ATP405
No. A1458-1/7
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPA
K
0.7
0.4
0.55
9.5
7.3 0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4 2.6
4.6
0.4
0.1
2.3 2.3
ATP405-TL-H
Features
• ON-resistance RDS(on)=25mΩ (typ.) • Input capacitance Ciss=4000pF (typ.)
• 10V drive • Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID40 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 160 A
Allowable Power Dissipation PDTc=25°C70W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 148 mJ
Avalanche Current *2 IAV 40 A
Note :
*1 VDD=30V, L=100μH, IAV=40A
*2 L≤100μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1458A
62712 TKIM/42209QA MSIM TC-00001943
ATP405
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : ATPAK
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
TL
ATP405
LOT No.
1
3
2,4
SANYO Semiconductors
DATA SHEET
ATP405
No. A1458-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 100 V
Zero-Gate Voltage Drain Current IDSS V
DS=100V, VGS=0V 10 μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.5 V
Forward Transfer Admittance | yfs |VDS=10V, ID=20A 62 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=20A, VGS=10V 25 33 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 4000 pF
Output Capacitance Coss 300 pF
Reverse Transfer Capacitance Crss 170 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
38 ns
Rise Time tr 125 ns
Turn-OFF Delay Time td(off) 220 ns
Fall Time tf150 ns
Total Gate Charge Qg VDS=60V, VGS=10V, ID=40A 68 nC
Gate-to-Source Charge Qgs 14 nC
Gate-to-Drain “Miller” Charge Qgd 15 nC
Diode Forward Voltage VSD IS=40A, VGS=0V 0.9
1.2
V
Switching Time Test Circuit Avalanche Resistance Test Circuit
Ordering Information
Device Package Shipping memo
ATP405-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=20A
RL=3Ω
VDD=60V
VOUT
ATP405
VIN
10V
0V
VIN
50Ω
10V
0V
≥50Ω
VDD
L
ATP405
ATP405
No. A1458-3/7
| yfs | -- ID
RDS(on) -- VGS RDS(on) -- Tc
ID -- VDS ID -- VGS(off)
IS -- VSD
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Cutoff Voltage, VGS(off) -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Forward T ransfer Admittance, | yfs | -- S
Ciss, Coss, Crss -- VDS
IT14607
IT14604
--50 --25 150
03010 15 20 255
1000
2
IT14611
IT14609
IT14608
0.1 1.0
23 57
100
1.21.00.60.4 0.80.20
0.001
0.01
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
2
0.1
1.0
10
100
7
3
10
1.0
7
5
5
2
3
7
5
2
2
10000
210
357 100
5723
0.1 1.0
23 57 2 10
357 7523
0 25 50 75 100 125
3
5
7
3
5
7
100
7
2
75°C
25°C
Tc= --25°C
--25°C
Tc=75°C
Tc= --25°C
25
°
C
75°C
VDS=10V
Tc=75°C
25°C
--25°C
Ciss
Crss
IT14610
10
100
2
3
5
7
1000
2
3
5
7
td(off)
VDD=60V
VGS=10V f=1MHz
tr
0.5 1.0 3.02.01.5 2.50
0
10
80
70
50
60
40
30
20
10
70
50
60
40
30
20
1.0 2.0 5.04.03.00.5 1.5 3.52.5 4.50
0
10
80
70
50
60
40
30
20
IT14606
2468103579
0
10
70
50
60
40
30
20
0
IT14605
Tc=25°C
VGS=4.0V
VDS=10V
tf
25
°
C
VGS=10V, ID=20A
8.0V
Coss
td(on)
4.5V
6.0V
10.0V
--25°C
25°C
Tc=75°C
Single pulse
ID=20A
Single pulse
VGS=0V
Single pulse
ATP405
No. A1458-4/7
A S O
VGS -- Qg
PD -- Tc
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
0
025 50 75 100 125 150
100
80
60
20
40
120
175
IT14603
0
IT14602
0
020 40 60
10
20
50
70
60
30
40
80 100 120
80
140 160
IT14613
IT14612
01020 5040 706030 80
0
2
4
6
1
3
5
8
7
9
10 VDS=60V
ID=40A
0.01
0.1
1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
5
7
2
3
10
0.01 0.1
IDP=160A
ID=40A
100μs
1ms
10ms
100ms
DC operation
Operation in
this area is
limited by RDS(on).
1.0 10 2235723 5723 5723 57 100
10
μ
s
100
PW≤10μs
Tc=25°C
Single pulse
ATP405
No. A1458-5/7
Taping Specifi cation
ATP405-TL-H
ATP405
No. A1458-6/7
Outline Drawing Land Pattern Example
ATP405-TL-H
Mass (g) Unit
0.266
* For reference
mm Unit: mm
6.5
6.71.6 2
2.3 2.3
1.5
ATP405
No. A1458-7/7 PS
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
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grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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