BZM55-Series
www.vishay.com Vishay Semiconductors
Rev. 2.1, 25-Nov-11 1Document Number: 85597
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Zener Diodes
FEATURES
• Saving space
• Hermetic sealed parts
• Electrical data identical with the devices
BZT55..series, TZM..series
• Fits onto SOD-323
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
•Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 2.4 to 75 V
Test current IZT 2.5; 5 mA
VZ specification Pulse current
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZM55-series BZM55-series-TR3 10 000 (8 mm tape on 13" reel) 10 000
BZM55-series BZM55-series-TR 2500 (8 mm tape on 7" reel) 12 500
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
MicroMELF 12 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation RthJA 300 K/W Ptot 500 mW
Junction to ambient air Mounted on epoxy-glass hard tissue, fig. 1 RthJA 500 K/W
Junction tie point 35 μm copper clad, 0.9 mm2 copper area per
electrode RthJL 300 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
Zener current IZPtot/VZmA
Forward voltage IF = 200 mA VF1.5 V
BZM55-Series
www.vishay.com Vishay Semiconductors
Rev. 2.1, 25-Nov-11 2Document Number: 85597
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin. 35 nA at Tj = 25 °C
(1) tp 10 ms, T/tp > 1000
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IZT2
IR at VRZZ at IZT1 ZZK at IZT2
TKVZ
at Tamb =
25 °C
at Tamb =
125 °C f = 1 kHz
VmA μA V%/K
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZM55C2V4 2.28 2.4 2.56 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06
BZM55C2V7 2.5 2.7 2.9 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06
BZM55C3V0 2.8 3.0 3.2 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05
BZM55C3V3 3.1 3.3 3.5 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZM55C3V6 3.4 3.6 3.8 5 1 < 2 < 40 1 < 90 < 600 -0.08 - 0.05
BZM55C3V9 3.7 3.9 4.1 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZM55C4V3 4 4.3 4.6 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03
BZM55C4V7 4.4 4.7 5 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02
BZM55C5V1 4.8 5.1 5.4 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02
BZM55C5V6 5.2 5.6 6 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05
BZM55C6V2 5.8 6.2 6.6 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06
BZM55C6V8 6.4 6.8 7.2 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07
BZM55C7V5 7 7.5 7.9 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07
BZM55C8V2 7.7 8.2 8.7 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08
BZM55C9V1 8.5 9.1 9.6 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09
BZM55C10 9.4 10 10.6 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1
BZM55C11 10.4 11 11.6 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11
BZM55C12 11.4 12 12.7 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11
BZM55C13 12.4 13 14.1 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11
BZM55C15 13.8 15 15.6 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11
BZM55C16 15.3 16 17.1 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11
BZM55C18 16.8 18 19.1 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11
BZM55C20 18.8 20 21.2 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11
BZM55C22 20.8 22 23.3 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12
BZM55C24 22.8 24 25.6 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12
BZM55C27 25.1 27 28.9 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12
BZM55C30 28 30 32 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12
BZM55C33 31 33 35 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12
BZM55C36 34 36 38 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12
BZM55C39 37 39 41 2.5 0.5 < 0.1 < 5 30 < 90 < 500 0.04 0.12
BZM55C43 40 43 46 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12
BZM55C47 44 47 50 2.5 0.5 < 0.1 < 5 36 110 < 700 0.04 0.12
BZM55C51 48 51 54 2.5 0.5 < 0.1 < 10 39 125 < 700 0.04 0.12
BZM55C56 52 56 60 2.5 0.5 < 0.1 < 10 43 135 < 1000 0.04 0.12
BZM55C62 58 62 66 2.5 0.5 < 0.1 < 10 47 150 < 1000 0.04 0.12
BZM55C68 64 68 72 2.5 0.5 < 0.1 < 10 51 200 < 1000 0.04 0.12
BZM55C75 70 75 79 2.5 0.5 < 0.1 < 10 56 250 < 1500 0.04 0.12
BZM55-Series
www.vishay.com Vishay Semiconductors
Rev. 2.1, 25-Nov-11 3Document Number: 85597
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin. 35 nA at Tj = 25 °C
(1) tp 10 ms, T/tp > 1000
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IZT2
IR at VRZZ at IZT1 ZZK at IZT2
TKVZ
at Tamb =
25 °C
at Tamb =
125 °C f = 1 kHz
VmA μA V%/K
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZM55B2V4 2.35 2.4 2.45 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06
BZM55B2V7 2.64 2.7 2.76 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06
BZM55B3V0 2.94 3.0 3.06 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05
BZM55B3V3 3.24 3.3 3.36 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZM55B3V6 3.52 3.6 3.68 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZM55B3V9 3.82 3.9 3.98 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZM55B4V3 4.22 4.3 4.38 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03
BZM55B4V7 4.6 4.7 4.8 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02
BZM55B5V1 5 5.1 5.2 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02
BZM55B5V6 5.48 5.6 5.72 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05
BZM55B6V2 6.08 6.2 6.32 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06
BZM55B6V8 6.66 6.8 6.94 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07
BZM55B7V5 7.35 7.5 7.65 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07
BZM55B8V2 8.04 8.2 8.36 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08
BZM55B9V1 8.92 9.1 9.28 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09
BZM55B10 9.8 10 10.2 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1
BZM55B11 10.78 11 11.22 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11
BZM55B12 11.76 12 12.24 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11
BZM55B13 12.74 13 13.26 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11
BZM55B15 14.7 15 15.3 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11
BZM55B16 15.7 16 16.3 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11
BZM55B18 17.64 18 18.36 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11
BZM55B20 19.6 20 20.4 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11
BZM55B22 21.55 22 22.45 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12
BZM55B24 23.5 24 24.5 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12
BZM55B27 26.4 27 27.6 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12
BZM55B30 29.4 30 30.6 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12
BZM55B33 32.4 33 33.6 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12
BZM55B36 35.3 36 36.7 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12
BZM55B39 38.2 39 39.8 2.5 1 < 0.1 < 5 30 < 90 < 500 0.04 0.12
BZM55B43 42.1 43 43.9 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12
BZM55B47 46.1 47 47.9 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12
BZM55B51 50 51 52 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12
BZM55B56 54.9 56 57.1 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12
BZM55B62 60.8 62 63.2 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12
BZM55B68 66.6 68 69.4 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12
BZM55B75 73.5 75 76.5 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12
BZM55-Series
www.vishay.com Vishay Semiconductors
Rev. 2.1, 25-Nov-11 4Document Number: 85597
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Fig. 3 - Temperature Coefficient of Vz vs. Z-Voltage
Fig. 4 - Diode Capacitance vs. Z-Voltage
Fig. 5 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 6 - Forward Current vs. Forward Voltage
0 120 160
0
100
300
400
500
600
Ptot - Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
200
95 9602
200
80
40
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
V
Z
- Z-Voltage (V)
25
95 9598
Tj = 25 °C
IZ = 5 mA
05
- 5
0
5
10
15
VZ - Z-Voltage (V)
95 9600
IZ = 5 mA
0 10 203040 50
TKVZ - Temperature Coefficient
of VZ (10-4/K)
10 15
0
50
100
150
200
C
D
- Diode Capacitance (pF)
V
Z
- Z-Voltage (V)
25
95 9601
20
T
j
= 25 °C
V
R
= 2 V
05
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TK
VZ
= 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tj = 25 °C
BZM55-Series
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Rev. 2.1, 25-Nov-11 5Document Number: 85597
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Fig. 7 - Z-Current vs. Z-Voltage
Fig. 8 - Z-Current vs. Z-Voltage
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
Fig. 10 - Board for RthJA Definition (in mm)
Fig. 11 - Recommended Foot Pads (in mm)
Fig. 12 - Recommended Foot Pads (in mm)
820
95 9604
0
20
40
60
80
100
IZ - Z-Current (mA)
Ptot = 500 mW
Tamb = 25 °C
046 12
VZ - Z-Voltage (V)
15 20 25 30
0
10
20
30
40
50
IZ - Z-Current (mA)
VZ - Z-Voltage (V)
35
95 9607
Ptot = 500 mW
Tamb = 25 °C
0 101520
1
10
100
1000
25
95 9606
Tj = 25 °C
IZ = 1 mA
5 mA
10 mA
V
Z
- Z-Voltage (V)
r
Z
- Differential Z-Resistance (Ω)
5
25
2.5
10
0.71 1.3 1.27
9.9
24
0.152
0.355
95 10329
1.2
0.8
2.4
0.8 0.8
16773
ReflowSoldering
1.4
1.0
2.8
0.9 0.9
Wave Soldering
16774
BZM55-Series
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Rev. 2.1, 25-Nov-11 6Document Number: 85597
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Fig. 13 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): MicroMELF
1
10
100
1000
Zthp - Thermal Resistance for Pulse Cond. (KW)
tp - Pulse Length (ms) 95 9603
10-1 100101102
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Single Pulse RthJA = 300 K/W
T = Tjmax - Tamb
iZM = (- VZ + (VZ
2 + 4rzj x T/Zthp) 1/2)/(2rzj)
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Revision: 12-Mar-12 1Document Number: 91000
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