MOTOROLA m= SEMICONDUCTOR ERIE TECHNICAL DATA MRF455 MRF455A The RF Line Efficiency = NPN SILICON RF POWER TRANSISTORS @ Specified 12.5 Voit, 30 MHz Characteristics Output Power = 60 Watts Minimum Gain = 13 dB 55% . designed for power amplifier applications in industrial, com- mercial and amateur radio equipment to 30 MHz. 60 W 30 MHz RF POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS 1 MENSIOM AND TOLERANCING PER 2 CONTROLLING DIMENSION (NCH ANSI 14 SH, 1982 mcnes Oots sees | eo r | Rating Symbot Value Unit ot = wk a : Colisctor-Emitter Valtage VcoEO 18 Vde sae | ' 3 I 2 ome | Collector-Emitter Voltage VcES 36 Vde Pn EsUTTER : 3 | ww i ss : ea 02% f 26 1 2 0 1s, Emitter-Base Voltage VEBO 4.0 Vide + coueeron , a an | eet | tose | Coltector Current Continuous tc 15 Adc , sy 904 te * 07% 04m a, | we | w wo Total Device Dissipation @ Tc = 25C Po 175 Watts CASE 211-07 | al ia! 3p | oma! osx ? Derate above 25C 10 wc MRFASS 3 : aa | ss | a0 | sae | Storage Termperature Range Tstg ~65 to +150 e fu tte | tee | om | orm | THERMAL CHARACTERISTICS Characteristic Symbo! Max Unit Thermai Resistance, Junction to Case Resc 10 cw performance. measuring hfe MATCHING PROCEDURE tn the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum The matching procedure used by Motorola consists of at the data sheet conditions and color cod- ing the device to predetermined hFE ranges within the normal hrE limits. top of the cap. can be paired together to form a matched set of units. A color dot is added to the marking on Any two devices with the same color dot NOTES 1 DMENSIONING AMO TOLERANONG PER ANS! vu 2 CONTROLING DIMENSION INCH a s 1 Oy. a STURT Osa | ay 01 ERATTER El tae 7 BASE 4. 3 ENOTTER Te ] 4 COLLECTOR a3 MY ti. a CASE 1454-09 | uv MOTOROLA RF DEVICE DATA 2-652MRF455, MRF455A ELECTRICAL CHARACTERISTICS (Tc = 26C unless otherwise noted.) | Characteristic | Symbot | Min i Typ I Max I Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO 18 ~ ~ Vde (I = 100 mAdc, Ig = 0} Coilector-Emitter Breakdown Voltage ViBRICES 36 ~ - Vde (Ic = 50 mAdc, Vge = 0) Emitter-Base Breakdown Voltage ViBRIEBO 4.0 ~ - Vde {ig = 10 mAdc, I = 0) ON CHARACTERISTICS are i NEE 10 | - | 150 I. - | {Ic = 5.0 Ade, Vcg = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance | Cob _ | = | 250 | pF | (Veg = 12.5 Vde, Ie = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1} Common-Emitter Amplifier Power Gain Gpe 13 _ - dB (Voc = 12.5 Vide, Poy, = 60 W, f = 30 MHz) Collector Efficiency n 55 _ - % (Veg = 12.5 Vdc, Pout = 60 W, f = 30 MHz) Series Equivalent Input Impedance Zin _ 1.66-j.844 _ Ohms (Voc = 12.5 Vde, Poy, = 60 W, f = 30 MHz) Series Equivalent Output Impedance Zout ~ 1.73-j.188 - Ohms (Voc = 12.5 Vde, Poy, = 80 W, f = 30 MHz) Parailel Equivalent Input Impedance Zin _ 2,09/1030 = Q/pF (Voc = 12.5 Vde, Pout = 60 W, f = 30 MHz) Parallel Equivalent Output Impedance Zout - 1.75/330 - QIpF (Veg = 12.5 Vdc, Poy, = 60 W, f = 30 MHz} ts FIGURE 1 30 MHz TEST CIRCUIT SCHEMATIC + THHHH1I , = C6 cT>aR AR cB 12.5 Vde - AF Output ca RF Input Z ia 1,C2, C4 ARCO 469 La 3 Turns. 18 AWG, 6/167" 1.0 , 5/16" Long C3. ARCO 466 L2 VK200 20/4B, FERROXCUBE C5 1000 pF UNELCO L312 Turns, #18 AWG Enameled Wire, 1/4 1.0, C6,C7 0.1 uF Disk Ceramic Close Wound C8 1000 uF/15 Vv Electrolytic L4 3 Turns 1/8 O.D Copper Tubing, 9/8" 1.0. Rl 10 Onm/1 Watt, Carbon 2/4" Long 40 pee f = 30 MHz Vcc = 13.6 Vde 10 ~ = 60 50 40 30 20 Pout. OUTPUT POWER (WATTS) of 05 10 16 20 25 30 Pin, INPUT POWER (WATTS) 3.6 FIGURE 2 OUTPUT POWER versus INPUT POWER 12.5 Vde 7 FERRITE Beads, FERROXCUBE 456 590-65/3B FIGURE 3 OUTPUT POWER versus SUPPLY VOLTAGE 80 P= 3.5 175W t row 1= 30 MHz 80 70 Pour, POWER OUTPUT {WATTS} 40 45 5D 8.0 13 Vec, SUPPLY VOLTAGE (VOLTS) 3. 10 1 12 14 16 MOTOROLA RF DEVICE DATA 2-653