NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area,
high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer
excellent output linearity and wide dynamic range.
S3901-FX series image sensors are variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the
light input window, the S3901-FX series was developed for detection of X-rays and electrons. The S3901-FX offers particularly high sensitivity to
X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd
2
O
2
S·Tb) whose composition is carefully selected to
provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength.
The S3901-FX series active area consists of a photodiode array with pixels formed at 50 µm pitches and a height of 2.5 mm. The number of pixels
can be selected from 256 or 512.
Hamamatsu S3902/S3903/S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor
material as S3901-FX series.
Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.
Features
l
Wide active area
Pixel pitch: 50 µm
Pixel height: 2.5 mm
l
Low dark current and high saturation charge allow a
long integration time and a wide dynamic range at room
temperature
l
Excellent output linearity and sensitivity spatial uniformity
l
Low power consumption: 1 mW Max.
l
Start pulse and clock pulse are CMOS logic compatible
Applications
l
Test equipment using X-ray and electron beam transmission
l
X-ray non-destructive inspection
l
X-ray and electron beam detector
IMAGE SENSOR
NMOS linear image sensor
Image sensor highly sensitive to X-rays from 10 k to 100 keV
S3901-FX series
2.5 mm
1.0 µm
1.0 µm
400 µm
OXIDATION SILICON
N TYPE SILICON
P TYPE SILICON
FIBER OPTIC PLATE
45 µm
50 µm
PHOSPHOR MATERIAL
Vss
START st
CLOCK
CLOCK 1
2
ACTIVE
PHOTODIODE
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
DUMMY DIODE
DUMMY VIDEO
ACTIVE VIDEO
END OF SCAN
DIGITAL SHIFT REGISTER
(MOS SHIFT REGISTER)
KMPDC0020EA
Figure 1 Equivalent circuit Figure 2 Active area structure
■ Absolute maximum ratings
Parameter Symbol Value Unit
Input pulse (φ1, φ2, φst) voltage Vφ15 V
Power consumption *1P 1 mW
Operating temperature *2Topr -30 to +60 °C
Storage temperature Tstg -40 to +80 °C
*1: Vφ=5.0 V
*2: No condensation
KMPDC0008EA
NMOS linear image sensor
S3901-FX series
■ Shape specifications
Parameter S3901-256FX S3901-512FX Unit
Number of pixels 256 512 -
Package length 31.75 40.6 mm
Number of pin 22 -
Window material *3Fiber optic plate -
Weight 8.0 10.0 g
*3: To prevent unwanted effects from stray light, S3901-FX series is supplied with an aluminum cover fitted on the phosphor-
coated FOP.
■ Specifications (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Pixel pitch - - 50 - µm
Pixel height - - 2.5 -mm
Spectral response ran
g
e
(
20 % of peak
)
λ10 to 100 keV
Photo sensitivity S - 14 -pC/mR
Photodiode dark current *4ID-0.20.6pA
Photodiode capacitance *4Cph -20 -pF
Saturation exposure *4Esat - 2.8 - mR
Saturation output charge *4Qsat -50 -pC
Photo response non-uniformity *5PRNU - - ±10 %
*4: Vb=2.0 V, Vφ=5.0 V
*5: Measured under the following conditions including uniformity in the phosphor emission (but excluding dark current
components).
Tungsten cathode X-ray tube: 40 keV
Distance between S3901-FX series and X-ray tube: 30 cm
Phosphor material: Gd 2O2S.Tb (thickness=200 µm, λp=550 nm, decay time=1 ms)
■ Electrical characteristics (Ta=25 °C)
Parameter Symbol Condition Min. Typ. Max. Unit
High V
φ
1, V
φ
2 (H) 4.5 5 10 V
Clock pulse (
φ
1,
φ
2) voltage Low Vφ1, Vφ2 (L) 0-0.4V
High Vφs (H) 4.5 Vφ110 V
Start pulse (φst) voltage Low Vφs (L) 0 - 0.4 V
Video bias voltage *6Vb 1.5 Vφ - 3.0 Vφ - 2.5 V
Saturation control gate voltage Vscg - 0 - V
Saturation control drain voltage Vscd - Vb - V
Clock pulse (
φ
1,
φ
2) rise / fall time *7trφ1, trφ2
tfφ1, tfφ2-20 -ns
Clock pulse (φ1, φ2) pulse width tpwφ1, tpwφ2200 - - ns
Start pulse (φst) rise / fall time trφs, tfφs-20 -ns
Start pulse (φst) pulse width tpwφs200 - - ns
Start pulse (φst) and clock pulse
(φ2) overlap tφov 200 - - ns
Clock pulse space *7X1, X2trf - 20 - - ns
Data rate *8f0.1 -2000 kHz
- 120 (-256 FX) - ns
Video delay time tvd 50 % of
saturation *8, *9- 160 (-512 FX) - ns
-36 (-256 FX) -pF
Clock pulse (φ1, φ2)
line capacitance Cφ5 V bias -67 (-512 FX) -pF
- 20 (-256 FX) - pF
Saturation control gate (Vscg)
line capacitance Cscg 5 V bias - 35 (-512 FX) - pF
-11 (-256 FX) -pF
Video line capacitance CV2 V bias -20 (-512 FX) -pF
*6: V
φ
is input pulse voltage
*7: trf is the clock pulse rise or fall time. A clock pulse space of rise time/fall time - 20 ns (nanoseconds) or more should be input
if the clock pulse rise or fall time is longer than 20ns.
*8: Vb=2.0 V, V
φ
=5.0 V
*9: Measured with C7883 driver circuit.
NMOS linear image sensor
S3901-FX series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
Cat. No. KMPD1005E04
Oct. 2005 DN
Figure 3 Dimensional outlines (unit: mm)
S3901-256FX
0.51
25.4
2.54
3.0 3.4
ACTIVE AREA
12.8 × 2.5 6.4 ± 0.3
31.75
10.4
5.4 ± 0.25.0 ± 0.2
0.25
10.0
10.16
PHOTOSENSITIVE
SURFACE
KMPDA0031EA
S3901-512FX
0.51
25.4
40.6
10.4
5.4 ± 0.25.0 ± 0.2
12.8 ± 0.3
ACTIVE AREA
25.6 × 2.5
0.25
10.16
2.54
10.0
3.0 3.4
PHOTOSENSITIVE
SURFACE
KMPDA0032EA
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
END OF SCAN
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
2
1
st
Vss
Vscg
NC
Vscd
Vss
ACTIVE VIDEO
DUMMY VIDEO
Vsub
Vss, Vsub and NC should be grounded.
KMPDC0056EA
Figure 4 Pin connection