J/SST201 Series
Siliconix
P-37995—Rev. D, 11-Aug-94 1
N-Channel JFETs
J201 SST201
J202 SST202
J204 SST204
Product Summary
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J/SST201 –0.3 to –1.5 –40 0.5 0.2
J/SST202 –0.8 to –4 –40 1 0.9
J/SST204 –0.3 to –2 –25 0.5 0.2
Features Benefits Applications
Low Cutoff Voltage: J201 <1.5 V
High Input Impedance
Very Low Noise
High Gain: AV = 80 @ 20 A
Full Performance from Low Voltage
Power Supply: Down to 1.5 V
Low Signal Loss/System Error
High System Sensitivity
High Quality Low-Level Signal
Amplification
High-Gain, Low-Noise Amplifiers
Low-Current, Low-Voltage
Battery-Powered Amplifiers
Infrared Detector Amplifiers
Ultra High Input Impedance
Pre-Amplifiers
Description
The J/SST201 series features low leakage, very low noise, and
low cutoff voltage for use with low-level power supplies. The
J/SST201 is excellent for battery powered equipment and low
current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
TO-226AA
(TO-92)
Top View
J201
J202
J204
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70233.
Applications information may also be obtained via FaxBack, request document #70595 and document #70599.
J/SST201 Series
2 Siliconix
P-37995—Rev. D, 11-Aug-94
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage –40 V. . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
Specificationsa
Limits
J/SST201 J/SST202 J/SST204d
Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 A , VDS = 0 V –40 –40 –25 V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA –0.3 –1.5 –0.8 –4 –0.3 –2
Saturation Drain CurrentcIDSS VDS = 15 V, VGS = 0 V 0.2 10.9 4.5 0.2 3 mA
Gate Reverse Current
IGSS
VGS = –20 V, VDS = 0 V –2 –100 –100 –100 pA
G
a
t
e
R
everse
C
urren
t
I
GSS TA = 125_C–1 nA
Gate Operating Current IGVDG = 10 V, ID = 0.1 mA –2
pA
Drain Cutoff Current ID(off) VDS = 15 V, VGS = –5 V 2 p
A
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance gfs VDS = 15 V, VGS = 0 V
f = 1 kHz 0.5 1 0.5 mS
Common-Source
Input Capacitance Ciss VDS = 15 V, VGS = 0 V
f1MH
4.5
pF
Common-Source
Reverse Transfer Capacitance Crss
DS ,GS
f = 1 MHz 1.3 p
F
Equivalent Input Noise Voltage enVDS = 10 V, VGS = 0 V
f = 1 kHz 6nV⁄
√Hz
Notes
a. TA = 25_C unless otherwise noted. NPA
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
c. Pulse test: PW 300 s duty cycle 3%.
d. See 2N/SST5484 Series for J204 typical characteristic curves.
J/SST201 Series
Siliconix
P-37995—Rev. D, 11-Aug-94 3
Typical Characteristics (25_C Unless Noted)
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
01530
Gate Leakage Current
VDG – Drain-Gate Voltage (V)
– Gate Leakage (A)
IG
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
ID = 100 mA
ID = 500 mA
IG @ ID = 500 mA
ID = 100 mA
10
0
8
6
4
2
0–5–4–3–2–1
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
– Saturation Drain Current (mA)
IDSS
gfs – Forward Transconductance (mS)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs IDSS
1500
0–3–5–4–2–1
1200
900
600
300
00.01 0.1 1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
01216420
360
160
80
0
2
012168420
1.6
1.2
0.8
0.4
0
Output Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance
vs. Drain Current
Output Characteristics
ID – Drain Current (mA)VGS(off) – Gate-Source Cutoff Voltage (V)
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)
gfs – Forward Transconductance (mS)
– Drain Current (
ID
– Drain Current (mA)
ID
TA = –55_C
125_C
–0.2 V
–0.4 V
VGS = 0 V
–0.6 V
–0.9 V
–0.1 V
–0.3 V
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
rDS
gos
–0.3 V
6 1.2
240
8
VGS(off) = –1.5 VVGS(off) = –0.7 V
mA)
25_C
–0.5 V –1.2 V
VDS = 10 V
f = 1 kHz
VGS(off) = –1.5 V
VGS = 0 V
S)g – Output Conductance (m
rDS(on) – Drain-Source On-Resistance ( )W
J/SST201 Series
4 Siliconix
P-37995—Rev. D, 11-Aug-94
Typical Characteristics (25_C Unless Noted)
2
0 –1.2 –1.6 –2–0.8–0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
VGS – Gate-Source Voltage (V)
– Drain Current (mA)
ID
TA = –55_C
125_C
25_C
VDS = 10 VVGS(off) = –1.5 V
500
0 –0.3–0.2–0.1 –0.4 –0.5
400
300
200
100
0
Transfer Characteristics
VGS – Gate-Source Voltage (V)
TA = –55_C
125_C
25_C
VDS = 10 VVGS(off) = –0.7 V
– Drain Current (
IDmA)
0.1 10.01
4
–1.2 –2–1.6–0.8–0.40
3.2
2.4
1.6
0.8
0
0.01 0.1 1
200
160
120
80
40
0
2000
1600
1200
800
400
0
AV– Voltage Gain
ID – Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
Transconductance vs. Gate-Source Voltage
TA = –55_C
125_C
gfs – Forward Transconductance (mS)
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
ID – Drain Current (mA)
25_C
VGS(off) = –0.7 V
–1.5 V
VGS(off) = –0.7 V
–1.5 V
1.5
0 –0.3 –0.4–0.2–0.1 –0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
TA = –55_C
125_C
gfs – Forward Transconductance (mS)
VGS – Gate-Source Voltage (V)
25_C
VDS = 10 V
f = 1 kHz
VGS(off) = –0.7 V VDS = 10 V
f = 1 kHz
VGS(off) = –1.5 V
AV+
gfs RL
1)RLgos
Assume VDD = 15 V, VDS = 5 V
RL+
10 V
ID
rDS(on) – Drain-Source On-Resistance ( )W
J/SST201 Series
Siliconix
P-37995—Rev. D, 11-Aug-94 5
Typical Characteristics (25_C Unless Noted)
10
0 –12 –16 –20–8–4
8
6
4
2
0
5
0 –12 –20–16–8–4
4
3
2
1
0
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
– Reverse Feedback Capacitance (pF)Crss
VGS – Gate-Source Voltage (V)
VDS = 0 V
10 V
f = 1 MHz
VGS – Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
– Input Capacitance (pF)Ciss
VDS = 0 V
10 V
f = 1 MHz
10 100 1 k 100 k10 k
20
16
12
8
4
0
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
Equivalent Input Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = 10 V
ID @ 100 A
VGS = 0 V
3
2.4
1.8
0.8
0.4
00.01 0.1 1
25_C
Output Characteristics
300
0 0.5
240
180
120
60
0
VDS – Drain-Source Voltage (V)
0.1 0.2 0.3 0.4
– Drain Current (mA)
ID
Output Characteristics
1.0
0 1.0
0.8
0.6
0.4
0.2
0
VDS – Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
VGS(off) = –0.7 V VGS = 0 V
–0.1
–0.2
–0.3
–0.4
–0.5
VGS(off) = –1.5 V
VGS = 0 V
–0.3
–0.6
–0.9
–1.2
VDS = 10 V
f = 1 kHz
VGS(off) = –1.5 V
S)g – Output Conductance (
– Drain Current (
IDA)
nVen/Hz
√)(– Noise Voltage
