
)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
55A
1
10
100
1000
4 5 6 7 8 9 10 11 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
IRFZ44VS/IRFZ44VL
4www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Cis = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
020 40 60 80 100
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D51A
V = 12V
DS
V = 30V
DS
V = 48V
DS
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Sin
g
le Pulse
T
T = 175 C
= 25 C
°°
J
C
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0.1
1
10
100
1000
0.2 0.7 1.2 1.7 2.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
IRFZ44VS/IRFZ44VL
www.irf.com 5
RD
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RGD.U.T.
10V
+
-
25 50 75 100 125 150 175
0
10
20
30
40
50
60
T , Case Temperature( C)
I , Drain Current (A)
°
C
D
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RGD.U.T.
10V
VDD
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFZ44VS/IRFZ44VL
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
50
100
150
200
250
Startin
g
T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
21A
36A
51A
IRFZ44VS/IRFZ44VL
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFZ44VS/IRFZ44VL
8www.irf.com
D2Pak Package Outline
D2Pak Part Marking Information
10.16 (.400)
R EF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.208)
4.78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5.08 (.200 )
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX .
NOTES:
1 DIM ENSIONS AFTER SOL DER DIP .
2 DIM E NS ION IN G & TO LER AN C IN G P ER AN S I Y14.5M , 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.25 (.010) M B A M MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2 X
LE AD ASSIGNMENTS
1 - GAT E
2 - DRAIN
3 - SOURCE
2.54 (.100)
2 X
Dimensions are shown in millimeters (inches)
LOT COD E 8024
ASSEMBLED ON WW 02, 2000
IN TH E ASSEMBLY LINE "L"
AS S E MBL Y
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART N UMBER
DATE CO DE
YEAR 0 = 2000
WEEK 02
LINE L
F530S
THIS IS AN IRF530S WITH
IRFZ44VS/IRFZ44VL
www.irf.com 9
TO-262 Par t Mar king Infor mation
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRFZ44VS/IRFZ44VL
10 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/02
Dimensions are shown in millimeters (inches)
D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90
(
.429
)
10.70
(
.421
)
16.10
(
.634
)
15.90
(
.626
)
1.75
(
.069
)
1.25
(
.049
)
11.60
(
.457
)
11.40
(
.449
)
15.42
(
.609
)
15.22
(
.601
)
4.72
(
.136
)
4.52
(
.178
)
24.30
(
.957
)
23.90
(
.941
)
0.368
(
.0145
)
0.342
(
.0135
)
1.60
(
.063
)
1.50
(
.059
)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00
(
2.362
)
M IN.
30.40 (1.197)
M AX .
26.40
(
1.039
)
24.40
(
.961
)
NO TES :
1. COM F O R M S T O EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. D IMENSION ME AS URED @ HU B.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/