Dec-04-2002
1
BB914...
Silicon Variable Capacitance Diode
For FM radio tuner with extended
frequency band
High tuning ratio at low supply voltage (car radio)
Monolitic chip (common cathode)
for perfect dual diode tracking
Good linearity for C- V curve
High figure of merit
BB914
3
1
D2
2
D1
Type Package Configuration LS(nH) Marking
BB914 SOT23 common cathode 1.8 SM
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR18 V
Peak reverse voltage
( R
5k
)
VRM 20
Forward current IF50 mA
Operating temperature range Top -55 ... 125 °C
Storage temperature Tstg -55 ... 150
Dec-04-2002
2
BB914...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 16 V
VR = 16 V, TA = 85 °C
IR-
-
-
-
20
200
nA
AC Characteristics
Diode capacitance
VR = 2 V, f = 1 MHz
VR = 8 V, f = 1 MHz
CT
42.5
17.6
43.75
18.7
45
19.75
pF
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
CT2/CT8 2.28 2.34 2.42
Capacitance matching1)
VR = 2 V, VR = 8 V, f = 1 MHz
CT/CT- - 1.5 %
Series resistance
VR = 2 V, f = 100 MHz
rS- 0.28 -
1For details please refer to Application Note 047.
Dec-04-2002
3
BB914...
Diode capacitance CT =
(VR)
f = 1MHz
012345678V10
VR
0
10
20
30
40
50
60
70
80
pF
100
CT
Capacitance ratio CTref/CT =
(VR)
f = 1MHz
012345678V10
VR
0
0.5
1
1.5
2
2.5
3
3.5
4
-
5
CTref / CT
1V
2V
3V
