TGL4201 Wideband Fixed Attenuators Key Features and Performance 0 dB Attenuator * * * * * * * * 2 dB Attenuator Fixed 0, 2, 3, 6 and 10dB Attenators Broadband Response DC to > 40 GHz Excellent Return Loss > 15 dB Power Handling = 20 dBm On-Chip Grounding Vias 3MI Passive Part Low Price Small size: 0.5 x 0.5 x 0.1 mm (0.02 X 0.02 X 0.004 in) Primary Applications 3 dB Attenuator * Point to Point Radio * Fiber Optic * Wideband Military & Space * Test Equipment 6 dB Attenuator Typical Electrical Characteristics Attenuators Probed in Fixtures 10 dB Attenuator A tte n u a tio n (d B ) 0 -1 2dB -2 -3 -4 -5 -6 -7 -8 -9 3dB 6dB 10dB -10 -11 2dB -12 -13 0 10 3dB 20 6dB 10dB 30 40 50 Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2011 (c) Rev B TGL4201 TABLE I ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER IRL ORL TEST CONDITIONS MIN TYP MAX UNIT 0dB Attenuation (-00) DC - 30 GHz 1/ 0 0.1 0.2 dB 2dB Attenuation (-02) DC - 30 GHz 1/ 1.75 2 2.25 dB 3dB Attenuation (-03) DC - 30 GHz 1/ 2.65 3 3.35 dB 6dB Attenuation (-06) DC - 30 GHz 1/ 5.3 6 6.3 dB 10dB Attenuation (-10) DC - 30 GHz 1/ 9.4 10 10.4 dB Input Return Loss Output Return Loss Maximum Power DC - 40 GHz DC - 40 GHz 2 - 18 GHz 15 15 20 dB dB dBm 1/ Measured on wafer with RF probes. Bond wires are not included in this measurement. Wafer is sample tested at ~10%. TGL4201-00 is not RF tested. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2011 (c) Rev B TGL4201 Typical Measurement Attenuators Attenuators Probed in Fixtures 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 3 dB Attenuator R e tu rn L o s s (d B ) R e tu rn L o s s (d B ) 2 dB Attenuator IRL 0 10 20 ORL 30 40 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 IRL 50 0 10 Frequency (GHz) 0 10 20 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 50 40 50 R e tu rn L o s s (d B ) ORL 30 40 10 dB Attenuator R e tu rn L o s s (d B ) IRL 30 Frequency (GHz) 6 dB Attenuator 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 20 ORL 40 50 IRL 0 Frequency (GHz) 10 20 ORL 30 Frequency (GHz) 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2011 (c) Rev B TGL4201 Typical Measurement Attenuators No Bond Wires, Probed from 45 MHz to 110GHz 0 2dB -2 3dB Attenuaton (dB) -4 6dB -6 -8 -10 2dB -12 3dB -14 10dB 6dB -16 10dB -18 0 20 40 60 80 100 Frequency (GHz) Input Return Loss (dB) 0 2dB -10 3dB 6dB -20 10dB 2dB 10dB -30 3dB -40 6dB -50 -60 0 20 40 60 80 100 Frequency (GHz) Output Return Loss (dB) 0 2dB 3dB 6dB 10dB -10 -20 3dB 10dB -30 2dB -40 6dB -50 -60 0 20 40 60 80 100 Frequency (GHz) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2011 (c) Rev B TGL4201 Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2011 (c) Rev B TGL4201 Chip Assembly Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2011 (c) Rev B TGL4201 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Ordering Information PART NUMBER ATTENUATOR TGL4201-00 0 dB Attenuator TGL4201-02 2 dB Attenuator TGL4201-03 3 dB Attenuator TGL4201-06 6 dB Attenuator TGL4201-10 10 dB Attenuator 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2011 (c) Rev B