DMN2011UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary BVDSS Features RDS(ON) MAX ID MAX TA = +25C 9.5m @ VGS = 4.5V 11.7A 11m @ VGS = 2.5V 10.8A 20V Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, 0.6mm Profile - Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ making it ideal for high efficiency power management applications. Applications Mechanical Data General Purpose Interfacing Switch Power Management Functions Case: U-DFN2020-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) D U-DFN2020-6(Type F) G Pin1 ESD PROTECTED Gate Protection Diode Pin1 Top View Bottom View Pin Out Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMN2011UFDF-7 DMN2011UFDF-13 Notes: Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Reel Size (inches) 7 13 Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMN2011UFDF Datasheet number: DS37734 Rev. 2 - 2 1 of 8 www.diodes.com February 2020 (c) Diodes Incorporated DMN2011UFDF Marking Information Date Code Key Year Code Month Code YM N2 N2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) 2016 D ... ... 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N 2027 O 2028 P 2029 R Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 7 8 9 O N D 1 2 3 4 5 6 Site 2 N2 Date Code Key Year Code 2016 6 ... ... Week Code Internal Code Code 2020 0 2021 1 D5 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal Code (ex: U = Monday) YWX ADVANCE INFORMATION Site 1 2022 2 2023 3 2024 4 1-26 A-Z Sun T DMN2011UFDF Datasheet number: DS37734 Rev. 2 - 2 2025 5 2026 6 2027 7 27-52 a-z Mon U Tue V Wed W 2 of 8 www.diodes.com 2028 8 2029 9 53 z Thu X Fri Y Sat Z February 2020 (c) Diodes Incorporated DMN2011UFDF Maximum Ratings (@TA = +25C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25C TA = +70C TA = +25C TA = +70C t<10s Value 20 12 11.7 9.3 ID A 14.2 11.4 80 2.5 18 17 ID Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Body Diode Continuous Current Avalanche Current (Notes 7) L = 0.1mH Avalanche Energy (Notes 7) L = 0.1mH Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics Characteristic Symbol TA = +25C TA = +70C Steady State t<10s TA = +25C TA = +70C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 0.73 0.47 175 128 2.1 1.3 61 45 9.3 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Unit W C/W W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 -- -- -- -- -- -- 1 10 V A A VGS = 0V, ID = 250A VDS = 16V, VGS = 0V VGS = 10V, VDS = 0V VGS(TH) 0.4 RDS(ON) -- m VSD -- 1.0 9.5 11 20 35 1.2 V Static Drain-Source On-Resistance -- 6.5 7.5 10 15 0.7 VDS = VGS, ID = 250A VGS = 4.5V, ID = 7A VGS = 2.5V, ID = 7A VGS = 1.8V, ID = 5A VGS = 1.5V, ID = 3A VGS = 0V, IS = 8.5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF TRR QRR -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2248 295 265 1.5 24 56 3.5 5.1 3.6 2.6 21.6 13.5 12.8 6.9 -- -- -- -- -- -- -- -- -- -- -- -- -- -- pF pF pF nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance 4 Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 8.5A VDS = 10V, ID = 8.5A VGS = 4.5V, Rg = 1.8 IF = 8.5A, di/dt = 210A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2011UFDF Datasheet number: DS37734 Rev. 2 - 2 3 of 8 www.diodes.com February 2020 (c) Diodes Incorporated DMN2011UFDF 30.0 30 VGS = 10V VDS = 5.0V VGS = 4.5V 25.0 VGS = 4.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) )A ( T 20 N E R R U C 15 N IA R D 10 ,D I VGS = 3.0V 20.0 VGS = 1.5V VGS = 2.5V VGS = 2.0V 15.0 10.0 5.0 TA = 150C TA = 125C TA = 85C TA = 25C 5 VGS = 1.2V TA = -55C VGS = 1.0V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 VGS = 1.5V VGS = 1.8V VGS = 2.5V VGS = 4.5V 0.5 1 1.5 2 2.5 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.03 0.025 ID = 8.5A 0.02 ID = 3.0A 0.015 0.01 0.005 0 0 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.016 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 12 2 VGS = 4.5V 0.014 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION VGS = 3.5V 0.012 150C TT AA==150 0.01 TTAA==125 125C 0.008 T = 85 TAA = 85C 0.006 T TAA = 25 25C T -55C TAA == -55 0.004 0.002 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN2011UFDF Datasheet number: DS37734 Rev. 2 - 2 30 4 of 8 www.diodes.com 1.6 VGS = 2.5 V ID = 5A 1.2 VGS = 1.8V ID = 3A 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature February 2020 (c) Diodes Incorporated DMN2011UFDF 1 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.02 0.016 VGS = 1.8V ID = 3A 0.014 0.012 0.01 VGS = 2.5V ID = 5A 0.008 0.006 0.004 0.002 0 0.8 ID = 1mA 0.6 IDI=250A D = 250 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Temperature Figure 8 Gate Threshold Variation vs. Junction Ambient Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 10000 30 CT, JUNCTION CAPACITANCE (pF) f = 1MHz IS, SOURCE CURRENT (A) 25 )A ( T N 20 E R R U C 15 E C R U O 10 S ,S I 5 0 TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C Ciss 1000 Coss Crss 100 0 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 1000 RDS(ON) Limited 9 8 100 )A ( T N E 10 R R U DC C N PW = 10s 1 I A PW= 1s R D PW = 100ms ,D PW = 10ms TJ(MAX)= 150C -I P W = 1ms 0.1 T = 25C 7 6 VDS = 10V ID = 8.5A 5 4 3 2 A VGS = 4.5V Single Pulse DUT on 1 * MRP Board 1 0 0 20 ID, DRAIN CURRENT (A) VOLTAGE V VGS SOURCE VOLTAGE GATETHRESHOLD (V)(V) GS,GATE ADVANCE INFORMATION 0.018 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN2011UFDF Datasheet number: DS37734 Rev. 2 - 2 60 0.01 0.01 5 of 8 www.diodes.com PW = 100s 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 February 2020 (c) Diodes Incorporated DMN2011UFDF r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA C/W RJA = 207 /W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 DMN2011UFDF Datasheet number: DS37734 Rev. 2 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 6 of 8 www.diodes.com 100 1000 February 2020 (c) Diodes Incorporated DMN2011UFDF Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) A1 A A3 Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 z1 z(4x) e2 k e L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) X3 C Y X Dimensions Y3 Y2 Y1 Y4 X1 Pin1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 DMN2011UFDF Datasheet number: DS37734 Rev. 2 - 2 7 of 8 www.diodes.com February 2020 (c) Diodes Incorporated DMN2011UFDF ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2020, Diodes Incorporated www.diodes.com DMN2011UFDF Datasheet number: DS37734 Rev. 2 - 2 8 of 8 www.diodes.com February 2020 (c) Diodes Incorporated