DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12; BAX12A Controlled avalanche diodes Product specification Supersedes data of 1996 Sep 17 2002 Apr 08 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A FEATURES DESCRIPTION * Hermetically sealed leaded glass SOD27 (DO-35) package The BAX12 and BAX12A are controlled avalanche diodes, fabricated in planar technology and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 90 V * Repetitive peak reverse voltage: max. 90 V * Repetitive peak forward current: max. 800 mA handbook, halfpage k a * Repetitive peak reverse current: max. 600 mA MAM246 * Capable of absorbing transients repetitively. Marking code: BAX12, BAX12A. APPLICATIONS Fig.1 * Switching of inductive loads in semi-electronic telephone exchanges. Simplified outline (SOD27; DO35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage note 1 - 90 V VR continuous reverse voltage note 1 - 90 V IF continuous forward current see Fig.2; note 2 - 400 mA IFRM repetitive peak forward current - 800 mA IFSM non-repetitive peak forward current t = 1 s - 55 A t = 100 s - 15 A t = 10 ms - 9 A Tamb = 25 C; note 2 - 450 mW - 600 mA square wave; Tj = 25 C prior to surge; see Fig.4 Ptot total power dissipation IRRM repetitive peak reverse current ERRM repetitive peak reverse energy - 5 mJ Tstg storage temperature -65 +200 C Tj junction temperature - 200 C tp 50 s; f 20 Hz; Tj = 25 C Notes 1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating. 2. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 2002 Apr 08 2 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR V(BR)R PARAMETER forward voltage CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 10 mA - 750 mV IF = 50 mA - 840 mV IF = 100 mA - 900 mV IF = 200 mA - 1 V IF = 400 mA - 1.25 V VR = 90 V - 100 nA VR = 90 V; Tj = 150 C - 100 A BAX12 IR = 1 mA 120 170 V BAX12A IR = 0.1 mA 120 170 V reverse current see Fig.5 reverse avalanche breakdown voltage Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 - 35 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.10 - 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 2002 Apr 08 3 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A GRAPHICAL DATA MBG455 500 IF MBG463 600 handbook, halfpage handbook, halfpage (mA) IF (mA) 400 (1) (2) (3) 400 300 200 200 100 0 0 0 100 Tamb (oC) 200 0 2 VF (V) (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 1 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG702 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2002 Apr 08 4 104 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A MBG696 107 handbook, full pagewidth IR (nA) 106 105 104 103 102 10 0 100 200 Tj (oC) VR = 90 V. Solid line: maximum values. Dotted line: typical values. Fig.5 Reverse current as a function of junction temperature. MGD003 MBG701 103 40 handbook, halfpage Cd (pF) PRRM (W) 30 102 (1) 20 10 10 1 10-2 0 0 10 20 VR (V) 30 10-1 1 t (ms) 10 Solid line: rectangular waveform; 0.01; Dotted line: triangular waveform; 0.02; f = 1 MHz; Tj = 25 C. (1) Limited by IRMM = 600 mA. f = 1 MHz; Tj = 25 C. Fig.7 Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2002 Apr 08 5 Maximum permissible repetitive peak reverse power as a function of the pulse duration. Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A MBG698 600 MBG699 handbook, halfpage VR handbook, halfpage IR (mA) 400 time (1) (2) (3) (4) IR 200 time t (rectangular waveform) 0 100 150 VR (V) t (triangular waveform) 200 = t T T Reverse voltages higher than the VR ratings are allowed, provided: (a) The transient energy 7.5 mJ at PRRM 30 W or the transient energy 5 mJ at PRRM = 120 W (Tj = 25 C; see Fig.7). (b) T 50 ms and 0.01 for a rectangular waveform or T 50 ms and 0.02 for a triangular waveform (see Fig.9). With increasing temperature, the maximum permissible transient energy must be decreased by 0.03 mJ/K. (1) Tj = 25 C; minimum values. (2) Tj = 175 C; minimum values. (3) Tj = 25 C; maximum values. (4) Tj = 175 C; maximum values. Fig.8 Reverse current as a function of continuous reverse voltage. Fig.9 handbook, full pagewidth tr Peak reverse voltage and current test pulses. tp t D.U.T. RS = 50 V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R = 50 i MGA881 (1) 90% VR input signal Input signal: reverse pulse rise time tr = 0.6 ns; reverse pulse duration tp = 100 ns; duty factor = 0.05. Oscilloscope: rise time tr = 0.35 ns. Circuit capacitance: C 1 pF (oscilloscope input capacitance + parasitic capacitance). (1) IR = 3 mA. Fig.10 Reverse recovery voltage test circuit and waveforms. 2002 Apr 08 t rr 6 output signal Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.56 1.85 4.25 25.4 0 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC JEDEC EIAJ SOD27 A24 DO-35 SC-40 2002 Apr 08 7 EUROPEAN PROJECTION ISSUE DATE 97-06-09 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Apr 08 8 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A NOTES 2002 Apr 08 9 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A NOTES 2002 Apr 08 10 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A NOTES 2002 Apr 08 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA74 (c) Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp12 Date of release: 2002 Apr 08 Document order number: 9397 750 09501