For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
1
HMC441LC3B
v05.1112
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
General Description
Features
Functional Diagram
The HMC441LC3B is an efficient GaAs PHEMT
MMIC Medium Power Amplier housed in a leadless
RoHS compliant SMT package. Operating between
6 and 18 GHz, the amplier provides 14 dB of gain,
+21.5 dBm of saturated power and 27% PAE from
a +5V supply. This 50 Ohm matched amplier does
not require any external components and operates
from a single positive supply, making it an ideal
linear gain block or driver for HMC SMT mixers. The
HMC441LC3B is compatible with high volume surface
mount manufacturing techniques, and the I/Os are
DC blocked for further ease of integration.
Gain: 14 dB
Saturated Output Power: +21.5 dBm @ 27% PAE
Single Positive Supply: +5V @ 90 mA
50 Ohm Matched Input/Output
12 Lead Ceramic 3x3mm SMT Package: 9mm2
Electrical Specications, TA = +25° C, Vdd = +5V
Typical Applications
The HMC441LC3B is ideal for use as a medium power
amplier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for HMC Mixers
• Military EW & ECM
Parameter Min. Ty p. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 6.0 - 8.5 8.5 - 12.5 12.5 - 14.0 14.0 - 18.0 GHz
Gain 10 14 19 13 17 21 13 17 21 10 14 19 dB
Gain Variation Over Temperature 0.015 0.02 0.015 0.02 0.015 0.02 0.015 0.02 dB/ °C
Input Return Loss 10 13 20 13 dB
Output Return Loss 12 15 17 14 dB
Output Power for 1 dB
Compression (P1dB) 16 19 17 20 17 20 17 20 dBm
Saturated Output Power (Psat) 20 21.5 22.5 21.5 dBm
Output Third Order Intercept (IP3) 28 30 29 32 29 32 29 32 dBm
Noise Figure 4.5 64.5 64.5 64.5 6dB
Supply Current (Idd) 90 115 90 115 90 115 90 115 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
2
HMC441LC3B
v05.1112
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
4 6 8 10 12 14 16 18 20
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
6 7 8 9 10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
6 7 8 9 10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
6 7 8 9 10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
6 7 8 9 10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
P1dB (dBm)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
6 7 8 9 10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
3
HMC441LC3B
v05.1112
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Power Compression @ 11 GHz
Output IP3 vs. Temperature Noise Figure vs. Temperature
Gain, Power & Output IP3
vs. Supply Voltage @ 11 GHz Reverse Isolation vs. Temperature
Power Compression @ 15 GHz
0
5
10
15
20
25
30
-10 -8 -6 -4 -2 0 2 4 6 8 10
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
-10 -8 -6 -4 -2 0 2 4 6 8 10
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
22
24
26
28
30
32
34
36
6 7 8 9 10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
IP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
6 7 8 9 10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
32
34
4.5 5 5.5
Gain
P1dB
Psat
IP3
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Vdd (V)
-60
-50
-40
-30
-20
-10
0
6 7 8 9 10 11 12 13 14 15 16 17 18
+25 C +85 C -40 C
ISOLATION (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
4
HMC441LC3B
v05.1112
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc) +15 d Bm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 8.2 mW/°C above 85 °C) 0.74 W
Thermal Resistance
(channel to ground paddle) 122 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 0, Passed 100V
Vdd (V) Idd (mA)
+5.5 92
+5.0 90
+4.5 88
Note: Amplier will operate over full voltage range shown above
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
5
HMC441LC3B
v05.1112
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 3, 7, 9 GND Package bottom must also be
connected to RF/DC ground
2RFIN This pin is AC coupled
and matched to 50 Ohms.
4 - 6
10, 12 N/C This pin may be connected to RF/DC ground.
Performance will not be affected.
8RFOUT This pin is AC coupled
and matched to 50 Ohms.
11 Vdd Power Supply Voltage for the amplier.
External bypass capacitors are required.
Component Value
C1 100 pF
C2 1,000 pF
C3 2.2 µF
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
6
HMC441LC3B
v05.1112
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 109712 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1 100 pF Capacitor, 0402 Pkg.
C2 1000 pF Capacitor, 0603 Pkg.
C3 2.2 µF Capacitor, Tantalum
U1 HMC441LC3B Amplier
PCB [2] 109710 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350