Agilent ATF-54143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Description
Agilent Technologies’s ATF-54143
is a high dynamic range, low
noise, E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface
mount plastic package.
The combination of high gain,
high linearity and low noise
makes the ATF-54143 ideal for
cellular/PCS base stations,
MMDS, and other systems in the
450 MHz to 6 GHz frequency
range.
Features
• High linearity performance
• Enhancement Mode Technology[1]
• Low noise figure
• Excellent uniformity in product
specifications
• 800 micron gate width
• Low cost surface mount small
plastic package SOT-343 (4 lead
SC-70)
• Tape-and-Reel packaging option
available
Specifications
2 GHz; 3 V, 60 mA (Typ.)
• 36.2 dBm output 3rd order intercept
• 20.4 dBm output power at 1 dB
gain compression
• 0.5 dB noise figure
• 16.6 dB associated gain
Applications
• Low noise amplifier for cellular/
PCS base stations
• LNA for WLAN, WLL/RLL and
MMDS applications
• General purpose discrete E-PHEMT
for other ultra low noise applications
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
SOURCE
DRAIN
GATE
SOURCE
4Fx
Note:
Top View. Package marking provides orientation
and identification
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
2
ATF-54143 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VDS Drain - Source Voltage[2] V5
VGS Gate - Source Voltage[2] V -5 to 1
VGD Gate Drain Voltage[2] V5
IDS Drain Current [2] mA 120
Pdiss Total Power Dissipation [3] mW 360
Pin max. RF Input Power dBm 10[5]
IGS Gate Source Current mA 2[5]
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
θjc Thermal Resistance[4] °C/W 162
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 92°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. The device can handle +10 dBm RF Input
Power provided IGS is limited to 2 mA. IGS at
P1dB drive level is bias circuit dependent. See
application section for additional information.
Product Consistency Distribution Charts [6, 7]
VDS (V)
Figure 1. Typical I-V Curves.
(V
GS
= 0.1 V per step)
IDS (mA)
0.4V
0.5V
0.6V
0.7V
0.3V
02146537
120
100
80
60
40
20
0
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
30 3432 38 4036 42
160
120
80
40
0
Cpk = 0.77
Stdev = 1.41
-3 Std
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
14 1615 1817 19
200
160
120
80
40
0
Cpk = 1.35
Stdev = 0.4
-3 Std +3 Std
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
0.25 0.650.45 0.85 1.05
160
120
80
40
0
Cpk = 1.67
Stdev = 0.073
+3 Std
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circut losses have been de-embeaded from actual measurements.
3
ATF-54143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition Units Min. Typ.[2] Max.
Vgs Operational Gate Voltage Vds = 3V, Ids = 60 mA V 0.4 0.59 0.75
Vth Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52
Idss Saturated Drain Current Vds = 3V, Vgs = 0V µA—15
Gm Transconductance Vds = 3V, gm = ∆Idss/∆Vgs; mmho 230 410 560
∆Vgs = 0.75 - 0.7 = 0.05V
Igss Gate Leakage Current Vgd = Vgs = -3V µA——200
NF Noise Figure [1] f = 2 GHz Vds = 3V, Ids = 60 mA dB —0.5 0.9
f = 900 MHz Vds = 3V, Ids = 60 mA dB —0.3 —
Ga Associated Gain [1] f = 2 GHz Vds = 3V, Ids = 60 mA dB 15 16.6 18.5
f = 900 MHz Vds = 3V, Ids = 60 mA dB —23.4 —
OIP3 Output 3rd Order f = 2 GHz Vds = 3V, Ids = 60 mA dBm 33 36.2 —
Intercept Point[1] f = 900 MHz Vds = 3V, Ids = 60 mA dBm —35.5 —
P1dB 1dB Compressed f = 2 GHz Vds = 3V, Ids = 60 mA dBm —20.4 —
Output Power[1] f = 900 MHz Vds = 3V, Ids = 60 mA dBm —18.4 —
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit repre-
sents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from
actual measurements.
4
ATF-54143 Typical Performance Curves
Figure 8. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 10. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 12. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 9. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
3V
4V
I
ds
(mA)
GAIN (dB)
0 1004020 8060
19
18
17
16
15
14
13
12
3V
4V
I
ds
(mA)
OIP3 (dBm)
0 1004020 8060
42
37
32
27
22
17
12
3V
4V
I
dq
(mA)
[1]
P1dB (dBm)
0 1004020 8060
24
22
20
18
16
14
12
3V
4V
I
ds
(mA)
GAIN (dB)
0 1004020 8060
25
24
23
22
21
20
19
18
Figure 11. OIP3 vs. I
ds and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
3V
4V
I
ds
(mA)
OIP3 (dBm)
0 1004020 8060
40
35
30
25
20
15
Figure 13. P1dB vs. I
dq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
3V
4V
I
dq
(mA)
[1]
P1dB (dBm)
0 1004020 8060
23
22
21
20
19
18
17
16
15
25°C
-40°C
85°C
FREQUENCY (GHz)
GAIN (dB)
0621453
35
30
25
20
15
10
5
Figure 7. Fmin vs. I
ds and Vds Tuned for
Max OIP3 and Min NF at 900 MHz.
3V
4V
I
d
(mA)
Fmin (dB)
0 1004020 8060
0.6
0.5
0.4
0.3
0.2
0.1
0
Figure 6. Fmin vs. I
ds and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
3V
4V
I
d
(mA)
Fmin (dB)
0 1004020 8060
0.7
0.6
0.5
0.4
0.3
0.2
Notes:
1. Idq represents the quiescent drain current
without RF drive applied. Under low values of
Ids, the application of RF drive will cause Id to
increase substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
5
ATF-54143 Typical Performance Curves, continued
Note:
1. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3,
VDS = 3V, IDS = 60 mA
Freq ΓOut_Mag.[1] ΓOut_Ang.[1] OIP3 P1dB
(GHz) (Mag) (Degrees) (dBm) (dBm)
0.9 0.017 115 35.54 18.4
2.0 0.026 -85 36.23 20.38
3.9 0.013 173 37.54 20.28
5.8 0.025 102 35.75 18.09
Note:
1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
Figure 17. P1dB vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
25°C
-40°C
85°C
FREQUENCY (GHz)
P1dB (dBm)
0621453
21
20.5
20
19.5
19
18.5
18
17.5
17
Figure 18. Fmin
[1]
vs. Frequency and I
ds
at 3V.
FREQUENCY (GHz)
Fmin (dB)
02145637
60 mA
40 mA
80 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 15. Fmin[2] vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
25°C
-40°C
85°C
FREQUENCY (GHz)
Fmin (dB)
0621453
2
1.5
1.0
0.5
0
Figure 16. OIP3 vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
25°C
-40°C
85°C
FREQUENCY (GHz)
OIP3 (dBm)
0621453
45
40
35
30
25
20
15
10
6
ATF-54143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.99 -17.6 27.99 25.09 168.5 0.009 80.2 0.59 -12.8 34.45
0.5 0.83 -76.9 25.47 18.77 130.1 0.036 52.4 0.44 -54.6 27.17
0.9 0.72 -114 22.52 13.37 108 0.047 40.4 0.33 -78.7 24.54
1.0 0.70 -120.6 21.86 12.39 103.9 0.049 38.7 0.31 -83.2 24.03
1.5 0.65 -146.5 19.09 9.01 87.4 0.057 33.3 0.24 -99.5 21.99
1.9 0.63 -162.1 17.38 7.40 76.6 0.063 30.4 0.20 -108.6 20.70
2.0 0.62 -165.6 17.00 7.08 74.2 0.065 29.8 0.19 -110.9 20.37
2.5 0.61 178.5 15.33 5.84 62.6 0.072 26.6 0.15 -122.6 19.09
3.0 0.61 164.2 13.91 4.96 51.5 0.080 22.9 0.12 -137.5 17.92
4.0 0.63 138.4 11.59 3.80 31 0.094 14 0.10 176.5 16.06
5.0 0.66 116.5 9.65 3.04 11.6 0.106 4.2 0.14 138.4 14.57
6.0 0.69 97.9 8.01 2.51 -6.7 0.118 -6.1 0.17 117.6 13.28
7.0 0.71 80.8 6.64 2.15 -24.5 0.128 -17.6 0.20 98.6 12.25
8.0 0.72 62.6 5.38 1.86 -42.5 0.134 -29.3 0.22 73.4 11.42
9.0 0.76 45.2 4.20 1.62 -60.8 0.145 -40.6 0.27 52.8 10.48
10.0 0.83 28.2 2.84 1.39 -79.8 0.150 -56.1 0.37 38.3 9.66
11.0 0.85 13.9 1.42 1.18 -96.9 0.149 -69.3 0.45 25.8 8.98
12.0 0.88 -0.5 0.23 1.03 -112.4 0.150 -81.6 0.51 12.7 8.35
13.0 0.89 -15.1 -0.86 0.91 -129.7 0.149 -95.7 0.54 -4.1 7.84
14.0 0.87 -31.6 -2.18 0.78 -148 0.143 -110.3 0.61 -20.1 7.36
15.0 0.88 -46.1 -3.85 0.64 -164.8 0.132 -124 0.65 -34.9 6.87
16.0 0.87 -54.8 -5.61 0.52 -178.4 0.121 -134.6 0.70 -45.6 6.37
17.0 0.87 -62.8 -7.09 0.44 170.1 0.116 -144.1 0.73 -55.9 5.81
18.0 0.92 -73.6 -8.34 0.38 156.1 0.109 -157.4 0.76 -68.7 5.46
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.17 0.34 34.80 0.04 27.83
0.9 0.22 0.32 53.00 0.04 23.57
1.0 0.24 0.32 60.50 0.04 22.93
1.9 0.42 0.29 108.10 0.04 18.35
2.0 0.45 0.29 111.10 0.04 17.91
2.4 0.51 0.30 136.00 0.04 16.39
3.0 0.59 0.32 169.90 0.05 15.40
3.9 0.69 0.34 -151.60 0.05 13.26
5.0 0.90 0.45 -119.50 0.09 11.89
5.8 1.14 0.50 -101.60 0.16 10.95
6.0 1.17 0.52 -99.60 0.18 10.64
7.0 1.24 0.58 -79.50 0.33 9.61
8.0 1.57 0.60 -57.90 0.56 8.36
9.0 1.64 0.69 -39.70 0.87 7.77
10.0 1.8 0.80 -22.20 1.34 7.68
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 3 V, IDS = 40 mA
Figure 19. MSG/MAG and |S
21
|
2
vs.
Frequency at 3V, 40 mA.
MSG
S21
FREQUENCY (GHz)
MSG/MAG and S
21
(dB)
02010515
40
35
30
25
20
15
10
5
0
-5
10
-15
7
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.99 -18.9 28.84 27.66 167.6 0.01 80.0 0.54 -14.0 34.88
0.5 0.81 -80.8 26.04 20.05 128.0 0.03 52.4 0.40 -58.8 27.84
0.9 0.71 -117.9 22.93 14.01 106.2 0.04 41.8 0.29 -83.8 25.13
1.0 0.69 -124.4 22.24 12.94 102.2 0.05 40.4 0.27 -88.5 24.59
1.5 0.64 -149.8 19.40 9.34 86.1 0.05 36.1 0.21 -105.2 22.46
1.9 0.62 -164.9 17.66 7.64 75.6 0.06 33.8 0.17 -114.7 21.05
2.0 0.62 -168.3 17.28 7.31 73.3 0.06 33.3 0.17 -117.0 20.71
2.5 0.60 176.2 15.58 6.01 61.8 0.07 30.1 0.13 -129.7 19.34
3.0 0.60 162.3 14.15 5.10 51.0 0.08 26.5 0.11 -146.5 18.15
4.0 0.62 137.1 11.81 3.90 30.8 0.09 17.1 0.10 165.2 16.17
5.0 0.66 115.5 9.87 3.11 11.7 0.11 6.8 0.14 131.5 14.64
6.0 0.69 97.2 8.22 2.58 -6.4 0.12 -3.9 0.18 112.4 13.36
7.0 0.70 80.2 6.85 2.20 -24.0 0.13 -15.8 0.20 94.3 12.29
8.0 0.72 62.2 5.58 1.90 -41.8 0.14 -28.0 0.23 70.1 11.45
9.0 0.76 45.0 4.40 1.66 -59.9 0.15 -39.6 0.29 50.6 10.53
10.0 0.83 28.4 3.06 1.42 -78.7 0.15 -55.1 0.38 36.8 9.71
11.0 0.85 13.9 1.60 1.20 -95.8 0.15 -68.6 0.46 24.4 9.04
12.0 0.88 -0.2 0.43 1.05 -111.1 0.15 -80.9 0.51 11.3 8.43
13.0 0.89 -14.6 -0.65 0.93 -128.0 0.15 -94.9 0.55 -5.2 7.94
14.0 0.88 -30.6 -1.98 0.80 -146.1 0.14 -109.3 0.61 -20.8 7.43
15.0 0.88 -45.0 -3.62 0.66 -162.7 0.13 -122.9 0.66 -35.0 6.98
16.0 0.88 -54.5 -5.37 0.54 -176.6 0.12 -133.7 0.70 -45.8 6.49
17.0 0.88 -62.5 -6.83 0.46 171.9 0.12 -143.2 0.73 -56.1 5.95
18.0 0.92 -73.4 -8.01 0.40 157.9 0.11 -156.3 0.76 -68.4 5.66
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.15 0.34 42.3 0.04 28.50
0.9 0.20 0.32 62.8 0.04 24.18
1.0 0.22 0.32 67.6 0.04 23.47
1.9 0.42 0.27 116.3 0.04 18.67
2.0 0.45 0.27 120.1 0.04 18.29
2.4 0.52 0.26 145.8 0.04 16.65
3.0 0.59 0.29 178.0 0.05 15.56
3.9 0.70 0.36 -145.4 0.05 13.53
5.0 0.93 0.47 -116.0 0.10 12.13
5.8 1.16 0.52 -98.9 0.18 11.10
6.0 1.19 0.55 -96.5 0.20 10.95
7.0 1.26 0.60 -77.1 0.37 9.73
8.0 1.63 0.62 -56.1 0.62 8.56
9.0 1.69 0.70 -38.5 0.95 7.97
10.0 1.73 0.79 -21.5 1.45 7.76
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 3V, IDS = 60 mA
Figure 20. MSG/MAG and |S21|2 vs.
Frequency at 3V, 60 mA.
MSG
S
21
FREQUENCY (GHz)
MSG/MAG and S
21
(dB)
02010515
40
35
30
25
20
15
10
5
0
-5
10
-15
8
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 80 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.98 -20.4 28.32 26.05 167.1 0.01 79.4 0.26 -27.6 34.16
0.5 0.80 -85.9 25.32 18.45 126.8 0.04 53.3 0.29 -104.9 27.10
0.9 0.72 -123.4 22.10 12.73 105.2 0.05 43.9 0.30 -138.8 24.15
1.0 0.70 -129.9 21.40 11.75 101.3 0.05 42.7 0.30 -144.3 23.63
1.5 0.66 -154.6 18.55 8.46 85.4 0.06 38.6 0.30 -165.0 21.35
1.9 0.65 -169.5 16.81 6.92 74.9 0.07 35.7 0.29 -177.6 19.89
2.0 0.64 -172.8 16.42 6.62 72.6 0.07 35.0 0.29 179.4 19.52
2.5 0.64 172.1 14.69 5.42 61.1 0.09 30.6 0.29 164.4 18.05
3.0 0.63 158.5 13.24 4.59 50.1 0.10 25.5 0.29 150.2 16.80
4.0 0.66 133.8 10.81 3.47 29.9 0.12 13.4 0.33 126.1 14.76
5.0 0.69 112.5 8.74 2.74 11.1 0.13 1.2 0.39 107.8 13.20
6.0 0.72 94.3 7.03 2.25 -6.5 0.14 -11.3 0.42 91.8 11.96
7.0 0.73 77.4 5.63 1.91 -23.5 0.15 -24.5 0.44 75.5 10.97
8.0 0.74 59.4 4.26 1.63 -41.1 0.16 -38.1 0.47 55.5 10.14
9.0 0.78 42.1 2.98 1.41 -58.7 0.17 -51.1 0.52 37.8 9.32
10.0 0.84 25.6 1.51 1.19 -76.4 0.16 -66.8 0.59 24.0 8.60
11.0 0.86 11.4 0.00 1.00 -92.0 0.16 -79.8 0.64 11.8 8.04
12.0 0.88 -2.6 -1.15 0.88 -105.9 0.16 -91.7 0.68 -0.8 7.52
13.0 0.89 -17.0 -2.18 0.78 -121.7 0.15 -105.6 0.70 -16.7 7.12
14.0 0.87 -33.3 -3.48 0.67 -138.7 0.14 -119.5 0.73 -31.7 6.77
15.0 0.87 -47.3 -5.02 0.56 -153.9 0.13 -132.3 0.76 -44.9 6.42
16.0 0.86 -55.6 -6.65 0.47 -165.9 0.12 -141.7 0.78 -54.9 5.99
17.0 0.86 -63.4 -7.92 0.40 -175.9 0.11 -150.4 0.79 -64.2 5.55
18.0 0.91 -74.2 -8.92 0.36 171.2 0.10 -163.0 0.81 -76.2 5.37
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.19 0.23 66.9 0.04 27.93
0.9 0.24 0.24 84.3 0.04 24.13
1.0 0.25 0.25 87.3 0.04 23.30
1.9 0.43 0.28 134.8 0.04 18.55
2.0 0.42 0.29 138.8 0.04 18.15
2.4 0.51 0.30 159.5 0.03 16.44
3.0 0.61 0.35 -173 0.03 15.13
3.9 0.70 0.41 -141.6 0.06 12.97
5.0 0.94 0.52 -113.5 0.13 11.42
5.8 1.20 0.56 -97.1 0.23 10.48
6.0 1.26 0.58 -94.8 0.26 10.11
7.0 1.34 0.62 -75.8 0.46 8.86
8.0 1.74 0.63 -55.5 0.76 7.59
9.0 1.82 0.71 -37.7 1.17 6.97
10.0 1.94 0.79 -20.8 1.74 6.65
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 3V, IDS = 80 mA
Figure 21. MSG/MAG and |S21|2 vs.
Frequency at 3V, 80 mA.
MSG
S
21
FREQUENCY (GHz)
MSG/MAG and S
21
(dB)
02010515
40
35
30
25
20
15
10
5
0
-5
10
-15
9
ATF-54143 Typical Scattering Parameters, VDS = 4V, IDS = 60 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.99 -18.6 28.88 27.80 167.8 0.01 80.1 0.58 -12.6 35.41
0.5 0.81 -80.2 26.11 20.22 128.3 0.03 52.4 0.42 -52.3 28.14
0.9 0.71 -117.3 23.01 14.15 106.4 0.04 41.7 0.31 -73.3 25.38
1.0 0.69 -123.8 22.33 13.07 102.4 0.04 40.2 0.29 -76.9 24.83
1.5 0.64 -149.2 19.49 9.43 86.2 0.05 36.1 0.22 -89.4 22.75
1.9 0.62 -164.5 17.75 7.72 75.7 0.06 34.0 0.18 -95.5 21.32
2.0 0.61 -167.8 17.36 7.38 73.3 0.06 33.5 0.18 -97.0 21.04
2.5 0.60 176.6 15.66 6.07 61.9 0.07 30.7 0.14 -104.0 19.64
3.0 0.60 162.6 14.23 5.15 51.1 0.07 27.3 0.11 -113.4 18.48
4.0 0.62 137.4 11.91 3.94 30.9 0.09 18.7 0.07 -154.7 16.46
5.0 0.65 115.9 10.00 3.16 11.7 0.10 9.0 0.09 152.5 14.96
6.0 0.68 97.6 8.36 2.62 -6.6 0.11 -1.4 0.12 127.9 13.61
7.0 0.70 80.6 7.01 2.24 -24.3 0.12 -12.9 0.15 106.9 12.57
8.0 0.72 62.6 5.76 1.94 -42.3 0.13 -24.7 0.17 78.9 11.67
9.0 0.76 45.4 4.60 1.70 -60.5 0.14 -36.1 0.23 56.8 10.72
10.0 0.83 28.5 3.28 1.46 -79.6 0.15 -51.8 0.32 42.1 9.88
11.0 0.86 14.1 1.87 1.24 -97.0 0.15 -65.4 0.41 29.4 9.17
12.0 0.88 -0.4 0.69 1.08 -112.8 0.15 -78.0 0.47 16.0 8.53
13.0 0.90 -14.9 -0.39 0.96 -130.2 0.15 -92.2 0.51 -1.1 7.99
14.0 0.87 -31.4 -1.72 0.82 -148.8 0.15 -107.3 0.58 -17.6 7.46
15.0 0.88 -46.0 -3.38 0.68 -166.0 0.14 -121.2 0.63 -32.6 6.97
16.0 0.88 -54.8 -5.17 0.55 179.8 0.13 -132.2 0.69 -43.7 6.41
17.0 0.87 -62.8 -6.73 0.46 168.4 0.12 -142.3 0.72 -54.2 5.85
18.0 0.92 -73.7 -7.93 0.40 154.3 0.11 -155.6 0.75 -67.2 5.54
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.17 0.33 34.30 0.03 28.02
0.9 0.25 0.31 60.30 0.04 24.12
1.0 0.27 0.31 68.10 0.04 23.43
1.9 0.45 0.27 115.00 0.04 18.72
2.0 0.49 0.27 119.80 0.04 18.35
2.4 0.56 0.26 143.50 0.04 16.71
3.0 0.63 0.28 176.80 0.04 15.58
3.9 0.73 0.35 -145.90 0.05 13.62
5.0 0.96 0.47 -116.20 0.11 12.25
5.8 1.20 0.52 -98.80 0.19 11.23
6.0 1.23 0.54 -96.90 0.21 11.02
7.0 1.33 0.60 -77.40 0.38 9.94
8.0 1.66 0.63 -56.20 0.64 8.81
9.0 1.71 0.71 -38.60 0.99 8.22
10.0 1.85 0.82 -21.30 1.51 8.12
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 4V, IDS = 60 mA
Figure 22. MSG/MAG and |S
21
|
2
vs.
Frequency at 4V, 60 mA.
MSG
S
21
FREQUENCY (GHz)
MSG/MAG and S
21
(dB)
02010515
40
35
30
25
20
15
10
5
0
-5
10
-15
10
ATF-54143 Applications
Information
Introduction
Agilent Technologies’s ATF-54143
is a low noise enhancement mode
PHEMT designed for use in low
cost commercial applications in
the VHF through 6 GHz frequency
range. As opposed to a typical
depletion mode PHEMT where the
gate must be made negative with
respect to the source for proper
operation, an enhancement mode
PHEMT requires that the gate be
made more positive than the
source for normal operation.
Therefore a negative power
supply voltage is not required for
an enhancement mode device.
Biasing an enhancement mode
PHEMT is much like biasing the
typical bipolar junction transistor.
Instead of a 0.7 V base to emitter
voltage, the ATF-54143 enhance-
ment mode PHEMT requires
about a 0.6V potential between
the gate and source for a nominal
drain current of 60 mA.
Matching Networks
The techniques for impedance
matching an enhancement mode
device are very similar to those
for matching a depletion mode
device. The only difference is in
the method of supplying gate
bias. S and Noise Parameters for
various bias conditions are listed
in this data sheet. The circuit
shown in Figure 1 shows a typical
LNA circuit normally used for
900 and 1900 MHz applications
(Consult the Agilent Technologies
website for application notes
covering specific applications).
High pass impedance matching
networks consisting of L1/C1 and
L4/C4 provide the appropriate
match for noise figure, gain, S11
and S22. The high pass structure
also provides low frequency gain
reduction which can be beneficial
from the standpoint of improving
out-of-band rejection at lower
frequencies.
INPUT C1
C2
C3
L1
R4
R1 R2
Vdd
R3
L2 L3
L4
Q1
Zo Zo
C4
C5
C6
OUTPUT
R5
Figure 1. Typical ATF-54143 LNA with Passive
Biasing.
Capacitors C2 and C5 provide a
low impedance in-band RF
bypass for the matching net-
works. Resistors R3 and R4
provide a very important low
frequency termination for the
device. The resistive termination
improves low frequency stability.
Capacitors C3 and C6 provide
the low frequency RF bypass for
resistors R3 and R4. Their value
should be chosen carefully as C3
and C6 also provide a termina-
tion for low frequency mixing
products. These mixing products
are as a result of two or more in-
band signals mixing and produc-
ing third order in-band distortion
products. The low frequency or
difference mixing products are
bypassed by C3 and C6. For best
suppression of third order
distortion products based on the
CDMA 1.25 MHz signal spacing,
C3 and C6 should be 0.1 µF in
value. Smaller values of capaci-
tance will not suppress the
generation of the 1.25 MHz
difference signal and as a result
will show up as poorer two tone
IP3 results.
Bias Networks
One of the major advantages of
the enhancement mode technol-
ogy is that it allows the designer
to be able to dc ground the
source leads and then merely
apply a positive voltage on the
gate to set the desired amount of
quiescent drain current Id.
Whereas a depletion mode
PHEMT pulls maximum drain
current when Vgs = 0V, an en-
hancement mode PHEMT pulls
only a small amount of leakage
current when Vgs = 0V. Only when
Vgs is increased above Vto, the
device threshold voltage, will
drain current start to flow. At a
Vds of 3V and a nominal Vgs of
0.6V, the drain current Id will be
approximately 60 mA. The data
sheet suggests a minimum and
maximum Vgs over which the
desired amount of drain current
will be achieved. It is also impor-
tant to note that if the gate
terminal is left open circuited,
the device will pull some amount
of drain current due to leakage
current creating a voltage differ-
ential between the gate and
source terminals.
Passive Biasing
Passive biasing of the ATF-54143
is accomplished by the use of a
voltage divider consisting of R1
and R2. The voltage for the
divider is derived from the drain
voltage which provides a form of
voltage feedback through the use
of R3 to help keep drain current
constant. Resistor R5 (approxi-
mately 10kΩ) provides current
limiting for the gate of enhance-
ment mode devices such as the
ATF-54143. This is especially
important when the device is
driven to P1dB or PSAT.
Resistor R3 is calculated based
on desired Vds, Ids and available
power supply voltage.
R3 = VDD – Vds (1)
p
Ids + IBB
VDD is the power supply voltage.
Vds is the device drain to source
voltage.
Ids is the desired drain current.
IBB is the current flowing through
the R1/R2 resistor voltage
divider network.
11
The values of resistors R1 and R2
are calculated with the following
formulas
R1 = Vgs (2)
p
IBB
R2 = (Vds – Vgs) R1 (3)
p
Vgs
Example Circuit
VDD = 5 V
Vds = 3V
Ids = 60 mA
Vgs = 0.59V
Choose IBB to be at least 10X the
normal expected gate leakage
current. IBB was chosen to be
2 mA for this example. Using
equations (1), (2), and (3) the
resistors are calculated as
follows
R1 = 295Ω
R2 = 1205Ω
R3 = 32.3Ω
Active Biasing
Active biasing provides a means
of keeping the quiescent bias
point constant over temperature
and constant over lot to lot
variations in device dc perfor-
mance. The advantage of the
active biasing of an enhancement
mode PHEMT versus a depletion
mode PHEMT is that a negative
power source is not required. The
techniques of active biasing an
enhancement mode device are
very similar to those used to bias
a bipolar junction transistor.
INPUT C1
C2
C3
C7
L1
R5
R6
R7 R3
R2
R1
Q2 Vdd
R4
L2 L3
L4
Q1
Zo Zo
C4
C5
C6
OUTPUT
Figure 2. Typical ATF-54143 LNA with
Active Biasing.
An active bias scheme is shown
in Figure 2. R1 and R2 provide a
constant voltage source at the
base of a PNP transistor at Q2.
The constant voltage at the base
of Q2 is raised by 0.7 volts at the
emitter. The constant emitter
voltage plus the regulated VDD
supply are present across resis-
tor R3. Constant voltage across
R3 provides a constant current
supply for the drain current.
Resistors R1 and R2 are used to
set the desired Vds. The com-
bined series value of these
resistors also sets the amount of
extra current consumed by the
bias network. The equations that
describe the circuit’s operation
are as follows.
VE = Vds + (Ids • R4) (1)
R3 = VDD – VE (2)
p
Ids
VB = VE – VBE (3)
VB = R1 VDD (4)
p
R1 + R2
VDD = IBB (R1 + R2) (5)
Rearranging equation (4)
provides the following formula
R2 = R1 (VDD – VB) (4A)
p
VB
and rearranging equation (5)
provides the following formula
R1 = VDD (5A)
9
IBB
(1 + VDD – VB )
p
VB
Example Circuit
VDD = 5V
Vds = 3V
Ids = 60 mA
R4 = 10Ω
VBE = 0.7 V
Equation (1) calculates the
required voltage at the emitter of
the PNP transistor based on
desired Vds and Ids through
resistor R4 to be 3.6V. Equation
(2) calculates the value of resis-
tor R3 which determines the
drain current Ids. In the example
R3 = 23.3Ω. Equation (3) calcu-
lates the voltage required at the
junction of resistors R1 and R2.
This voltage plus the step-up of
the base emitter junction deter-
mines the regulated Vds. Equa-
tions (4) and (5) are solved
simultaneously to determine the
value of resistors R1 and R2. In
the example R1= 1450Ω and
R2=1050Ω. R7 is chosen to be
1kΩ. This resistor keeps a small
amount of current flowing
through Q2 to help maintain bias
stability. R6 is chosen to be
10kΩ. This value of resistance is
necessary to limit Q1 gate
current in the presence of high
RF drive level (especially when
Q1 is driven to P1dB gain com-
pression point).
12
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0.13 pF
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3
L
L6
L=0.175 nH
R=0.001
C
C2
C=0.159 pF
L
L7
L=0.746 nH
R=0.001
MSub
TLINP
TL4
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL10
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL3
Z=Z2 Ohm
L=25 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL9
Z=Z2 Ohm
L=10.0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z2=85
Z1=30
Var
Egn TLINP
TL1
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL8
Z=Z1 Ohm
L=15.0 mil
K=1
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2/2 Ohm
L=5.0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=26.0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL6
Z=Z1 Ohm
L=15.0 mil
K=1
A=0.0000
F=1 GHz
TanD=0.001
L
L1
L=0.477 nH
R=0.001
L
L4
L=0.4 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
NFET=yes
PFET=no
Vto=0.3
Beta=0.9
Lambda=82e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.25 Ohm
Rf=
Gscap=2
Cgs=1.73 pF
Cgd=0.255 pF
Gdcap=2
Fc=0.65
Rgd=0.25 Ohm
Rd=1.0125 Ohm
Rg=1.0 Ohm
Rs=0.3375 Ohm
Ld=
Lg=0.18 nH
Ls=
Cds=0.27 pF
Rc=250 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.8
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Advanced_Curtice2_Model
MESFETM1
ATF-54143 Die Model
ATF-54143 curtice ADS Model
13
Figure 3. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters.
Designing with S and Noise
Parameters and the Non-Linear Model
The non-linear model describing
the ATF-54143 includes both the
die and associated package
model. The package model
includes the effect of the pins but
does not include the effect of the
additional source inductance
associated with grounding the
source leads through the printed
circuit board. The device S and
Noise Parameters do include the
effect of 0.020 inch thickness
printed circuit board vias. When
comparing simulation results
between the measured S param-
DRAIN
VIA2
V1
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V4
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
SOURCE
GATESOURCE
ATF-54143
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
MSub
VIA2
V3
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
eters and the simulated non-
linear model, be sure to include
the effect of the printed circuit
board to get an accurate compari-
son. This is shown schematically
in Figure 3.
For Further Information
The information presented here is
an introduction to the use of the
ATF-54143 enhancement mode
PHEMT. More detailed application
circuit information is available
from Agilent Technologies.
Consult the web page or your
local Agilent Technologies sales
representative.
14
Noise Parameter Applications
Information
Fmin values at 2 GHz and higher
are based on measurements
while the Fmins below 2 GHz have
been extrapolated. The Fmin
values are based on a set of
16 noise figure measurements
made at 16 different impedances
using an ATN NP5 test system.
From these measurements, a true
Fmin is calculated. Fmin repre-
sents the true minimum noise
figure of the device when the
device is presented with an
impedance matching network
that transforms the source
impedance, typically 50Ω, to an
impedance represented by the
reflection coefficient Go. The
designer must design a matching
network that will present Go to
the device with minimal associ-
ated circuit losses. The noise
figure of the completed amplifier
is equal to the noise figure of the
device plus the losses of the
matching network preceding the
device. The noise figure of the
device is equal to Fmin only when
the device is presented with Go.
If the reflection coefficient of the
matching network is other than
Go, then the noise figure of the
device will be greater than Fmin
based on the following equation.
NF = F
min
+ 4 R
n
|Γ
s
– Γ
o
| 2
Zo (|1 + Γ
o
|2)(1 - |Γ
s
|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
Typically for FETs, the higher Γo
usually infers that an impedance
much higher than 50Ω is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms. Match-
ing to such a high impedance
requires very hi-Q components in
order to minimize circuit losses.
As an example at 900 MHz, when
airwwound coils (Q> 100) are
used for matching networks, the
loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
15
E
D
A
A1
b TYP
e
E1
1.30 (0.051)
BSC
1.15 (.045) BSC
θ
h
C TYP
L
DIMENSIONS ARE IN MILLIMETERS (INCHES)
DIMENSIONS
MIN.
0.80 (0.031)
0 (0)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
0.450 TYP (0.018)
1.15 (0.045)
0.10 (0.004)
0
MAX.
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
1.35 (0.053)
0.35 (0.014)
10
SYMBOL
A
A1
b
C
D
E
e
h
E1
L
θ
1.15 (.045) REF
1.30 (.051) REF
1.30 (.051)2.60 (.102)
0.55 (.021) TYP 0.85 (.033)
Package Dimensions
Outline 43
SOT-343 (SC70 4-lead)
Ordering Information
Part Number No. of Devices Container
ATF-54143-TR1 3000 7” Reel
ATF-54143-TR2 10000 13”Reel
ATF-54143-BLK 100 antistatic bag
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
71 71 71 71
P
P
0
P
2
FW
C
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.4 ± 0.10
0.062 ± 0.001 0.205 ± 0.004
0.0025 ± 0.00004
COVER TAPE
Device Orientation
Tape Dimensions
For Outline 4T
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5988-0450EN
May 31, 2001
5988-2722EN
