TLP281-4(F) - TOSHIBA - Datasheet.Live

TLP281,TLP281-4

1 2019-06-17

Toshiba Electronic Devices & Storage Corporation

TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR

TLP281, TLP281-4

PROGRAMMABLE CONTROLLERS

AC/DC-INPUT MODULE

PC CARD MODEM(PCMCIA)

TLP281 and TLP281-4 is a very small and thin coupler, suitable

for surface mount assembly in applications such as PCMCIA Fax

modem, programmable controllers.

TLP281 and TLP281-4 consist of photo transistor, optically coupled

to an infrared emitting diode.

 Collector-Emitter Voltage : 80 V (min)

 Current Transfer Ratio : 50% (min)

Rank GB : 100% (min)

 Isolation Voltage : 2500 Vrms (min)

 UL-recognized : UL 1577, File No.E67349

 cUL-recognized : CSA Component Acceptance Service No.5A

File No.E67349

 VDE-approved : EN 60747-5-5 (Note 1)

Note 1: When a VDE approved type is needed,

please designate the Option(V4).

Pin Configuration (top view)

1:ANODE

2:CATHODE

3:EMITTER

4:COLLECTOR

1,3,5,7 :ANODE

2,4,6,8 :CATHODE

9,11,13,15 :EMITTER

10,12,14,16 :COLLECTOR

TLP281

TLP281-4

TOSHIBA

11-3A1

Weight: 0.05 g (typ.)

TOSHIBA

11-10F1

Weight: 0.19 g (typ.)

Unit: mm

Start of commercial production

1996-03

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Current Transfer Ratio

TYPE Classification

(Note 1)

Current Transfer Ration (%)

(IC/IF)

Marking of Classification

IF = 5 mA, VCE = 5 V, Ta = 25°C

Min

Max

TLP281

Blank 50 600 Blank, Y■, YE, G, G■, GR, B, BL, GB

Rank Y 50 150 YE, Y

■

Rank GR 100 300 GR, G, G

■

Rank BL 200 600 BL, B

Rank GB 100 600 GB, GR, G, G

■

, BL, B

Rank YH 75 150 Y

■

Rank GRL 100 200 G

Rank GRH 150 300 G

Rank BLL 200 400 B

TLP281-4

Blank 50 600 Blank, GB

Rank GB 100 600 GB

Note 1: Ex. rank GB: TLP281 (GB)

Note: Application type name for certification test, please use standard product type name, i.e.

TLP281 (GB): TLP281, TLP281-4 (GB): TLP281-4

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Absolute Maximum Ratings (Ta = 25°C)

CHARACTERISTIC SYMBOL

RATING

UNIT

TLP281

TLP281-4

LED

Forward Current IF 50 mA

Forward Current Derating ∆IF/°C -0.7 (Ta≥53°C) -0.5 (Ta≥25°C) mA/°C

Pulse Forward Current

(100 μs pulse, 100 pps) IFP 1 A

Reverse Voltage VR 5 V

Diode power dissipation

PD 100 70 mW

Diode power dissipation derating

∆

PD/°C -1.39 (Ta≥53°C) -0.7

(Ta≥25°C) mW/°C

Junction Temperature Tj 125 °C

DETECTOR

Collector-Emitter Voltage VCEO 80 V

Emitter-Collector Voltage VECO 7 V

Collector Current IC 50 mA

Collector Power Dissipation

(1 Circuit) PC 150 100 mW

Collector Power Dissipation

Derating(Ta≥25°C) (1 Circuit) ∆PC/°C -1.5 -1.0 mW/°C

Junction Temperature Tj 125 °C

Operating Temperature Range Topr -55 to 100 °C

Storage Temperature Range Tstg -55 to 125 °C

Lead Soldering Temperature (10 s) Tsol 260 °C

Total Package Power Dissipation

(1 Circuit)

PT 200 170 mW

Total Package Power Dissipation

Derating (Ta≥25°C) (1 Circuit) ∆PT/°C -2.0 -1.7 mW/°C

Isolation Voltage

(AC, 60 s, R.H.≤ 60 %) (Note 1) BVS 2500 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted

together.

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Electrical Characteristics (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

LED

Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V

Reverse Current IR VR = 5 V — — 10 μA

Capacitance CT V = 0 V, f = 1 MHz — 30 — pF

DETECTOR

Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA 80 — — V

Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA 7 — — V

Collector Dark Current

(Note 1) ICEO

VCE = 48 V — 0.01 0.1

μA

Ambient Light Below (100 ℓx)

(Note 2)

— 2 10

VCE = 48 V, Ta = 85 °C — 2 50

μA

Ambient Light Below (100 ℓx)

(Note 2)

— 4 50

Capacitance (Collector to Emitter) CCE V = 0 V, f = 1 MHz — 10 — pF

Note 1: Because of the construction,leak current might be increased by ambient light.

Please use photocoupler with less ambient light.

Note 2: Irradiation to marking side using standard light bulb.

Coupled Electrical Characteristics (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Current Transfer Ratio IC/IF

IF = 5 mA, VCE = 5 V

Rank GB

50 — 600

100 — 600

Saturated CTR IC/IF(sat)

IF = 1 mA, VCE = 0.4 V

Rank GB

— 60 — %

30 — —

Collector-Emitter

Saturation Voltage VCE(sat)

IC = 2.4 mA, IF = 8 mA — — 0.4

IC = 0.2 mA, IF = 1 mA

Rank GB

— 0.2 —

— — 0.4

Off-State Collector Current IC(off) VF = 0.7 V, VCE = 48 V — — 10 μA

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Isolation Characteristics (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Capacitance

(Input to Output)

CS VS = 0 V, f = 1 MHz — 0.8 — pF

Isolation Resistance RS VS = 500 V, R.H. ≤ 60 % 5×1010 1014 — Ω

Isolation Voltage BVS AC, 60 s 2500 — — Vrms

Switching Characteristics (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Rise Time tr

VCC = 10 V, IC = 2 mA

RL = 100 Ω

— 2 —

μs

Fall Time tf — 3 —

Turn-On Time ton — 3 —

Turn-Off Time toff — 3 —

Turn-On Time tON

RL = 1.9 kΩ (Fig.1)

VCC = 5 V, IF = 16 mA

—

2 —

μs Storage Time ts — 25 —

Turn-Off Time tOFF — 40 —

Fig.1: SWITCHING TIME TEST CIRCUIT

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TLP281

TLP281-4

TLP281

TLP281-4

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

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Forward current IF (mA)

IC / IF – IF

Current transfer ratio

IC / IF (%)

= 10V

VCE = 5V

= 0.4V

Sample B

Sample A

1000

100

0.1

100

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

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NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

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Toshiba Electronic Devices & Storage Corporation

RESTRICTIONS ON PRODUCT USE

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

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