DMN2011UFDF
Datasheet number: DS37734 Rev. 2 - 2
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20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) MAX
20V
9.5mΩ @ VGS = 4.5V
11mΩ @ VGS = 2.5V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Features
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Reel Size (inches)
Quantity per Reel
DMN2011UFDF-7
U-DFN2020-6 (Type F)
7
3,000
DMN2011UFDF-13
U-DFN2020-6 (Type F)
13
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Pin1
ESD PROTECTED
e4
Equivalent Circuit
D
S
G
Gate Protection
Diode
U-DFN2020-6(Type F)
Pin1
Bottom View
Top View
Pin Out
Bottom View
DMN2011UFDF
Datasheet number: DS37734 Rev. 2 - 2
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Marking Information
Site 1
Date Code Key
Year
2016
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
D
…
H
I
J
K
L
M
N
O
P
R
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Site 2
Date Code Key
Year
2016
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
6
…
0
1
2
3
4
5
6
7
8
9
Week
1-26
27-52
53
Code
A-Z
a-z
z
Internal Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
Code
T
U
V
W
X
Y
Z
N2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
N2
Y
M
D5 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
N2
YWX
DMN2011UFDF
Datasheet number: DS37734 Rev. 2 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
11.7
9.3
A
t<10s
TA = +25°C
TA = +70°C
ID
14.2
11.4
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
80
A
Maximum Body Diode Continuous Current
IS
2.5
A
Avalanche Current (Notes 7) L = 0.1mH
IAS
18
A
Avalanche Energy (Notes 7) L = 0.1mH
EAS
17
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.73
W
TA = +70°C
0.47
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RJA
175
°C/W
t<10s
128
Total Power Dissipation (Note 6)
TA = +25°C
PD
2.1
W
TA = +70°C
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RJA
61
°C/W
t<10s
45
Thermal Resistance, Junction to Case (Note 6)
RJC
9.3
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
20
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1
A
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
A
VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
0.4
—
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
6.5
9.5
mΩ
VGS = 4.5V, ID = 7A
7.5
11
VGS = 2.5V, ID = 7A
10
20
VGS = 1.8V, ID = 5A
15
35
VGS = 1.5V, ID = 3A
Diode Forward Voltage
VSD
—
0.7
1.2
V
VGS = 0V, IS = 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
—
2248
—
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
295
—
pF
Reverse Transfer Capacitance 4
Crss
—
265
—
pF
Gate Resistance
Rg
—
1.5
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
—
24
—
nC
VDS = 10V, ID = 8.5A
Total Gate Charge (VGS = 10V)
Qg
—
56
—
nC
Gate-Source Charge
Qgs
—
3.5
—
nC
Gate-Drain Charge
Qgd
—
5.1
—
nC
Turn-On Delay Time
tD(ON)
—
3.6
—
ns
VDS = 10V, ID = 8.5A
VGS = 4.5V, Rg = 1.8Ω
Turn-On Rise Time
tR
—
2.6
—
ns
Turn-Off Delay Time
tD(OFF)
—
21.6
—
ns
Turn-Off Fall Time
tF
—
13.5
—
ns
Reverse Recovery Time
TRR
—
12.8
—
ns
IF = 8.5A, di/dt = 210A/μs
Reverse Recovery Charge
QRR
—
6.9
—
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2011UFDF
Datasheet number: DS37734 Rev. 2 - 2
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0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I , DRAIN CURRENT (A)
D
V = 1.0V
GS
V = 1.2V
GS
V = 1.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 2.0V
GS
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 2.5V
GS
V = 4.5V
GS
V = 1.8V
GS
V = 1.5V
GS
0
0.005
0.01
0.015
0.02
0.025
0.03
0 2 4 6 8 10 12
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I = 3.0A
D
I = 8.5A
D
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55
癈
A
T = 25
癈
A
T = 85
癈
A
T = 125
癈
A
T = 150
癈
A
V = 4.5V
GS
0.4
0.8
1.2
1.6
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = V
I = 3A
GS
D
1.8
V = V
I = 5A
GS
D
2.5
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = 5.0V
DS
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
ID, DRAIN CURRENT (A)
TA = 25°C
TA = -55°C
TA = 85°C
TA = 125°C
TA = 150°C
DMN2011UFDF
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0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = .5V
I = 5A
GS
D
2
V = V
I = 3A
GS
D
1.8
0
0.2
0.4
0.6
0.8
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
I = 1mA
D
I = 250
礎
D
V, GATE THRESHOLD VOLTAGE (V)
GS(th)
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C , JUNCTION CAPACITANCE (pF)
T
100
1000
10000
0 2 4 6 8 10 12 14 16 18 20
f = 1MHz
Ciss
Coss
Crss
Q (nC)
g, TOTAL GATE CHARGE
Figure 11 Gate Charge
V GATE THRESHOLD VOLTAGE (V)
GS
0
1
2
3
4
5
6
7
8
9
10
010 20 30 40 50 60
V = 10V
I = A
DS
D
8.5
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
R
Limited
DS(ON)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(MAX)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = -55°C
A
T = 85°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
ID=250A
Junction Temperature
VGS, GATE SOURCE VOLTAGE (V)
DMN2011UFDF
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0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) * R
R = 207
癈
/W
Duty Cycle, D = t1/ t2

JA JA
JA
°C/W
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0.00
0.05
0.03
A3
-
-
0.15
b
0.25
0.35
0.30
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
D2a
0.33
0.43
0.38
E
1.95
2.05
2.00
E2
1.05
1.25
1.15
E2a
0.65
0.75
0.70
e
0.65 BSC
e2
0.863 BSC
e3
0.70 BSC
e4
0.325 BSC
k
0.37 BSC
k1
0.15 BSC
k2
0.36 BSC
L
0.225
0.325
0.275
z
0.20 BSC
z1
0.110 BSC
z2
0.20 BSC
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
Dimensions
Value
(in mm)
C
0.650
X
0.400
X1
0.480
X2
0.950
X3
1.700
Y
0.425
Y1
0.800
Y2
1.150
Y3
1.450
Y4
2.300
D
D2
E
e b
L
E2
AA3
Seating Plane
A1
z(4x)
e2
E2a
D2a
z1
e3 e4
k2
k
k1
z2
Pin1
Y4
Y2
Y
XC
X3
Y1
X1
X2
Y3
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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